Electronic Raman scattering in Tl2Ba2CuO6+x: symmetry of the order parameter, oxygen doping effects, and normal state scattering

Single crystals of the optimally doped, moderately and strongly overdoped high temperature superconductor Tl2Ba2CuO6+x (Tl-2201) with Tc=80, 56 and 30K, respectively, have been investigated by polarized Raman scattering. By taking the peak position of the B_1g component of electronic Raman scattering as 2Delta_0 we found that the reduced gap value (2Delta_0/k_BT_c) strongly decreases with increasing doping. The behavior of the low frequency scattering for the B_1g and B_2g scattering components is similar for optimally doped and overdoped crystals and can be described by a w^3 - and w -law, respectively, which is consistent with a d-wave symmetry of the order parameter. In contrast to the optimally doped Tl-2201 in both, moderately and strongly overdoped Tl-2201, the relative (compared to the B_1g) intensity of the A_1g scattering component is suppressed. We suggest that the van Hove singularity is responsible for the observed changes of Raman intensity and reduced gap value with doping. Electronic Raman scattering in the normal state is discussed in the context of the scattering from impurities and compared to the existing infrared data. The scattering rate evaluated from the Raman measurements is smaller for the overdoped samples, compared to the moderately overdoped samples.Comment: 7 pages, 7 figure

Multiple magnon modes in the Co3_3Sn2_2S2_2 Weyl semimetal candidate

We experimentally investigate electron transport in kagome-lattice ferromagnet Co$_3$Sn$_2$S$_2$, which is regarded as a time-reversal symmetry broken Weyl semimetal candidate. We demonstrate $dV/dI(I)$ curves with pronounced asymmetric $dV/dI$ spikes, similar to those attributed to current-induced spin-wave excitations in ferromagnetic multilayers. In contrast to multilayers, we observe several $dV/dI$ spikes' sequences at low, $\approx$10$^4$ A/cm$^2$, current densities for a thick single-crystal Co$_3$Sn$_2$S$_2$ flake in the regime of fully spin-polarized bulk. The spikes at low current densities can be attributed to novel magnon branches in magnetic Weyl semimetals, which are predicted due to the coupling between two magnetic moments mediated by Weyl fermions. Presence of spin-transfer effects at low current densities in Co$_3$Sn$_2$S$_2$ makes the material attractive for applications in spintronics.Comment: final versio

Multivalued current-phase relationship in a.c. Josephson effect for a three-dimensional Weyl semimetal WTe2_2

We experimentally study electron transport between two superconducting indium leads, coupled to a single WTe$_2$ crystal, which is a three-dimensional Weyl semimetal. We demonstrate Josephson current in long 5~$\mu$m In-WTe$_2$-In junctions, as confirmed by the observation of integer (1,2,3) and fractional (1/3, 1/2, 2/3) Shapiro steps under microwave irradiation. Demonstration of fractional a.c. Josephson effect indicates multivalued character of the current-phase relationship, which we connect with Weyl topological surface states contribution to Josephson current. In contrast to topological insulators and Dirac semimetals, we do not observe $4\pi$ periodicity in a.c. Josephson effect for WTe$_2$ at different frequencies and power, which might reflect chiral character of the Fermi arc surface states in Weyl semimetal.Comment: the text is seriously corrected. arXiv admin note: text overlap with arXiv:1801.0955

Signature of Fermi arc surface states in Andreev reflection at the WTe2_2 Weyl semimetal surface

We experimentally investigate charge transport through the interface between a niobium superconductor and a three-dimensional WTe$_2$ Weyl semimetal. In addition to classical Andreev reflection, we observe sharp non-periodic subgap resistance resonances. From an analysis of their positions, magnetic field and temperature dependencies, we can interpret them as an analog of Tomasch oscillations for transport along the topological surface state across the region of proximity-induced superconductivity at the Nb-WTe$_2$ interface. Observation of distinct geometrical resonances implies a specific transmission direction for carriers, which is a hallmark of the Fermi arc surface states.Comment: 5 pages, some misprints has been correcte

