Drivers of success in implementing sustainable tourism policies in urban areas

The existing literature in the field of sustainable tourism highlights a number of barriers that impede the implementation of policies in this area. Yet, not many studies have so far considered the factors that would contribute to putting this concept into practice, and few address the case of urban areas. The concept of sustainability has only received limited attention in urban tourism research, even though large cities are recognised as one of the most important tourist destinations that attract vast numbers of visitors. Adopting a case study approach, this paper discusses a number of drivers of success identified by policy-makers in London to contribute to the implementation of sustainable tourisms policies at the local level, and briefly looks at the relationship between these drivers and the constraints perceived by the respondents to hinder the implementation of such policies in practice. These findings may help policy-makers in other large cities to successfully develop and implement policies towards sustainable development of tourism in their area

N incorporation and associated localized vibrational modes in GaSb

We present results of electronic structure calculations on the N-related localized vibrational modes in the dilute nitride alloy GaSb1−xNx. By calculating the formation energies of various possible N incorporation modes in the alloy, we determine the most favorable N configurations, and we calculate their vibrational mode frequencies using density functional theory under the generalized gradient approximation to electron exchange and correlation, including the effects of the relativistic spin-orbit interactions. For a single N impurity, we find substitution on an Sb site, NSb, to be most favorable, and for a two-N-atom complex, we find the N-N split interstitial on an Sb site to be most favorable. For these defects, as well as, for comparison, defects comprising two N atoms on neighboring Sb sites and a N-Sb split interstitial on an Sb site, we find well-localized vibration modes (LVMs), which should be experimentally observable. The frequency of the triply degenerate LVM associated with NSb is determined to be 427.6 cm−1. Our results serve as a guide to future experimental studies to elucidate the incorporation of small concentrations of N in GaSb, which is known to lead to a reduction of the band gap and opens the possibility of using the material for long-wavelength applications

Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy

The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values

Layering transitions for adsorbing polymers in poor solvents

An infinite hierarchy of layering transitions exists for model polymers in solution under poor solvent or low temperatures and near an attractive surface. A flat histogram stochastic growth algorithm known as FlatPERM has been used on a self- and surface interacting self-avoiding walk model for lengths up to 256. The associated phases exist as stable equilibria for large though not infinite length polymers and break the conjectured Surface Attached Globule phase into a series of phases where a polymer exists in specified layer close to a surface. We provide a scaling theory for these phases and the first-order transitions between them.Comment: 4 pages, 4 figure

Surface critical behaviour of the Interacting Self-Avoiding Trail on the square lattice

The surface critical behaviour of the interacting self-avoiding trail is examined using transfer matrix methods coupled with finite-size scaling. Particular attention is paid to the critical exponents at the ordinary and special points along the collapse transition line. The phase diagram is also presented.Comment: Journal of Physics A (accepted

Transition from electron accumulation to depletion at InGaN surfaces

The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1−xN films (0<=x<=1) is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum (CBM) at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x=0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level

Influence of oxygen ordering kinetics on Raman and optical response in YBa_2Cu_3O_{6.4}

Kinetics of the optical and Raman response in YBa_2Cu_3O_{6.4} were studied during room temperature annealing following heat treatment. The superconducting T_c, dc resistivity, and low-energy optical conductivity recover slowly, implying a long relaxation time for the carrier density. Short relaxation times are observed for the B_{1g} Raman scattering -- magnetic, continuum, and phonon -- and the charge transfer band. Monte Carlo simulations suggest that these two relaxation rates are related to two length scales corresponding to local oxygen ordering (fast) and long chain and twin formation (slow).Comment: REVTeX, 3 pages + 4 PostScript (compressed) figure

Band anticrossing in GaNxSb1–x

Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E– and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV

Force-induced desorption of a linear polymer chain adsorbed on an attractive surface

We consider a model of self-avoiding walk on a lattice with on-site repulsion and an attraction for every vertex of the walk visited on the surface to study force-induced desorption of a linear polymer chain adsorbed on an attractive surface and use the exact enumeration technique for analyzing how the critical force for desorption $f_c(T)$ depends on the temperature. The curve $f_c(T)$ gives the boundary separating the adsorbed phase from the desorbed phase. Our results show that in two dimensions where surface is a line the force $f_c(T)$ increases monotonically as temperature is lowered and becomes almost constant at very low temperatures. In case of three-dimensions we, however, find re-entrance, i. e. $f_c(T)$ goes through a maximum as temperature is lowered. The behaviour of the polymer chain at different values of temperature and force is examined by calculating the probability distribution of the height from the surface of the vertex at which external force is applied.Comment: Preprint 15 pages with 8figures and two tables. The file table-2d.ps and table-3d.ps lists C_N(Ns,h) for given N with all possible Ns and h in two and three dimension

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

Electron accumulation is found to occur at the surface of wurtzite (112¯0), (0001), and (0001¯) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Г-point conduction band minimum lying significantly below the charge neutrality level