Electron-Shading Characterization in a HDP Contact Etching Process Using a Patterned CHARM Wafer

In this work, a CHARM-2 wafer with high aspect ratio resist patterns has been used to quantitatively I. Introduction To understand the origin of plasma-induced damage, useful plasma parameters such as floating potentials and J-V characteristics can be measured using the non-invasive CHARM method To study this effect, we have designed different resist patterns on a 200 mm CHARM™-2 wafer with an e-beam lithography. This allows to obtain realistic variable aspect ratio as high as 4, contrary to previous studie

Sidewall Modification of Porous SiOCH Induced by Etching and Post Etching Plasma Treatments

International audienc

In situ post etch treatment as solution to improve defect density for porous Low-k integration using metallic hard mask

International audienc