Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

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Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel

Electron transport and drain current noise in field effect transistor with $n^+$ $nn^+$ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability

Plasma Instability Noise in InP n⁺nn⁺ Structures: Monte Carlo Simulation

The current noise in n⁺nn⁺ InP structures at dominating low temperature (T = 10 K) optical phonon emission is simulated by Monte Carlo particle technique. The n-region length of simulated structures is varied from 1 to 100 μm. The peaks related to the near collisionless and optical phonon emission dominated plasma instabilities are recognized in current noise spectral density spectra

Small and Large Signal Analysis of Terahertz Generation from InN n+\text{}^{+}nn+\text{}^{+} Structures with Free-Carrier Grating

Electron transport in long (up to 15μm) InN n$\text{}^{+}$nn$\text{}^{+}$ structures is theoretically investigated by the Monte Carlo particle technique at low lattice temperatures when optical phonon emission is the dominating scattering mechanism. It is shown that at constant bias a free-carrier grating can be formed inside the n-region. Such a grating is found to be responsible for microwave power generation in the THz frequency range. The generation mechanism is similar to that in submicron n$\text{}^{+}$nn$\text{}^{+}$ structures under quasiballistic transport conditions

Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique

Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of $10^{15} cm^{-3}$ is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure

Plasma Instability Noise in InP n + nn + Structures: Monte Carlo Simulation

The current noise in n + nn + InP structures at dominating low temperature (T = 10 K) optical phonon emission is simulated by Monte Carlo particle technique. The n-region length of simulated structures is varied from 1 to 100 µm. The peaks related to the near collisionless and optical phonon emission dominated plasma instabilities are recognized in current noise spectral density spectra

Coherent Terahertz Radiation Generation Assisted by Low-Temperature Optical Phonon Emission: Achievements and Perspectives

International audienc

Fluctuation-dissipation relation revisited

International audienc

Response-function analysis of n + - n - n + diode generators

International audienc