30 research outputs found
Frequency Scaling of Microwave Conductivity in the Integer Quantum Hall Effect Minima
We measure the longitudinal conductivity at frequencies GHz over a range of temperatures K with particular emphasis on the Quantum Hall plateaus. We find that
scales linearly with frequency for a range of magnetic field
around the center of the plateaus, i.e. where . The width of this scaling region decreases with higher
temperature and vanishes by 1.2 K altogether. Comparison between localization
length determined from and DC measurements on the same
wafer show good agreement.Comment: latex 4 pages, 4 figure
The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
We present low temperature electrical transport experiments in five field
effect transistor devices consisting of monolayer, bilayer and trilayer MoS2
films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal
that the electronic states in all films are localized well up to the room
temperature over the experimentally accessible range of gate voltage. This
manifests in two dimensional (2D) variable range hopping (VRH) at high
temperatures, while below \sim 30 K the conductivity displays oscillatory
structures in gate voltage arising from resonant tunneling at the localized
sites. From the correlation energy (T0) of VRH and gate voltage dependence of
conductivity, we suggest that Coulomb potential from trapped charges in the
substrate are the dominant source of disorder in MoS2 field effect devices,
which leads to carrier localization as well.Comment: 10 pages, 5 figures; ACS Nano (2011
Quantum corrections to conductivity: from weak to strong localization
Results of detailed investigations of the conductivity and Hall effect in
gated single quantum well GaAs/InGaAs/GaAs heterostructures with
two-dimensional electron gas are presented. A successive analysis of the data
has shown that the conductivity is diffusive for and behaves like
diffusive one for down to the temperature T=0.4 K. It has been
therewith found that the quantum corrections are not small at low temperature
when . They are close in magnitude to the Drude conductivity so
that the conductivity becomes significantly less than (the
minimal value achieved in our experiment is about at and K). We conclude that the
temperature and magnetic field dependences of conductivity in whole
range are due to changes of quantum corrections.Comment: RevTex 4.0, 10 figures, 7 two-column page
Absence of Floating Delocalized States in a Two-Dimensional Hole Gas
By tracking the delocalized states of the two-dimensional hole gas in a
p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped
out a phase diagram in the density-magnetic-field plane. We found that the
energy of the delocalized state from the lowest Landau level flattens out as
the magnetic field tends toward zero. This finding is different from that for
the two-dimensional electron system in an n-type GaAs/AlGaAs heterostructure
where delocalized states diverge in energy as B goes to zero indicating the
presence of only localized states below the Fermi energy. The possible
connection of this finding to the recently observed metal-insulator transition
at B = 0 in the two-dimensional hole gas systems is discussed.Comment: 10 pages, 4 Postscript figures, To be published in Physical Review B
(Rapid Communications) 58, Sept. 15, 199
Onset of Superfluidity in 4He Films Adsorbed on Disordered Substrates
We have studied 4He films adsorbed in two porous glasses, aerogel and Vycor,
using high precision torsional oscillator and DC calorimetry techniques. Our
investigation focused on the onset of superfluidity at low temperatures as the
4He coverage is increased. Torsional oscillator measurements of the 4He-aerogel
system were used to determine the superfluid density of films with transition
temperatures as low as 20 mK. Heat capacity measurements of the 4He-Vycor
system probed the excitation spectrum of both non-superfluid and superfluid
films for temperatures down to 10 mK. Both sets of measurements suggest that
the critical coverage for the onset of superfluidity corresponds to a mobility
edge in the chemical potential, so that the onset transition is the bosonic
analog of a superconductor-insulator transition. The superfluid density
measurements, however, are not in agreement with the scaling theory of an onset
transition from a gapless, Bose glass phase to a superfluid. The heat capacity
measurements show that the non-superfluid phase is better characterized as an
insulator with a gap.Comment: 15 pages (RevTex), 21 figures (postscript
Strong localization of electrons in quasi-one-dimensional conductors
We report on the experimental study of electron transport in sub-micron-wide
''wires'' fabricated from Si -doped GaAs. These quasi-one-dimensional
(Q1D) conductors demonstrate the crossover from weak to strong localization
with decreasing the temperature. On the insulating side of the crossover, the
resistance has been measured as a function of temperature, magnetic field, and
applied voltage for different values of the electron concentration, which was
varied by applying the gate voltage. The activation temperature dependence of
the resistance has been observed with the activation energy close to the mean
energy spacing of electron states within the localization domain. The study of
non-linearity of the current-voltage characteristics provides information on
the distance between the critical hops which govern the resistance of Q1D
conductors in the strong localization (SL) regime. We observe the exponentially
strong negative magnetoresistance; this orbital magnetoresistance is due to the
universal magnetic-field dependence of the localization length in Q1D
conductors. The method of measuring of the single-particle density of states
(DoS) in the SL regime has been suggested. Our data indicate that there is a
minimum of DoS at the Fermi level due to the long-range Coulomb interaction.Comment: 12 pages, 11 figures; the final version to appear in Phys. Rev.
Electron-Assisted Hopping in Two Dimensions
We have studied the non-ohmic effects in the conductivity of a
two-dimensional system which undergoes the crossover from weak to strong
localization with decreasing electron concentration. When the electrons are
removed from equilibrium with phonons, the hopping conductivity depends only on
the electron temperature. This indicates that the hopping transport in a system
with a large localization length is assisted by electron-electron interactions
rather than by the phonons.Comment: 5 pages, 4 figure
Interaction effects and phase relaxation in disordered systems
This paper is intended to demonstrate that there is no need to revise the
existing theory of the transport properties of disordered conductors in the
so-called weak localization regime. In particular, we demonstrate explicitly
that recent attempts to justify theoretically that the dephasing rate
(extracted from the magnetoresistance) remains finite at zero temperature are
based on the profoundly incorrect calculation. This demonstration is based on a
straightforward evaluation of the effect of the electron-electron interaction
on the weak localization correction to the conductivity of disordered metals.
Using well-controlled perturbation theory with the inverse conductance as
the small parameter, we show that this effect consists of two contributions.
First contribution comes from the processes with energy transfer smaller than
the temperature. This contribution is responsible for setting the energy scale
for the magnetoresistance. The second contribution originates from the virtual
processes with energy transfer larger than the temperature. It is shown that
the latter processes have nothing to do with the dephasing, but rather manifest
the second order (in ) correction to the conductance. This correction is
calculated for the first time. The paper also contains a brief review of the
existing experiments on the dephasing of electrons in disordered conductors and
an extended qualitative discussion of the quantum corrections to the
conductivity and to the density of electronic states in the weak localization
regime.Comment: 34 pages, 13 .eps figure