Frequency Scaling of Microwave Conductivity in the Integer Quantum Hall Effect Minima

We measure the longitudinal conductivity $\sigma_{xx}$ at frequencies $1.246 {\rm GHz} \le f \le 10.05$ GHz over a range of temperatures $235 {\rm mK} \le T \le 4.2$ K with particular emphasis on the Quantum Hall plateaus. We find that $Re(\sigma_{xx})$ scales linearly with frequency for a range of magnetic field around the center of the plateaus, i.e. where $\sigma_{xx}(\omega) \gg \sigma_{xx}^{DC}$. The width of this scaling region decreases with higher temperature and vanishes by 1.2 K altogether. Comparison between localization length determined from $\sigma_{xx}(\omega)$ and DC measurements on the same wafer show good agreement.Comment: latex 4 pages, 4 figure

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.Comment: 10 pages, 5 figures; ACS Nano (2011

Quantum corrections to conductivity: from weak to strong localization

Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for $k_F l=25-2$ and behaves like diffusive one for $k_F l=2-0.5$ down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when $k_F l\simeq 1$. They are close in magnitude to the Drude conductivity so that the conductivity $\sigma$ becomes significantly less than $e^{2}/h$ (the minimal $\sigma$ value achieved in our experiment is about $3\times 10^{-8}\Omega^{-1}$ at $k_Fl\simeq 0.5$ and $T=0.46$ K). We conclude that the temperature and magnetic field dependences of conductivity in whole $k_Fl$ range are due to changes of quantum corrections.Comment: RevTex 4.0, 10 figures, 7 two-column page

Absence of Floating Delocalized States in a Two-Dimensional Hole Gas

By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the delocalized state from the lowest Landau level flattens out as the magnetic field tends toward zero. This finding is different from that for the two-dimensional electron system in an n-type GaAs/AlGaAs heterostructure where delocalized states diverge in energy as B goes to zero indicating the presence of only localized states below the Fermi energy. The possible connection of this finding to the recently observed metal-insulator transition at B = 0 in the two-dimensional hole gas systems is discussed.Comment: 10 pages, 4 Postscript figures, To be published in Physical Review B (Rapid Communications) 58, Sept. 15, 199

Onset of Superfluidity in 4He Films Adsorbed on Disordered Substrates

We have studied 4He films adsorbed in two porous glasses, aerogel and Vycor, using high precision torsional oscillator and DC calorimetry techniques. Our investigation focused on the onset of superfluidity at low temperatures as the 4He coverage is increased. Torsional oscillator measurements of the 4He-aerogel system were used to determine the superfluid density of films with transition temperatures as low as 20 mK. Heat capacity measurements of the 4He-Vycor system probed the excitation spectrum of both non-superfluid and superfluid films for temperatures down to 10 mK. Both sets of measurements suggest that the critical coverage for the onset of superfluidity corresponds to a mobility edge in the chemical potential, so that the onset transition is the bosonic analog of a superconductor-insulator transition. The superfluid density measurements, however, are not in agreement with the scaling theory of an onset transition from a gapless, Bose glass phase to a superfluid. The heat capacity measurements show that the non-superfluid phase is better characterized as an insulator with a gap.Comment: 15 pages (RevTex), 21 figures (postscript

Strong localization of electrons in quasi-one-dimensional conductors

We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $\delta$-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with decreasing the temperature. On the insulating side of the crossover, the resistance has been measured as a function of temperature, magnetic field, and applied voltage for different values of the electron concentration, which was varied by applying the gate voltage. The activation temperature dependence of the resistance has been observed with the activation energy close to the mean energy spacing of electron states within the localization domain. The study of non-linearity of the current-voltage characteristics provides information on the distance between the critical hops which govern the resistance of Q1D conductors in the strong localization (SL) regime. We observe the exponentially strong negative magnetoresistance; this orbital magnetoresistance is due to the universal magnetic-field dependence of the localization length in Q1D conductors. The method of measuring of the single-particle density of states (DoS) in the SL regime has been suggested. Our data indicate that there is a minimum of DoS at the Fermi level due to the long-range Coulomb interaction.Comment: 12 pages, 11 figures; the final version to appear in Phys. Rev.

Electron-Assisted Hopping in Two Dimensions

We have studied the non-ohmic effects in the conductivity of a two-dimensional system which undergoes the crossover from weak to strong localization with decreasing electron concentration. When the electrons are removed from equilibrium with phonons, the hopping conductivity depends only on the electron temperature. This indicates that the hopping transport in a system with a large localization length is assisted by electron-electron interactions rather than by the phonons.Comment: 5 pages, 4 figure

Interaction effects and phase relaxation in disordered systems

This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent attempts to justify theoretically that the dephasing rate (extracted from the magnetoresistance) remains finite at zero temperature are based on the profoundly incorrect calculation. This demonstration is based on a straightforward evaluation of the effect of the electron-electron interaction on the weak localization correction to the conductivity of disordered metals. Using well-controlled perturbation theory with the inverse conductance $g$ as the small parameter, we show that this effect consists of two contributions. First contribution comes from the processes with energy transfer smaller than the temperature. This contribution is responsible for setting the energy scale for the magnetoresistance. The second contribution originates from the virtual processes with energy transfer larger than the temperature. It is shown that the latter processes have nothing to do with the dephasing, but rather manifest the second order (in $1/g$) correction to the conductance. This correction is calculated for the first time. The paper also contains a brief review of the existing experiments on the dephasing of electrons in disordered conductors and an extended qualitative discussion of the quantum corrections to the conductivity and to the density of electronic states in the weak localization regime.Comment: 34 pages, 13 .eps figure