Local vibrational modes of the oxygen-vacancy complex in germanium

Infrared absorption of n- and p-Ge crystals enriched with O-16 and/or O-18 isotopes was studied after irradiation with 6-MeV electrons. Absorption spectra were measured at 10 and 300 K. Along with known bands characteristic of oxygen-containing defects, new lines at 669, 944, and 990 cm(-1) were detected. These bands are annealed at temperatures of 120-140degreesC; the band at 621 cm(-1), previously related to the vacancy-oxygen complex in Ge, is simultaneously annealed. The bands at 621 and 669 cm(-1) showed identical temperatures (10 --> 300 K) and oxygen isotope (O-16 --> O-18) shifts. These bands were found to correspond to various charge states of a defect with an energy level near E-v = 0.25 +/- 0.03 eV. It is assumed that such a defect is the vacancy-oxygen complex (A center). The weak bands at 944 and 990 cm(-1) were identified as combinations of asymmetric stretching modes at 621 and 669 cm(-1) with a symmetric one at 320 cm(-1) for neutral and negative charge states of the A center, respectively

Vibrational modes of oxygen dimers in germanium

Infrared absorption of as-grown, heat-treated and electron irradiated Ge crystals enriched with either O-16 or O-18 oxygen isotopes has been studied. Vibrational absorption bands at 780, 818 and 857 cm(-1) (741, 776 and 811 cm(-1)) are assigned to di-oxygen complexes (dimers) in Ge: O-16 (O-18). This assignment is based on an analysis of positions and isotopic shifts of the lines as well as on an investigation of dependencies of line intensities on heat-treatment temperature and oxygen content in the crystals. It is argued that there are two configurations of oxygen dimers in Ge, the bands at 780 and 818 cm(-1) being related to one of them and the band at 857 cm(-1) to another. The binding energy of the dimer giving rise to the bands at 780 and 818 cm(-1) is estimated to be about 0.35-0.4 eV

Idempotent (asymptotic) mathematics and the representation theory

operations by a new set of basic operations (e.g., such as maximum or minimum), that is on replacing numerical fields by idempotent semirings and semifields. Typical (and the most common) examples are given by the so-called (max, +) algebra Rmax and (min, +) algebra Rmin. Let R be the field of real numbers. The

Tin-vacancy complex in germanium

Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 °C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers. © 2011 American Institute of Physics

Radiation-induced defect reactions in tin-doped Ge crystals

We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room temperature [V.P. Markevich etal., J. Appl. Phys. 109 (2011) 083705]. A hole trap with 0.19 eV activation energy for hole emission to the valence band (Eh) has been assigned to an acceptor level of the Sn-V complex. In the present work electrically active defects introduced into Ge:Sn+P crystals by irradiation with 6 MeV electrons and subsequent isochronal annealing in the temperature range 50-300 °C have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is found that the Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 °C. Its disappearance is accompanied by the formation of vacancy-phosphorus (VP) centers. The disappearance of the VP defect upon thermal annealing in irradiated Sn-doped Ge crystals is accompanied by the effective formation of a defect which gives rise to a hole trap with Eh = 0.21 eV and is more thermally stable than other secondary radiation-induced defects in Ge:P samples. This defect is identified as tinvacancy- phosphorus (SnVP) complex. It is suggested that the effective interaction of the VP centers with tin atoms and high thermal stability of the SnVP complex can result in suppression of transient enhanced diffusion of phosphorus atoms in Ge. © (2011) Trans Tech Publications, Switzerland