30 research outputs found
Substrate Effect on the High Temperature Oxidation Behavior of a Pt-modified Aluminide Coating. Part II: Long-term Cyclic-oxidation Tests at 1,050 C
This second part of a two-part study is devoted to the effect of the substrate on the long-term, cyclic-oxidation behavior at 1,050 C of RT22 industrial coating deposited on three Ni-base superalloys (CMSX-4, SCB, and IN792). Cyclicoxidation tests at 1,050 C were performed for up to 58 cycles of 300 h (i.e., 17,400 h of heating at 1,050 C). For such test conditions, interdiffusion between the coating and its substrate plays a larger role in the damage process of the system than during isothermal tests at 900, 1,050, and 1,150 C for 100 h and cyclicoxidation tests at 900 C which were reported in part I [N. Vialas and D. Monceau,
Oxidation of Metals 66, 155 (2006)]. The results reported in the present paper show that interdiffusion has an important effect on long-term, cyclic-oxidation resistance, so that clear differences can be observed between different superalloys protected with the same aluminide coating. Net-mass-change (NMC) curves show the better cyclic-oxidation behavior of the RT22/IN792 system whereas uncoated CMSX-4 has the best cyclic-oxidation resistance among the three superalloys studied. The importance of the interactions between the superalloy substrate and its coating is then demonstrated. The effect of the substrate on cyclic-oxidation behavior is related to the extent of oxide scale spalling and to the evolution of microstructural
features of the coatings tested. SEM examinations of coating surfaces and cross sections show that spalling on RT22/CMSX-4 and RT22/SCB was favored by the presence of deep voids localized at the coating/oxide interface. Some of these voids can act as nucleation sites for scale spallation. The formation of such interfacial
voids was always observed when the b to c0 transformation leads to the formation of a two-phase b/c0 layer in contact with the alumina scale. On the contrary, no voids
were observed in RT22/IN792, since this b to c0 transformation occurs gradually by an inward transformation of b leading to the formation of a continuous layer of c0
phase, parallel to the metal/scale interface
Candida albicans cell shaving uncovers new proteins involved in cell wall integrity, yeast to hypha transition, stress response and host–pathogen interaction
A New Cationic Porphyrin Derivative (TMPipEOPP) with Large Side Arm Substituents: A Highly Selective G-Quadruplex Optical Probe
The discovery of uncommon DNA structures and speculation about their potential functions in genes has brought attention to specific DNA structure recognition. G-quadruplexes are four-stranded nucleic acid structures formed by G-rich DNA (or RNA) sequences. G-rich sequences with a high potential to form G-quadruplexes have been found in many important genomic regions. Porphyrin derivatives with cationic side arm substituents are important G-quadruplex-binding ligands. For example, 5,10,15,20-Tetrakis(N-methylpyridinium-4-yl)-21H,23H-porphyrin (TMPyP4), interacts strongly with G-quadruplexes, but has poor selectivity for G-quadruplex versus duplex DNA. To increase the G-quadruplex recognition specificity, a new cationic porphyrin derivative, 5,10,15,20-tetra-{4-[2-(1-methyl-1- piperidinyl)ethoxy]phenyl} porphyrin (TMPipEOPP), with large side arm substituents was synthesized, and the interactions between TMPipEOPP and different DNA structures were compared. The results show that G-quadruplexes cause large changes in the UV-Vis absorption and fluorescence spectra of TMPipEOPP, but duplex and single-stranded DNAs do not, indicating that TMPipEOPP can be developed as a highly specific optical probe for discriminating G-quadruplex from duplex and single-stranded DNA. Visual discrimination is also possible. Job plot and Scatchard analysis suggest that a complicated binding interaction occurs between TMPipEOPP and G-quadruplexes. At a low [G-quadruplex]/[TMPipEOPP] ratio, one G-quadruplex binds two TMPipEOPP molecules by end-stacking and outside binding modes. At a high [G-quadruplex]/[TMPipEOPP] ratio, two G-quadruplexes bind to one TMPipEOPP molecule in a sandwich-like end-stacking mode
Solvent Effects on Ionization Potentials of Guanine Runs and Chemically Modified Guanine in Duplex DNA: Effect of Electrostatic Interaction and Its Reduction due to Solvent
We examined the ionization potential (IP) corresponding to the free energy of a hole on duplex DNA by semiempirical molecular orbital theory with a continuum solvent model. As for the contiguous guanines (a guanine run), we found that the IP in the gas phase significantly decreases with the increasing number of nucleotide pairs of the guanine run, whereas the IP in water (OP, oxidation potential) only slightly does. The latter result is consistent with the experimental result for DNA oligomers in water. This decrease in the IP is mainly due to the attractive electrostatic interaction between the hole and a nucleotide pair in the duplex DNA. This interaction is reduced in water, which results in the small decrease in the IP in water. This mechanism explains the discrepancy between the experimental result and the previous computational results obtained by neglecting the solvent. As for the chemically modified guanine, the previous work showed that the removal of some solvent (water) molecules due to the attachment of a neutral functional group to a guanine in a duplex DNA stabilizes the hole on the guanine. One might naively have expected the opposite case, since a polar solvent usually stabilizes ions. This mechanism also explains this unexpected stabilization of a hole as follows. When some water molecules are removed, the attractive electrostatic interaction stabilizing the hole increases, and thus, the hole is stabilized. In order to design the hole energetics by a chemical modification of DNA, this mechanism has to be taken into account and can be used. 1
The pH-Dependent Role of Superoxide in Riboflavin-Catalyzed Photooxidation of 8-Oxo-7,8-dihydroguanosine
Analyse et conception orientee objet d'un logiciel de simulation pour le calcul des couts de production et l'analyse du reseau
Available at INIST (FR), Document Supply Service, under shelf-number : 26165 B, issue : a.1996 n.83 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueSIGLEFRFranc