On the cellular autoimmune mechanism for eliminating erythrocytes normally and under extreme influences

The presence of an autoimmune cellular mechanism for destroying erythrocytes on the basis of results of experiments in vivo is demonstrated in the blood and the organs. This mechanism is made up of a population of immunocompetent killer-lymphocytes which originates in the bone marrow and the thymus, and which is manifested in the local hemolysis effect

Direct measurements of the fractional quantum Hall effect gaps

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed

Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin

We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass with decreasing electron density is observed. The mass renormalization as a function of the interaction parameter r_s is in good agreement with that reported for (100)-silicon, which shows that the relative mass enhancement is system- and disorder-independent being determined by electron-electron interactions only.Comment: As publishe

Sharply increasing effective mass: a precursor of the spontaneous spin polarization in a dilute two-dimensional electron system

We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons' spins and (ii) analysis of the Shubnikov-de Haas oscillations. We have observed a sharp increase of the effective mass with decreasing electron density while the g-factor remains nearly constant and close to its value in bulk silicon. The corresponding strong rise of the spin susceptibility may be a precursor of a spontaneous spin polarization; unlike in the Stoner scenario, it originates from the enhancement of the effective mass rather than the increase of g-factor. Furthermore, using tilted magnetic fields, we have found that the enhanced effective mass is independent of the degree of spin polarization and, therefore, its increase is not related to spin exchange effects, in contradiction with existing theories. Our results show that the dilute 2D electron system in silicon behaves well beyond a weakly interacting Fermi liquid.Comment: This paper summarizes results reported in our recent publications on the subjec

Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment

It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and on the area dependence of the average length of closed paths. Based on this line of attack the method of analysis of the negative magnetoresistance is suggested. The method has been used to process the experimental data on negative magnetoresistance in 2D structures with different relations between the momentum and phase relaxation times. It is demonstrated this fact leads to distinction in the area dependence of the average length of closed paths.Comment: 5 pages, 5 figures, to be published in Phys.Rev.

Observation of the parallel-magnetic-field-induced superconductor-insulator transition in thin amorphous InO films

We study the response of a thin superconducting amorphous InO film with variable oxygen content to a parallel magnetic field. A field-induced superconductor-insulator transition (SIT) is observed that is very similar to the one in normal magnetic fields. As the boson-vortex duality, which is the key-stone of the theory of the field-induced SIT, is obviously absent in the parallel configuration, we have to draw conclusion about the theory insufficiency.Comment: 3 pages, 4 figure

On the Electron-Electron Interactions in Two Dimensions

In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system.Comment: Added refs; corrected typos. 19 pages, 7 figures. To be published in: Chapter 19, Proceedings of the EURESCO conference "Fundamental Problems of Mesoscopic Physics ", Granada, 200

Quantization of the Hall conductivity well beyond the adiabatic limit in pulsed magnetic fields

We measure the Hall conductivity, $\sigma_{xy}$, on a Corbino geometry sample of a high-mobility AlGaAs/GaAs heterostructure in a pulsed magnetic field. At a bath temperature about 80 mK, we observe well expressed plateaux in $\sigma_{xy}$ at integer filling factors. In the pulsed magnetic field, the Laughlin condition of the phase coherence of the electron wave functions is strongly violated and, hence, is not crucial for $\sigma_{xy}$ quantization.Comment: 4 pages, 4 figures, submitted to PR