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Comment on "Mie resonances, infrared emission, and the band gap of InN" - Reply
Physical Review Letter
MBE of GaN with DC-plasma source for nitrogen activation
In this paper we report on the first results of epitaxial growth of GaN layers on GaAs (100) substrates using a modified MBE system, equipped with a DC-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures