Spin-polarized electron transport in ferromagnet/semiconductor heterostructures: Unification of ballistic and diffusive transport

A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. A key element of the unified description of transport inside a (nondegenerate) semiconductor is the thermoballistic current consisting of electrons which move ballistically in the electric field arising from internal and external electrostatic potentials, and which are thermalized at randomly distributed equilibration points. The ballistic component in the unified description gives rise to discontinuities in the chemical potential at the boundaries of the semiconductor, which are related to the Sharvin interface conductance. By allowing spin relaxation to occur during the ballistic motion between the equilibration points, a thermoballistic spin-polarized current and density are constructed in terms of a spin transport function. An integral equation for this function is derived for arbitrary values of the momentum and spin relaxation lengths. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the standard spin drift-diffusion equation. The spin polarization in ferromagnet/semiconductor heterostructures is obtained by invoking continuity of the current spin polarization and matching the spin-resolved chemical potentials on the ferromagnet sides of the interfaces. Allowance is made for spin-selective interface resistances. Examples are considered which illustrate the effects of transport mechanism and electric field.Comment: 23 pages, 8 figures, REVTEX 4; minor corrections introduced; to appear in Phys. Rev.

Local spin density in two-dimensional electron gas with hexagonal boundary

The intrinsic spin-Hall effect in hexagon-shaped samples is investigated. To take into account the spin-orbit couplings and to fit the hexagon edges, we derive the triangular version of the tight-binding model for the linear Rashba [Sov. Phys. Solid State 2, 1109 (1960)] and Dresselhaus [Phys. Rev. 100, 580 (1955)] [001] Hamiltonians, which allow direct application of the Landauer-Keldysh non-equilibrium Green function formalism to calculating the local spin density within the hexagonal sample. Focusing on the out-of-plane component of spin, we obtain the geometry-dependent spin-Hall accumulation patterns, which are sensitive to not only the sample size, the spin-orbit coupling strength, the bias strength, but also the lead configurations. Contrary to the rectangular samples, the accumulation pattern can be very different in our hexagonal samples. Our present work provides a fundamental description of the geometry effect on the intrinsic spin-Hall effect, taking the hexagon as the specific case. Moreover, broken spin-Hall symmetry due to the coexistence of the Rashba and Dresselhaus couplings is also discussed. Upon exchanging the two coupling strengths, the accumulation pattern is reversed, confirming the earlier predicted sign change in spin-Hall conductivity.Comment: 7 pages, 4 figure

Spin relaxation of conduction electrons in (110)-grown quantum wells

The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along the growth direction is characterized by two different lifetimes and leads to the appearance of an in-plane spin component. The magnitude and sign of the in-plane component are determined by the structure inversion asymmetry of the quantum well and can be tuned by the gate voltage. In an external magnetic field, the interplay of cyclotron motion of carriers and the Larmor precession of electron spin can result in a nonmonotonic dependence of the spin density on the magnetic field.Comment: 5 pages, 3 figure

Theory of superfast fronts of impact ionization in semiconductor structures

We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.Comment: 18 pagers, 10 figure

Spin blockade at semiconductor/ferromagnet junctions

We study theoretically extraction of spin-polarized electrons at nonmagnetic semiconductor/ferromagnet junctions. The outflow of majority spin electrons from the semiconductor into the ferromagnet leaves a cloud of minority spin electrons in the semiconductor region near the junction, forming a local spin-dipole configuration at the semiconductor/ferromagnet interface. This minority spin cloud can limit the majority spin current through the junction creating a pronounced spin-blockade at a critical current. We calculate the critical spin-blockade current in both planar and cylindrical geometries and discuss possible experimental tests of our predictions.Comment: to be published in PR

Dimensional Control of Antilocalisation and Spin Relaxation in Quantum Wires

The spin relaxation rate $1/\tau_s (W)$ in disordered quantum wires with Rashba and Dresselhaus spin-orbit coupling is derived analytically as a function of wire width $W$. It is found to be diminished when $W$ is smaller than the bulk spin-orbit length $L_{\rm SO}$. Only a small spin relaxation rate due to cubic Dresselhaus coupling $\gamma$ is found to remain in this limit. As a result, when reducing the wire width $W$ the quantum conductivity correction changes from weak anti- to weak localization and from negative to positive magnetoconductivity.Comment: 4.0 pages, 3 figures, final version, Refs. updated, introduction and formula for spin relaxation rate adde

Spin relaxation in semiconductor quantum dots

We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation of the electron in the dot both with and without a magnetic field. We have shown that the zero-dimensional character of the problem when electron wave functions are localized in all directions leads to freezing out of the most effective spin-flip mechanisms related to the absence of the inversion centers in the elementary crystal cell and at the heterointerface and, as a result, to unusually low spin-flip rates.Comment: 6 pages, RevTe

Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling

We performed path integral simulations of spin evolution controlled by the Rashba spin-orbit interaction in the semiclassical regime for chaotic and regular quantum dots. The spin polarization dynamics have been found to be strikingly different from the D'yakonov-Perel' (DP) spin relaxation in bulk systems. Also an important distinction have been found between long time spin evolutions in classically chaotic and regular systems. In the former case the spin polarization relaxes to zero within relaxation time much larger than the DP relaxation, while in the latter case it evolves to a time independent residual value. The quantum mechanical analysis of the spin evolution based on the exact solution of the Schroedinger equation with Rashba SOI has confirmed the results of the classical simulations for the circular dot, which is expected to be valid in general regular systems. In contrast, the spin relaxation down to zero in chaotic dots contradicts to what have to be expected from quantum mechanics. This signals on importance at long time of the mesoscopic echo effect missed in the semiclassical simulations.Comment: 14 pages, 9 figure

Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells

Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.Comment: 4 pages, 3 figure

Theory of Electric Dipole Spin Resonance in a Parabolic Quantum Well

A theory of Electric Dipole Spin Resonance (EDSR), that is caused by various mechanisms of spin-orbit coupling, is developed as applied to free electrons in a parabolic quantum well. Choosing a parabolic shape of the well has allowed us to find explicit expressions for the EDSR intensity and its dependence on the magnetic field direction in terms of the basic parameters of the Hamiltonian. By using these expressions, we have investigated and compared the effect of specific mechanisms of spin orbit (SO) coupling and different polarizations of ac electric field on the intensity of EDSR. Angular dependences of the EDSR intensity are indicative of the relative contributions of the competing mechanisms of SO coupling. Our results show that electrical manipulating electron spins in quantum wells is generally highly efficient, especially by an in-plane ac electric field.Comment: 45 pages 6 figur