51 research outputs found
A computational study of Si–H bonds as precursors for neutral E' centres in amorphous silica and at the Si/SiO2 interface
Using computational modelling we investigate whether Si–H Bonds can serve as precursors for neutral E′E′ centre formation in amorphous silica and at the Si/SiO2 interface. Classical inter-atomic potentials are used to construct models of a-SiO2 containing Si–H bonds. We then investigate the mechanism of dissociation of a Si–H bond to create a neutral E′E′ defect, that is a 3-coordinated silicon with an unpaired electron localised on it. We show that the Si–H bond is extremely stable, but as a result of hole injection it is significantly weakened and may dissociate, creating a neutral E′E′ centre and a proton attached to one of the nearby oxygen atoms. The proton can diffuse around the E′E′ centre and has a profound effect on the defect levels. We show that at a Si/SiO2 interface, the position of the proton can facilitate electron transfer from the Si substrate onto the defect, making it negatively charged
On a peculiar feature of longitudinal differential protection of generators reacting to vector values of currents
How to calculate the optimal diameter of a pole tip and winding parameters for DC valve electric magnets with round pole tips
Pyroelectric and piezoelectric hysteresis loops in thin PZT films with excess lead oxide
Adsorption method for the recovery of hydrocarbons from natural gas and associated petroleum gas
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