116 research outputs found
Theory of enhancement of thermoelectric properties of materials with nanoinclusions
Based on the concept of band bending at metal/semiconductor interfaces as an
energy filter for electrons, we present a theory for the enhancement of the
thermoelectric properties of semiconductor materials with metallic
nanoinclusions. We show that the Seebeck coefficient can be significantly
increased due to a strongly energy-dependent electronic scattering time. By
including phonon scattering, we find that the enhancement of ZT due to electron
scattering is important for high doping, while at low doping it is primarily
due to a decrease in the phonon thermal conductivity
Summing Divergent Perturbative Series in a Strong Coupling Limit. The Gell-Mann - Low Function of the \phi^4 Theory
An algorithm is proposed for determining asymptotics of the sum of a
perturbative series in the strong coupling limit using given values of the
expansion coefficients. Operation of the algorithm is illustrated by test
examples, method for estimating errors is developed, and an optimization
procedure is described. Application of the algorithm to the theory
gives a behavior at large for its Gell-Mann
-- Low function. The fact that the exponent is close to unity can be
interpreted as a manifestation of the logarithmic branching of the type
(with ), which is
confirmed by independent evidence. In any case, the theory is
internally consistent. The procedure of summing perturbartive series with
arbitrary values of expansion parameter is discussed.Comment: 23 pages, PD
High orders of perturbation theory: are renormalons significant?
According to Lipatov, the high orders of perturbation theory are determined
by saddle-point configurations (instantons) of the corresponding functional
integrals. According to t'Hooft, some individual large diagrams, renormalons,
are also significant and they are not contained in the Lipatov contribution.
The history of the conception of renormalons is presented, and the arguments in
favor of and against their significance are discussed. The analytic properties
of the Borel transforms of functional integrals, Green functions, vertex parts,
and scaling functions are investigated in the case of \phi^4 theory. Their
analyticity in a complex plane with a cut from the first instanton singularity
to infinity (the Le Guillou - Zinn-Justin hypothesis) is proved. It rules out
the existence of the renormalon singularities pointed out by t'Hooft and
demonstrates the nonconstructiveness of the conception of renormalons as a
whole. The results can be interpreted as an indication of the internal
consistency of \phi^4 theory.Comment: 28 pages, 8 figures include
Divergent Perturbation Series
Various perturbation series are factorially divergent. The behavior of their
high-order terms can be found by Lipatov's method, according to which they are
determined by the saddle-point configurations (instantons) of appropriate
functional integrals. When the Lipatov asymptotics is known and several lowest
order terms of the perturbation series are found by direct calculation of
diagrams, one can gain insight into the behavior of the remaining terms of the
series. Summing it, one can solve (in a certain approximation) various
strong-coupling problems. This approach is demonstrated by determining the
Gell-Mann - Low functions in \phi^4 theory, QED, and QCD for arbitrary coupling
constants. An overview of the mathematical theory of divergent series is
presented, and interpretation of perturbation series is discussed. Explicit
derivations of the Lipatov asymptotic forms are presented for some basic
problems in theoretical physics. A solution is proposed to the problem of
renormalon contributions, which hampered progress in this field in the late
1970s. Practical schemes for summation of perturbation series are described for
a coupling constant of order unity and in the strong-coupling limit. An
interpretation of the Borel integral is given for 'non-Borel-summable' series.
High-order corrections to the Lipatov asymptotics are discussed.Comment: Review article, 45 pages, PD
A New Approach to Solve the Low-lying States of the Schroedinger Equation
We review a new iterative procedure to solve the low-lying states of the
Schroedinger equation, done in collaboration with Richard Friedberg. For the
groundstate energy, the order iterative energy is bounded by a finite
limit, independent of ; thereby it avoids some of the inherent difficulties
faced by the usual perturbative series expansions. For a fairly large class of
problems, this new procedure can be proved to give convergent iterative
solutions. These convergent solutions include the long standing difficult
problem of a quartic potential with either symmetric or asymmetric minima.Comment: 54 pages, 3 figures given separatel
Structure of High Order Corrections to Lipatov's Asymptotics
High orders of perturbation theory can be calculated by the Lipatov method,
whereby they are determined by saddle-point configurations (instantons) of the
corresponding functional integrals. For most field theories, the Lipatov
asymptotics has the functional form c a^N \Gamma(N+b) (N is the order of
perturbation theory), and the relative corrections to it have a form of a
series in powers of 1/N. It is shown that this series diverges factorially and
its high-order coefficients can be calculated using a procedure similar to
Lipatov's one. The K-th expansion coefficient has the form
const(\ln(S1/S0))^{-K}\Gamma(K+(r1-r0)/2), where S0 and S1 are the values of
the action for the first and the second instanton of the field theory under
consideration, while r0 and r1 are the corresponding numbers of zero modes. The
instantons satisfy the same equation as in the Lipatov method and are assumed
to be renumbered in order of increasing of their action. This result has the
universal character and is valid in any field theory for which the Lipatov
asymptotic form is as specified above.Comment: 8 pages, p
2.4 Micrometer Cutoff Wavelength AlGaAsSb/InGaAsSb Phototransistors
We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C)
Electronic Structure Calculation by First Principles for Strongly Correlated Electron Systems
Recent trends of ab initio studies and progress in methodologies for
electronic structure calculations of strongly correlated electron systems are
discussed. The interest for developing efficient methods is motivated by recent
discoveries and characterizations of strongly correlated electron materials and
by requirements for understanding mechanisms of intriguing phenomena beyond a
single-particle picture. A three-stage scheme is developed as renormalized
multi-scale solvers (RMS) utilizing the hierarchical electronic structure in
the energy space. It provides us with an ab initio downfolding of the global
band structure into low-energy effective models followed by low-energy solvers
for the models. The RMS method is illustrated with examples of several
materials. In particular, we overview cases such as dynamics of semiconductors,
transition metals and its compounds including iron-based superconductors and
perovskite oxides, as well as organic conductors of kappa-ET type.Comment: 44 pages including 38 figures, to appear in J. Phys. Soc. Jpn. as an
invited review pape
Dynamical mean-field approach to materials with strong electronic correlations
We review recent results on the properties of materials with correlated
electrons obtained within the LDA+DMFT approach, a combination of a
conventional band structure approach based on the local density approximation
(LDA) and the dynamical mean-field theory (DMFT). The application to four
outstanding problems in this field is discussed: (i) we compute the full
valence band structure of the charge-transfer insulator NiO by explicitly
including the p-d hybridization, (ii) we explain the origin for the
simultaneously occuring metal-insulator transition and collapse of the magnetic
moment in MnO and Fe2O3, (iii) we describe a novel GGA+DMFT scheme in terms of
plane-wave pseudopotentials which allows us to compute the orbital order and
cooperative Jahn-Teller distortion in KCuF3 and LaMnO3, and (iv) we provide a
general explanation for the appearance of kinks in the effective dispersion of
correlated electrons in systems with a pronounced three-peak spectral function
without having to resort to the coupling of electrons to bosonic excitations.
These results provide a considerable progress in the fully microscopic
investigations of correlated electron materials.Comment: 24 pages, 14 figures, final version, submitted to Eur. Phys. J. for
publication in the Special Topics volume "Cooperative Phenomena in Solids:
Metal-Insulator Transitions and Ordering of Microscopic Degrees of Freedom
Crystallographic Snapshots of Tyrosine Phenol-lyase Show That Substrate Strain Plays a Role in CâC Bond Cleavage
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