79 research outputs found
Influence of free carriers on exciton ground states in quantum wells
The influence of free carriers on the ground state of the exciton at zero
magnetic field in a quasi-two-dimensional quantum well doped with electrons is
considered in the framework of the random phase approximation. The effects of
the exciton-charge-density interaction and the inelastic scattering processes
due to the Hartree-Fock electron-electron exchange interaction are taken into
account. The effect of phase-space filling is considered using an approximate
approach. The results of the calculation are compared with the experimental
data available.Comment: 8 pages, 5 fugure
Manifestation of interface anisotropy in CdTe quantum wells
Photoluminescence and polarized reflection spectra of quantum well structures
with symmetric CdZnTe/CdTe/CdZnTe and
asymmetric CdZnTe/CdTe/CdMgTe barriers were
studied. The Stokes parameters of the reflected light from these structures
were measured. In the structures with symmetric barriers, exciton resonances
were found in the reflection spectra and were not present in the
photoluminescence spectra. In structures with asymmetric barriers, in the
region of exciton resonances, the phenomenon of light birefringence was
detected, caused by a lower symmetry of the interfaces compared to the symmetry
of bulk crystals. A discussion of both phenomena was given
Optical Study of GaAs quantum dots embedded into AlGaAs nanowires
We report on the photoluminescence characterization of GaAs quantum dots
embedded into AlGaAs nano-wires. Time integrated and time resolved
photoluminescence measurements from both an array and a single quantum
dot/nano-wire are reported. The influence of the diameter sizes distribution is
evidenced in the optical spectroscopy data together with the presence of
various crystalline phases in the AlGaAs nanowires.Comment: 5 page, 5 figure
Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs
quantum wells are measured by means of Hanle effect. Three different spin
relaxation times for spins oriented along [110], [1-10] and [001]
crystallographic directions are extracted demonstrating anisotropy of
D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba
and Dresselhaus terms describing the spin-orbit coupling in semiconductor
quantum well structures. It is shown that the Rashba spin-orbit splitting is
about four times stronger than the Dresselhaus splitting in the studied
structure.Comment: 4 pages, 3 figure
Phase diagrams of magnetopolariton gases
The magnetic field effect on phase transitions in electrically neutral
bosonic systems is much less studied than those in fermionic systems, such as
superconducting or ferromagnetic phase transitions. Nevertheless, composite
bosons are strongly sensitive to magnetic fields: both their internal structure
and motion as whole particles may be affected. A joint effort of ten
laboratories has been focused on studies of polariton lasers, where
non-equilibrium Bose-Einstein condensates of bosonic quasiparticles,
exciton-polaritons, may appear or disappear under an effect of applied magnetic
fields. Polariton lasers based on pillar or planar microcavities were excited
both optically and electrically. In all cases a pronounced dependence of the
onset to lasing on the magnetic field has been observed. For the sake of
comparison, photon lasing (lasing by an electron-hole plasma) in the presence
of a magnetic field has been studied on the same samples as polariton lasing.
The threshold to photon lasing is essentially governed by the excitonic Mott
transition which appears to be sensitive to magnetic fields too. All the
observed experimental features are qualitatively described within a uniform
model based on coupled diffusion equations for electrons, holes and excitons
and the Gross-Pitaevskii equation for exciton-polariton condensates. Our
research sheds more light on the physics of non-equilibrium Bose-Einstein
condensates and the results manifest high potentiality of polariton lasers for
spin-based quantum logic applications.Comment: 21 pages, 11 figure
Optical Method for Determination of Carrier Density in Modulation Doped Quantum Wells
An optical method is suggested to determine the concentration of
two-dimensional electrons in modulation-doped quantum wells at low and moderate
electron densities between 10^{9} and 2x10^{11} cm^{-2}. The method is based on
an analysis of magneto-reflectivity spectra of charged excitons (trions). The
circular polarization degree and the oscillator strength of the charged
excitons contain information about the density and spin polarization of
two-dimensional electron gas. The method is applied to CdTe/(Cd,Mg)Te and
ZnSe/Zn,Mg)(S,Se) heterostructures
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