Spin injection in Silicon at zero magnetic field

In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electrons spin polarization is then analysed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field \textit{i.e.} in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3 % at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.Comment: accepted in AP

Spectral Properties of the Chalker-Coddington Network

We numerically investigate the spectral statistics of pseudo-energies for the unitary network operator U of the Chalker--Coddington network. The shape of the level spacing distribution as well the scaling of its moments is compared to known results for quantum Hall systems. We also discuss the influence of multifractality on the tail of the spacing distribution.Comment: JPSJ-style, 7 pages, 4 Postscript figures, to be published in J. Phys. Soc. Jp