Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime

We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental data for the longitudinal conductivity at zero magnetic field to the theory of interaction-induced corrections to th transport coefficients. In the temperature range from 10 K up to (45-60) K, wich covers the ballistic interaction regimes for our samples, a rather good agreement between the theory and our experimental results has been found

Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe

We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated by an applied gate voltage $V_g$. This large overlap manifests itself in a much higher critical field $B_c$ separating the range above it where the quantum peculiarities shift linearly with $V_g$ and the range below with a complicated behavior. In the latter case the $N$-shaped and double-$N$-shaped structures in the Hall magnetoresistance $\rho_{xy}(B)$ are observed with their scale in field pronouncedly enlarged as compared to the pictures observed in an analogous single QW. The coexisting electrons and holes were found in the whole investigated range of positive and negative $V_g$ as revealed from fits to the low-field $N$-shaped $\rho_{xy}(B)$ and from the Fourier analysis of oscillations in $\rho_{xx}(B)$. A peculiar feature here is that the found electron density $n$ remains almost constant in the whole range of investigated $V_g$ while the hole density $p$ drops down from the value a factor of 6 larger than $n$ at extreme negative $V_g$ to almost zero at extreme positive $V_g$ passing through the charge neutrality point. We show that this difference between $n$ and $p$ stems from an order of magnitude larger density of states for holes in the lateral valence band maxima than for electrons in the conduction band minimum. We interpret the observed reentrant sign-alternating $\rho_{xy}(B)$ between electronic and hole conductivities and its zero resistivity state in the quantum Hall range of fields on the basis of a calculated picture of magnetic levels in a DQW.Comment: 15 pages, 13 figure

Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells

Longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances are experimentally investigated as a function of in-plane and transverse magnetic fields in n-InGaAs/GaAs nanostructures with strongly-coupled double quantum wells in the temperature range T = 1.8-70 K and magnetic fields B = 0-9.0 T. Experimental data on the temperature dependence of quantum lifetime in diffusive (kBT/τtr ≪ 1) and ballistic (kBT/τtr ≫ 1) regimes are reported. It has been found that in the ballistic regime in the temperature range where kBT/EF < 0.1, the observed quadratic temperature dependence of quantum lifetime is determined by inelastic electron-electron scattering. However, the temperature dependence of quantum lifetime cannot be quantitatively described by the existing theories in the whole temperature range. © 2013 American Institute of Physics