Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching

We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (μ-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 μm tall NPs functions as a “detector” in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400–700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications.The work was performed within the Linne Center for Advanced Optics and Photonics [Grant No.: 349-2007-8664] funded by the Swedish Research Council (VR). Support from the EU network of excellence “Nanophotonics for Energy Efficiency” [Grant No.: 248855] and from “Nanordsun” [Grant No.: 10048] funded by Nordic Innovation centre are also acknowledged. S.N. and N.S. acknowledge the Higher Education Commission of Pakistan for partially supporting their PhD studies (scholarship). The CL study was done in the nmC@LU with support from VR and Kurt Alice Wallenberg (KAW) foundation. The authors thank M. Hammar and J. Berggren for the MOVPE growth

Nonlinear annihilation of excitations in photosynthetic systems.

The theory of the singlet-singlet annihilation in quasi-homogeneous photosynthetic antenna systems is developed further. In the new model, the following important contributions are taken into account: 1) the finite excitation pulse duration, 2) the occupation of higher excited states during the annihilation, 3) excitation correlation effects, and 4) the effect of local heating. The main emphasis is concentrated on the analysis of pump-probe kinetic measurements demonstrating the first two above possible contributions. The difference with the results obtained from low-intensity fluorescence kinetic measurements is highlighted. The experimental data with picosecond time resolution obtained for the photosynthetic bacterium Rhodospirillum rubrum at room temperature are discussed on the basis of this theory

Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching

We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications. (C) 2013 AIP Publishing LLC

Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes

GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations

Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes

GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations

Identification of the upper exciton component of the B850 bacteriochlorophylls of the LH2 antenna complex, using a B800-free mutant of Rhodobacter sphaeroides

In this paper, we report the circular dichroism (CD) spectra of two types of LH2-only mutants of Rhodobacter sphaeroides. In the first, only the wild type LH2 is present, while i the second, the B800 binding site of LH2 has been either destabilized or removed. For the first time, we have identified a band in the CD spectrum of LH2, located at approximately 780 nm, that can be ascribed to the high exciton component of the B850 band. The experimental spectra have been modeled by theoretical calculations. On this basis, the average interaction strength between the monomers in the B850 ring can be estimated to be approximately 300 cm-1. In addition, we suggest that in LH2 of Rb. sphaeroides the angles made by the Qy transitions of the B850 BChls with respect to the plane of the ring are slightly different from those calculated from the crystal structure of the Rhodopseudomonas acidophila LH2 complex