Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous hydrogenated silicon (a-Si:H) on monocrystalline Si wafers are investigated here. We introduce a simple model for the description of the surface recombination mechanism based on recombination through amphoteric defects, i.e. dangling bonds, already established for bulk a-Si:H. In this model, the injection-dependent recombination at the a-Si:H/c-Si interface is governed by the density and the average state of charge of the amphoteric recombination centers. We show that with our surface recombination model, we can discriminate between the respective contribution of the two main mechanisms leading to improved surface passivation, which is achieved by (a) the minimization of the density of recombination centers and (b) the strong reduction of the density of one carrier type near the interface by field effect. We can thereafter reproduce the behaviors experimentally observed for the dependence of the surface recombination on the injection level on different wafers, i.e., of both p and n doping type as well as intrinsic. Finally, we are able to exploit the good surface passivation properties of our a-Si:H layers by fabricating flat heterojunction solar cells with open-circuit voltages exceeding 700 mV. © 2007 The American Physical Society

Kinetics of creation and of thermal annealing of light-induced defects in microcrystalline silicon solar cells

Single-junction microcrystalline silicon (mu c-Si:H) solar cells of selected i-layer crystalline volume fractions were light soaked (AM1.5, 1000 h at 50 degrees C) and subsequently annealed at increasing temperatures. The variations of subbandgap absorption during light soaking and during thermal annealing were monitored by Fourier transform photocurrent spectroscopy. The kinetics were shown to follow stretched exponential functions over long times such as 1000 h. The effective time constants appearing in the stretched exponential function decrease with decreasing crystalline volume fraction as well with increasing annealing temperature. Their Arrhenius-like dependence on temperature is characterized by a unique value of the activation energy. Furthermore, we demonstrate that the configuration of the solar cells (p-i-n or n-i-p) does not influence the degradation kinetics, as long as the average crystallinity of the intrinsic layer is of comparable value. (C) 2008 American Institute of Physics

Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films

Hydrogenated amorphous and nanocrystalline silicon thin films deposited by Hot Wire (HW) and Radio-Frequency Plasma-Enhanced (RF) Chemical Vapor Deposition were Er-bium-implanted. Their pre-implantation structural properties and post-implantation optical properties were studied and cor-related. After one-hour annealing at 150ºC in nitrogen atmos-phere only amorphous films showed photoluminescence (PL) activity at 1.54 μm, measured at 5 K. After further annealing at 300oC for one hour, all the samples exhibited a sharp PL peak positioned at 1.54 m, with a FWHM of ~5 nm. Amorphous films deposited by HW originated a stronger PL peak than corresponding films deposited by RF, while in na-nocrystalline films PL emission was much stronger in sam-ples deposited by RF than by HW. There was no noticeable difference in Er3+ PL activity be-tween films implanted with 1x1014 atoms/cm2 and 5x1015 at-oms/cm2 Er doses.FCT for a post-doctorate grant (SFRH/BPD/14919/2004