Calculation of Current-Voltage Characteristics of the Optimized Triode with a Cold Cathode Based on the Ordered Array of Single-Wall Metallic Carbon Nanotubes

The current-voltage characteristics of a triode with the plane-parallel electrodes and a cold cathode based on the ordered array of single-wall metallic carbon nanotubes with open ends have been calculated by means of a numerical solution of both the Poisson equation and the quantum-wave equation. The topological parameters of the triode have been optimized. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3536

Calculation of Current-Voltage Characteristics of the Optimized Triode with a Cold Cathode Based on the Ordered Array of Single-Wall Metallic Carbon Nanotubes

The current-voltage characteristics of a triode with the plane-parallel electrodes and a cold cathode based on the ordered array of single-wall metallic carbon nanotubes with open ends have been calculated by means of a numerical solution of both the Poisson equation and the quantum-wave equation. The topological parameters of the triode have been optimized. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3536

Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET

The current-voltage characteristics of nanoscale silicon n-channel MOSFET with 50 nm channel length are calculated in the present study. Both the electron and hole transport are simulated by means of the en-semble Monte Carlo method. The importance of electron impact ionization process in the transistor chan-nel for drain biases higher than 1 V is shown. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3537

Electron transport in armchair single-wall carbon nanotubes

The rates of electron scattering via phonons in the armchair single-wall carbon nanotubes were calculated by using the improved scattering theory within the tight-binding approximation. Therefore, the problem connected with the discrepancy of the scattering rates calculated in the framework of the classical scattering theory and ones predicted by experimental data was clarified. Then these results were used for the solving of the kinetic Boltzmann equation to describe electron transport properties of the nanotubes. The equation was solved numerically by using both the finite difference approach and the Monte Carlo simulation procedure.Comment: 10 pages, 4 figures, accepted for publication in Physica E: Low-Dim. Syst. Nanost