Quality factor of thin-film Fabry-Perot resonators: dependence on interface roughness

Thin-film Fabry-Perot (F-P) optical resonators are studied for application as wavelength-selecting elements in on-chip spectrometers. The interface roughness between the different resonator layers (Al /PECVD SiO2 / Ag) is identified to be the primary source of light scattering and energy losses. It is demonstrated that conventional IC fabrication yields layers with RMS interface roughness easily exceeding 10 nm. When applied to the visible spectral range, such a roughness causes significant degradation of the F-P filter quality factor. Moreover, the scattered light contributes to transmittance outside the narrow resonance band to which the F-P filter is tuned and overall device performance is decreased

A method for atomistic spin dynamics simulations: implementation and examples

We present a method for performing atomistic spin dynamic simulations. A comprehensive summary of all pertinent details for performing the simulations such as equations of motions, models for including temperature, methods of extracting data and numerical schemes for performing the simulations is given. The method can be applied in a first principles mode, where all interatomic exchange is calculated self-consistently, or it can be applied with frozen parameters estimated from experiments or calculated for a fixed spin-configuration. Areas of potential applications to different magnetic questions are also discussed. The method is finally applied to one situation where the macrospin model breaks down; magnetic switching in ultra strong fields.Comment: 14 pages, 19 figure

Deterministic spatio-temporal control of nano-optical fields in optical antennas and nano transmission lines

We show that pulse shaping techniques can be applied to tailor the ultrafast temporal response of the strongly confined and enhanced optical near fields in the feed gap of resonant optical antennas (ROAs). Using finite-difference time-domain (FDTD) simulations followed by Fourier transformation, we obtain the impulse response of a nano structure in the frequency domain, which allows obtaining its temporal response to any arbitrary pulse shape. We apply the method to achieve deterministic optimal temporal field compression in ROAs with reduced symmetry and in a two-wire transmission line connected to a symmetric dipole antenna. The method described here will be of importance for experiments involving coherent control of field propagation in nanophotonic structures and of light-induced processes in nanometer scale volumes.Comment: 5 pages, 5 figure

Photoproduction of eta-mesic 3He

The photoproduction of eta-mesic 3He has been investigated using the TAPS calorimeter at the Mainz Microtron accelerator facility MAMI. The total inclusive cross section for the reaction gamma+3He->eta+X has been measured for photon energies from threshold to 820 MeV. The total and angular differential coherent eta cross sections have been extracted up to energies of 745 MeV. A resonance-like structure just above the eta production threshold with an isotropic angular distribution suggests the existence of a resonant quasi-bound state. This is supported by studies of a competing decay channel of such a quasi-bound eta-mesic nucleus into pi^0+p+X. A binding energy of (-4.4+-4.2) MeV and a width of (25.6+-6.1) MeV is deduced for the quasi-bound eta-mesic state in 3He.Comment: v1: 4 pages, 4 figures, submitted to PRL; v2: minor revisions and corrections, new figure added, 4 pages, 5 figs; v3: minor change

A Numerical Transfer-Matrix Study of Surface-Tension Anisotropy in Ising Models on Square and Cubic Lattices

We compute by numerical transfer-matrix methods the surface free energy $\tau(T),$ the surface stiffness coefficient $\kappa(T),$ and the single-step free energy $s(T)$ for Ising ferromagnets with $(\infty \times L)$ square-lattice and $(\infty \times L \times M)$ cubic-lattice geometries, into which an interface is introduced by imposing antiperiodic or plus/minus boundary conditions in one transverse direction. These quantities occur in expansions of the angle-dependent surface tension, either for rough or for smooth interfaces. The finite-size scaling behavior of the interfacial correlation length provides the means of investigating $\kappa(T)$ and $s(T).$ The resulting transfer-matrix estimates are fully consistent with previous series and Monte Carlo studies, although current computational technology does not permit transfer-matrix studies of sufficiently large systems to show quantitative improvement over the previous estimates.Comment: 40 pages, 17 figures available on request. RevTeX version 2.

The Block Spin Renormalization Group Approach and Two-Dimensional Quantum Gravity

A block spin renormalization group approach is proposed for the dynamical triangulation formulation of two-dimensional quantum gravity. The idea is to update link flips on the block lattice in response to link flips on the original lattice. Just as the connectivity of the original lattice is meant to be a lattice representation of the metric, the block links are determined in such a way that the connectivity of the block lattice represents a block metric. As an illustration, this approach is applied to the Ising model coupled to two-dimensional quantum gravity. The correct critical coupling is reproduced, but the critical exponent is obscured by unusually large finite size effects.Comment: 10 page

Ising model with memory: coarsening and persistence properties

We consider the coarsening properties of a kinetic Ising model with a memory field. The probability of a spin-flip depends on the persistence time of the spin in a state. The more a spin has been in a given state, the less the spin-flip probability is. We numerically studied the growth and persistence properties of such a system on a two dimensional square lattice. The memory introduces energy barriers which freeze the system at zero temperature. At finite temperature we can observe an apparent arrest of coarsening for low temperature and long memory length. However, since the energy barriers introduced by memory are due to local effects, there exists a timescale on which coarsening takes place as for the Ising model. Moreover the two point correlation functions of the Ising model with and without memory are the same, indicating that they belong to the same universality class.Comment: 10 pages, 7 figures; some figures and some comments adde

Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60 {\deg}C. The Geant4 toolkit for simulation of the passage of particles through matter was used to simulate the deposited energy homogeneity, to verify the equal distribution of total deposited energies through all the layers of irradiated samples, and to calculate the secondary electron spectra in the irradiation box. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring current-voltage characteristics (IV), and the evolution of the full depletion voltage with the total ionizing dose, by measuring capacitance-voltage characteristics (CV). It has been observed that the bulk leakage current increases linearly with total ionizing dose, and the damage coefficient depends on the initial resistivity of the silicon diode. The effective doping concentration and therefore full depletion voltage significantly decreases with increasing total ionizing dose, before starting to increase again at a specific dose. We assume that this decrease is caused by the effect of acceptor removal. Another noteworthy observation of this study is that the IV and CV measurements of the gamma irradiated diodes do not reveal any annealing effect

Recombination of H3+ Ions in the Afterglow of a He-Ar-H2 Plasma

Recombination of H3+ with electrons was studied in a low temperature plasma in helium. The plasma recombination rate is driven by two body, H3+ + e, and three-body, H3+ + e + He, processes with the rate coefficients 7.5x10^{-8}cm3/s and 2.8x10^{-25}cm6/s correspondingly at 260K. The two-body rate coefficient is in excellent agreement with results from storage ring experiments and theoretical calculations. We suggest that the three-body recombination involves formation of highly excited Rydberg neutral H3 followed by an l- or m- changing collision with He. Plasma electron spectroscopy indicates the presence of H3.Comment: 4 figure