GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient pressure. Growth was performed at ∼2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots.</jats:p

Features of the reparative chondrogenesis course in induced joint cartilage defect and application of cartilage protector

The article reflects information on morphological features of joint cartilage in normal and at induced damage. In animals of the experimental group, the effect of “Stop Arthritis” preparation on the structural and functional cartilage state in the regenerative process dynamics was evaluated. The research was performed based on the Department of Anatomy and Histology of Animals named after Professor A.F. Klimov MSAVMIB — MVA named after K.I. Skryabin. Gonarthrosis modeling was performed on 13 clinically healthy rabbits of Chinchilla breed at the age of 5 months, on which surgical intervention was carried out to create a bilateral articular cartilage defect in the kneecap unit region by excising a fragment of articular cartilage to the subchondral bone. As a result of the studies it was revealed that spontaneous articular cartilage healing after a surgical trauma occurs with the participation of connective tissue pannus, which is obviously formed both on the side of the articular capsule and the subchondral bone. In this case, healing is accompanied by subchondral osteoporosis, as well as the development of deforming arthrosis in the kneecap block area. It was shown that the use of “Stop Arthritis” cartilage protector optimizes reparative chondro- and osteogenesis in damaged tissues of the knee joint, which is confirmed by the formation of a holistic articular coating with organ-specific zonal differentiation

GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

AbstractIn this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient pressure. Growth was performed at ∼2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots.</jats:p

Features of the reparative chondrogenesis course in induced joint cartilage defect and application of cartilage protector

The article reflects information on morphological features of joint cartilage in normal and at induced damage. In animals of the experimental group, the effect of “Stop Arthritis” preparation on the structural and functional cartilage state in the regenerative process dynamics was evaluated. The research was performed based on the Department of Anatomy and Histology of Animals named after Professor A.F. Klimov MSAVMIB — MVA named after K.I. Skryabin. Gonarthrosis modeling was performed on 13 clinically healthy rabbits of Chinchilla breed at the age of 5 months, on which surgical intervention was carried out to create a bilateral articular cartilage defect in the kneecap unit region by excising a fragment of articular cartilage to the subchondral bone. As a result of the studies it was revealed that spontaneous articular cartilage healing after a surgical trauma occurs with the participation of connective tissue pannus, which is obviously formed both on the side of the articular capsule and the subchondral bone. In this case, healing is accompanied by subchondral osteoporosis, as well as the development of deforming arthrosis in the kneecap block area. It was shown that the use of “Stop Arthritis” cartilage protector optimizes reparative chondro- and osteogenesis in damaged tissues of the knee joint, which is confirmed by the formation of a holistic articular coating with organ-specific zonal differentiation.</jats:p

Morphological, electrical, and optical properties of InN grown by hydride

We report studies of the morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy. The layers have been grown on c-plane sapphire substrates and epitaxial GaN, Al0.7Ga0.3N, and AlN templates grown on sapphire. InN properties are found to depend on template type with improvement of crystal structure in the template substrate order AlN→AlGaN→GaN. X-ray studies reveal InN layers grown on template substrates to be relaxed with lattice constants a=3.542 Å and c=5.716 Å. The Raman spectra and optical gaps of the InN layers, vary with free-carrier concentration in agreement with previous studies. We obtain a value of 2.5±0.2 for the index of refraction of InN