Peculiarities of valence band formation in As-Ge-Se semiconductor glasses

Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that compositional dependence of XPS valence band spectra of the investigated glasses correlates well with previously obtained data for constituent glasses of binary GexSe₁₋x and AsxGe₁₋x systems. In particular, increase in х leads to the decrease in the intensity of bands at ~2 eV responsible for Se lp-states. The valley at ~3 eV is filled by electronic states originated from Se-GE and Se-As bonds. An accompanying decrease in the intensity of the band at ~5 eV is explained by a decrease in Se 4p bonding states associated with covalent bonds

Control-monitoring systems of environment temperature and humidity based on oxyspinel thick films

The possibility to use planar-type multilayer thick-film structures based on manganite CuxNi1–x–yCo2yMn2–yO4 and aluminate MgAl2O4 spinel oxide ceramics as integrated temperature-humidity sensors for environmental control-monitoring systems is analysed

Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices

This paper is devoted to the use and further development of the single crystal growing technique invented by Professor Jan Czochralski (1885-1953). The possibilities of the Czochralski technique are demonstrated. Further improvements were introduced at the Scientific Research Company "Carat" (Lviv, Ukraine) to grow large size complex oxide single crystals. The paper presents an overview of some single crystals grown with the use of a modified technology. Growth parameters and properties of resulting crystals are summarized to show a high potential of the Czochralski technique as an industrial technology to grow large-size, high quality, and structurally perfect single crystals of complex oxides

SRC «Electron-Karat» — 45 years of success

The paper is devoted to the Scientific-Production Company «Electron-Karat», its history from the moment of creation to the present day. Described are the significant stages of the company’s development and the scientific and technical results achieved by its team during 45 years

Investigation of bulk acoustic microwaves excited by an interdigital transducer

Excitation of bulk and surface acoustic waves with the interdigital transducer (IDT), which is deposited on the surface of piezoelectric crystal, is widely used in the development of devices in acoustoelectronics and in the design of the microwave acousto-optic deflectors. Excitation of bulk acoustic waves by IDT in the devices on surface acoustic waves leads to the appearance of spurious signals. At the same time excitation of bulk acoustic waves with IDT from the surface of lithium niobate crystals allows creating high frequency acousto-optic deflectors, which makes possible to significantly simplify the technology of their production. Therefore, significant attention is paid to the task of excitation and distribution of bulk acoustic waves with IDT including recent times by the method of simulation of their excitation and distribution. The obtained theoretical results require experimental verification. This paper documents the visualization of acoustic beams excited with IDT from the XY-surface of lithium niobate crystals. The Bragg cells with LiNbO3 crystals coated with IDT with a different period of electrodes were manufactured for the experimental research of excitation and distribution of bulk acoustic waves. Visualization results have shown that the acoustic waves excited with IDT distribute in both the Fresnel zone and the Fraunhofer zone. The length of these zones is caused by individual elementary emitters of which consists the IDT (by their size). At the same time the far zone for IDT is located at distances much greater than the actual size of the LiNbO3 crystals. This peculiarity is not always taken into account when calculating diffraction. The achieved results can be used to design high-frequency acousto-optic devices, as well as in the development of devices based on surface acoustic waves

Sun batteries module based on А3В5 compounds with concentrators of sun energy and system of heatsink

Characteristics of technology of manufacturing epitaxial structures GaAs(AlGaAs)/InGaP with two active p–n-junctions for photocells which are able to work at concentrated solar radiation are considered. New suitable for industry technology of manufacturing and structure of solar batteries module based on epitaxial structures GaAs with Fresnel lens as concentrators of solar energy and a heat sink on the base of a heat pipe, equipped with a radiator sheet are developed. In conditions of 500-fold concentration of natural solar illumination at AM1,5 and 27,8% COE of a photocell, the electric power that is generated by the module reaches 78 Vt

Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method

Silicon p—i—n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides, when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper a technique of growing bilateral high-voltage silicon p—i—n-structures by LPE in a single process is proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions for highly doped (5•1018 cm–3) contact layers: 0.4—0.8 at. % aluminum in gallium melt for growing p-Si-layers and 0.03—0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment, communication systems for household and special purposes, on-board power supply systems, radar systems, medical equipment, etc

The Passively Q-switched Microchip Nd:YAG Laser Optimization for Rangefinder Applications

The problem of Q-switched microchip $Nd^{3+}$:YAG/$Cr^{4+}$:YAG laser optimization is considered. In accordance with requirements of laser location, the optimization consists in determination of such values of the saturable absorber ($Cr^{4+}$:YAG) thickness, the output laser mirror reflectivity and the pumping power, that ensure the generation of the sufficiently short ( ≈0.5 ns) laser pulses at the repetition rate of about 10 kHz and the peak power of about 1 kW or higher. Firstly, the dependences of the laser radiation parameters on the constructive ones are analyzed in the frames of Xiao-Bass model of Q-switched microchip laser. The obtained dependences are used for laser optimization. As it is shown, the parameters of laser radiation close to predominating ones are achieved at the absorber thickness of 140 μm, the output mirror reflectivity of 0.97 and the pumping power of 2.5 W

Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes

It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The concentration of electrons in InP layers decreases and their mobility increases on optimal amounts of Yb and Al in the melt. This technology may be used in producing structures for Gunn diodes, photoreceivers and other optoelectronic devices