Revisión de la edad del Grupo de Asha en los Urales meridionales

The Asha Group of the South Urals, initially erected by Albert Olli as Palaeozoic sedimentary complex, more than half a century ago was considered as a key section for the Vendian (Ediacaran) of the western slope of the South Urals. However, the ca. 1700 m-thick terrigenous sedimentary sequence is characterised by unusual low biodiversity of Ediacaran macrofossils, which might be explained by relatively young age of the Asha Group and possible mass extinction event in the end of Ediacaran Period. The relatively young age was confirmed by the U-Pb zircon date of 547.6±3.8 Ma obtained from the tuff in the lower part of the Basa Formation as well as finding of ichnospecies Didymaulichnus tirasensis in the upper part of Zigan formation. However, in 2018 it has been documented there the mass appearing of D. tirasensis in the lowermost part of the Basa Formation. Therefore, the Vendian (Ediacaran) age of the Asha Group of the South Urals can be revisited in favour to terminal Ediacaran- Cambrian or even early Cambrian.El Grupo de Asha de los Urales meridionales, inicialmente definido por Albert Olli como complejo sedimentario paleozoico, hace más de medio siglo, fue considerado como una sección clave para el Véndico (Ediacárico) de la vertiente occidental de los Urales meridionales. Sin embargo, secuencia sedimentaria terrígena de unos 1.700 m de espesor se caracteriza por una biodiversidad inusualmente baja de macrofósiles ediacaranos, lo que podría explicarse por la edad relativamente temprana del grupo y el posible evento de extinción masiva que marca el final del período Ediacárico. La edad relativamente temprana fue confirmada por la datación de 547.6±3.8 Ma obtenida de una toba en la parte inferior de la Formación de Basa, así como por el hallazgo de la iconospecie Didymaulichnus tirasensis en la parte superior de la Formación de Zigan. Sin embargo, en 2018 se ha documentó la aparición masiva de D. tirasensis en la parte más baja de la Formación de Basa. Por lo tanto, la edad Véndico (Ediacárico) del Grupo de Asha de los Urales meridionales puede ser reconsiderada en favor del Ediacárico terminal-Cámbrico o incluso del Cambrian temprano

Gate-dependent non-linear Hall effect at room temperature in topological semimetal GeTe

We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$ substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gate field screening by bulk carriers. In contrast, by transverse voltage measurements, we demonstrate that the non-linear Hall effect shows pronounced dependence on the gate electric field at room temperature. Since the non-linear Hall effect is a direct consequence of a Berry curvature dipole in topological media, our observations indicate that Berry curvature can be controlled by the gate electric field. This experimental observation can be understood as a result of the known dependence of giant Rashba splitting on the external electric field in GeTe. For possible applications, the zero-frequency gate-controlled non-linear Hall effect can be used for the efficient broad-band rectification

Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe2_2

The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe$_2$ is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor is polarized in-plane, so one should expect complicated polarization structure at the SnSe/WTe$_2$ interface. We study $dI/dV(V)$ curves, which demonstrate sharp symmetric drop to zero $dI/dV$ differential conductance at some threshold bias voltages $\pm V_{th}$, which are nearly symmetric in respect to the bias sign. While the gate electric field is too small to noticeably affect the carrier concentration, the positive and negative threshold positions are sensitive to the gate voltage. Also, SnSe/WTe$_2$ heterostructure shows re-entrant transition to the low-conductive $dI/dV=0$ state for abrupt change of the bias voltage even below the threshold values. This behavior can not be observed for single SnSe or WTe$_2$ flakes, so we interpret it as a result of the SnSe/WTe$_2$ interface coupling. In this case, some threshold value of the electric field at the SnSe/WTe$_2$ interface is enough to drive 90$^\circ$ change of the initial SnSe in-plane polarization in the overlap region. The polarization mismatch leads to the significant interface resistance contribution, analogously to the scattering of the charge carriers on the domain walls. Thus, we demonstrate polarization state control by electron transport through the SnSe/WTe$_2$ interface