Wafer-scale nanofabrication of telecom single-photon emitters in silicon

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing

Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently limits its scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by nearly two orders of magnitude, approaching the fundamental $T_1$ relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures

Ionization of iridium ions in the Dresden EBIT studied by X-ray spectroscopy of direct excitation and radiative recombination processes

Ir$^{q+}$ ($41\le q \le 64$) ions with open-shell configurations have been produced in the electron beam of the room-temperature Dresden Electron Beam Ion Trap (Dresden EBIT) at electron excitation energies from 2 keV to 13 keV. X-ray emission from direct excitation processes and radiative capture in krypton-like to aluminium-like iridium ions is measured with an energy dispersive Si(Li) detector. The detected X-ray lines are analyzed and compared with results from multiconfigurational Dirac-Fock (MCDF) atomic structure calculations. This allows to determine dominant produced ion charge states at different electron energies. The analysis shows that at the realized working gas pressure of $5\times 10^{-9}$mbar for higher charged ions the maximum ion charge state is not preferently determined by the chosen electron beam energy needed for ionization of certain atomic substates, but by the balance between ionization and charge state reducing processes as charge exchange and radiative recombination. This behaviour is also discussed on the basis of model calculations for the resulting ion charge state distribution

Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing

Abstract Negatively-charged boron vacancy centers ( $${{V}_{B}}^{-}$$ V B − ) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T 1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect radiofrequency signals with sub-Hz resolution. The corresponding sensitivity is benchmarked against that of state-of-the-art NV-diamond quantum sensors. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures