An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties

In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated.Исследуются процессы накопления радиационных дефектов, образованных осколками деления ядер ²³⁸U, для формирования аморфных фаз в объеме монокристаллического кремния и влияния температуры отжига дефектов на свойства разупорядоченных структур.Досліджуються процеси накопичення радіаційних дефектів, утворених осколками ділення ядер ²³⁸U, для формування аморфних фаз в об'ємі монокристалічного кремнію та впливу температури віджига дефектів на властивості розупорядкованих структур

The Kharkov X-ray Generator Facility NESTOR

WEPWA060 - ISBN 978-3-95450-122-9International audienceThe last few years the sources of the X-rays NESTOR based on a storage ring with low beam energy and Compton scattering of intense laser beam are under design and development in NSC KIPT. The main task of the project is to develop compact intense X-ray generator on the base of relatively cheap accelerator equipment and up-to-date laser technologies. The paper is devoted to description of the last results on construction and commissioning of the facility

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The lateral size of graphene flakes was estimated to be about hundreds of micrometers while the thickness estimated using Raman scattering varied from one to few layers in case of vacuum annealing. Rapid thermal annealing (RTA) in nitrogen ambient results in formation of multilayer graphene with surface covering up to 80%. The graphene layers synthesized on Ni during CVD process was used as reference samples. Atomic force microscopy (AFM) is not able to detect graphene flakes in regime of surface topology examination because of large roughness of Ni surface. Employment of scanning Kelvin probe force microscopy (SKPFM) demonstrates correlation of the surface potential and graphene flakes visible in optical microscopy. Using the KPFM method, potential differences between Ni and graphene were determined