Effects on Service Improvement of Transport in view of urban sustainability

In these years, the urban planning system has been reconsidered in terms of sustainable policies. The sustainability in urban areas involves attempts of urban development including environmental, social and economic improvements, policies and practices in the next generation stage. In most of Japanese cities and towns, transport planning was based on the efficiency of car vehicles use until now. 　As a result, traffic congestion occurred and caused slower speeds, longer times of car vehicles in a downtown area, while car drivers used the car vehicles even for walking distance. Therefore, it is necessary for the cities to improve the transport service in their areas including walking, cycling, and public transit oriented system and so on. These modes contribute to the urban sustainability positively and correspond to the appropriate mobility of the people. In this study, first of all, the effect on the introduction of a new public transport system, namely, an extension of tram car system was examined. Here, the impacts on surrounding areas due to tram line extension are assessed in view of the sustainable urban planning. In the next objective, the effects on the improvement of an underground passage, which is more convenient for pedestrian to go around the downtown area, were evaluated. The practical research and study was examined in Sapporo City, Japan. The results of analysis show in the following aspects: 1) the inhabitants expects the extension of tramcar in the supposed area, 2) people also expect activeness and attractiveness resulted from the extension of tram car line, 3) the pedestrians expect to be capable more choice of shop facilities, particularly, in rainy or snowy weather due to the use of underground passage, 4) the underground passage stimulates the behaviors of visitors between two commercial areas which exist separately to stay and enjoy for longer time.

nardilysinをコードするNRD1は、MMP2およびMMP3を介して食道がんの浸潤を促進させる

Esophageal squamous cell carcinoma (ESCC) is one of the most common malignancies worldwide. In the present study, to identify novel prognostic markers or therapeutic targets for ESCC, we reviewed a list of genes with upregulated expression in ESCC compared with normal esophagus, as identified by our serial analysis of gene expression (SAGE) analysis. We focused on the NRD1 gene, which encodes the nardilysin protein. Quantitative reverse transcription-polymerase chain reaction (qRT-PCR) in 34 ESCC tissue samples revealed that mRNA expression of NRD1 was upregulated in 56% of ESCC tissue samples. Immunohistochemical analysis of nardilysin in 109 ESCC tissue samples demonstrated that 43 (39%) ESCC cases were positive for nardilysin. Nardilysin-positive ESCC cases were more advanced in terms of T classification (P = 0.0007), N classification (P = 0.0164), and tumor stage (P < 0.0001) than nardilysin-negative ESCC cases. Furthermore, nardilysin expression was significantly associated with poorer prognosis (P = 0.0258). Univariate and multivariate analyses revealed that nardilysin expression is an independent prognostic classifier of patients with ESCC. The invasiveness of NRD1-knockdown TE1 and TE5 esophageal cancer cell lines was less than that of the negative control siRNA-transfected cell lines. Expression of MMP2 and MMP3 mRNA was significantly lower in NRD1-knockdown TE5 cells than in negative control siRNA-transfected cells. These results suggest that nardilysin is involved in tumor progression, and is an independent prognostic classifier in patients with ESCC.広島大学(Hiroshima University)博士(医学)Philosophy in Medical Sciencedoctora

Invited; Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric devices

Interest in transistor-based ferroelectric memory (FeFET) using ferroelectric HfO2[1] as a candidate for nextgeneration memory devices has been growing, and FeFETs with a three-dimensional stacked structure (3DFeFET) have been proposed[2]. Recently, amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O have been mentioned as a candidate channel material, and it is expected to suppress the characteristic degradation caused by the formation of interface layers, which is a problem with Si-based materials [3]. deposition (ALD) technology is required to apply AOS to 3D-FeFETs. Conventional AOS are mainly quaternary, and have been designed for display applications that require low-temperature deposition. Please click Download on the upper right corner to see the full abstract

Oxide thin film transistors for flexible devices

Much attention has been gathered to flexible devices which will surely change our life style drastically. There are many kinds of flexible devices such as flexible display or medical chart. In order to realize the flexible devices, oxide thin film is one of the promising material. Because oxide film has several features which are not observed in conventional silicon materials. They are low fabrication temperature, high electrical performance or unique optical properties. To realize flexible devices with oxide thin film, several key issues should be discussed. In this talk, we will introduce several new techniques which are now being developed in our laboratory. We study the fabrication method of high performance oxide thin film transistors by using solution processed InZnO. High mobility and highly reliable TFT was demonstrated using spin coating method. In this technique, there was a problem of larger fluctuation of the performance. To solve this problem, we introduced wet annealing after the TFT fabrication and achieved very low fluctuation of the electrical performance such as mobility of threshold voltage. We apply this solution processed InZnO to logic circuit such as invertor or ring oscillators. We could demonstrate clear invertor operation or high frequency circuit operations. We demonstrate ELA on a-IGZO TFTs passivated with a hybrid passivation layer (Fig.1). The hybrid passivation layer, based on polysilsesquioxane (PSQ), is transparent and fabricated by solution process. The PSQ passivated a-IGZO TFTs has a bottom gate top contact structure. The channel used is a 70 nm thick a-IGZO (2217) deposited at room temperature by RF magnetron sputtering. Highly doped n-type Si with 100 nm thermally oxidized SiO2 layer were used as the gate and gate insulator, respectively. A stack of 80 nm Mo and 20 nm Pt deposited by RF magnetron sputtering were used as source/drain electrodes. PSQ passivated TFTs were subjected to either 248 nm KrF ELA or 308 nm XeCl ELA at room temperature and atmospheric pressure. KrF ELA was performed under ambient atmosphere while XeCl ELA was performed under N2 environment. Note that ELA was performed after the passivation coating process. Since the PSQ passivation is transparent, we expect that the incident beam will be absorbed throughout the channel. Irradiating Me 100 samples with 90-110 mJ/cm2 XeCl ELA and Me 60/Ph 40 samples with 80 mJ/cm2 KrF ELA greatly improved the transfer characteristics and mobility (~13-18 cm2/Vs) (Fig.2). Please click Additional Files below to see the full abstract

Solution processed ultrawide bandgap insulator to semiconductor conversion of amorphous gallium oxide via fermi level control

Silicon and more recently wide bandgap (WBG) semiconductor materials have dominated the integrated circuit (IC) and thin-film transistor (TFT) space, respectively. For instance, Si technology is widely used in complementary metal oxide semiconductor (CMOS) architectures and as conventional channel material in TFTs in its amorphous and polycrystalline phases. On the other hand, WBG semiconductors such as amorphous InGaZnO have been recently poised to replace a-Si as the dominant TFT channel material especially in modern displays for their superior mobility, transparency, and low temperature processability. Nevertheless, a shift towards ultrawide bandgap (UWBG) semiconductors which have bandgaps (Eg) larger than 4.0 eV unlocks additional properties such as higher breakdown voltage, excellent transparency at wider wavelength range, and harsh environment resilience [1]. Please click Download on the upper right corner to see the full abstract