Diagnosis and Surveillance of Aortic Root Dilation

Aortic root dilation (AoD) imparts increased risk of aortic complications such as dissection, rupture, and valvular regurgitation. Multiple etiologies of AoD exist, such as Marfan syndrome, bicuspid aortic valve, Ehler-Danlos syndrome, infections, and idiopathic conditions. Due to the variety of clinical conditions that can result in AoD, and the risks associated with worsening AoD, a thorough understanding of the pathophysiology of AoD, noninvasive imaging modalities, and pharmacologic therapies is critical. This chapter will review the various etiologies of AoD, pathophysiological basis of each disease entity, overview of the diagnosis of AoD, noninvasive imaging modalities employed for detection and surveillance, pharmacological therapies used in the prevention and management, and the factors that guide intervention such as surgical repair

InGaAs-based high-performance p-i-n photodiodes

Cataloged from PDF version of article.In this letter, we have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz

High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

Cataloged from PDF version of article.We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemissionphotodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physic

Culex tarsalis is a competent vector species for Cache Valley virus

Background: Cache Valley virus (CVV) is a mosquito-borne orthobunyavirus endemic in North America. The virus is an important agricultural pathogen leading to abortion and embryonic lethality in ruminant species, especially sheep. The importance of CVV in human public health has recently increased because of the report of severe neurotropic diseases. However, mosquito species responsible for transmission of the virus to humans remain to be determined. In this study, vector competence of three Culex species mosquitoes of public health importance, Culex pipiens, Cx. tarsalis and Cx. quinquefasciatus, was determined in order to identify potential bridge vector species responsible for the transmission of CVV from viremic vertebrate hosts to humans. Results: Variation of susceptibility to CVV was observed among selected Culex species mosquitoes tested in this study. Per os infection resulted in the establishment of infection and dissemination in Culex tarsalis, whereas Cx. pipiens and Cx. quinquefasciatus were highly refractory to CVV. Detection of viral RNA in saliva collected from infected Cx. tarsalis provided evidence supporting its role as a competent vector. Conclusions: Our study provided further understanding of the transmission cycles of CVV and identifies Cx. tarsalis as a competent vector

High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current

Cataloged from PDF version of article.Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized to fabricate the devices. The solarblind detectors displayed extremely low dark current values: 30lm diameter devices exhibited leakage current below 3 fA under reverse bias up to 12V. True solar-blind operation was ensured with a sharp cut-off around 266 nm. Peak responsivity of 147mA/W was measured at 256 nm under 20 V reverse bias. A visible rejection more than 4 orders of magnitude was achieved. The thermally-limited detectivity of the devices was calculated as 1.8 · 1013 cmHz1/2W 1 . Temporal pulse response measurements of the solar-blind detectors resulted in fast pulses with high 3-dB bandwidths. The best devices had 53 ps pulse-width and 4.1GHz bandwidth. A bandwidth-efficiency product of 2.9GHz was achieved with the AlGaN Schottky photodiodes. (C) 2004 Elsevier Ltd. All rights reserve

High-speed >90% quantum-efficiency p–i–n photodiodes with a resonance wavelength adjustable in the 795–835 nm range

Cataloged from PDF version of article.We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p–i–nphotodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations. © 1999 American Institute of Physic

High-speed Si resonant cavity enhanced photodetectors and arrays

Over the past decade a new family of optoelectronic devices has emerged whose performance is enhanced by placing the active device structure inside a Fabry–Perot resonantmicrocavity [P. E. Green, IEEE Spectrum 13 (2002)]. The increased optical field allows photodetectors to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. We have demonstrated a variety of resonant cavity enhanced (RCE) photodetectors in compound semiconductors [B. Yang, J. D. Schaub, S. M. Csutak, D. J. Rogers, and J. C. Campbell, IEEE Photonics Technol. Lett. 15, 745 (2003)] and Si [M. K. Emsley, O. I. Dosunmu, and M. S. Ünlü, IEEE J. Selected Topics Quantum Electron. 8, 948 (2002)], operating at optical communication wavelengths ranging from 850 nm to 1550 nm. The focus of this article is on Si photodetectors and arrays. High bandwidth short distance communications standards are being developed based on parallel optical interconnect fiber arrays to meet the needs of increasing data rates of interchip communication in modern computer architecture. To ensure that this standard becomes an attractive option for computer systems, low cost components must be implemented on both the transmitting and receiving end of the fibers. To meet this low cost requirement silicon based receiver circuits are the most viable option, however, high speed, high efficiency siliconphotodetectors present a technical challenge. Commercially reproducible silicon wafers with a high reflectance buried distributed Bragg reflector (DBR) have been designed and fabricated [M. K. Emsley, O. I. Dosunmu, and M. S. Ünlü, IEEE J. Selected Topics Quantum Electron. 8, 948 (2002)]. The substrates consist of a two-period, 90% reflecting, DBR fabricated using a double silicon-on-insulator (SOI) process. Resonant-cavity-enhanced (RCE) Si photodetectors have been fabricated with 40% quantum efficiency at 850 nm and a FWHM of 29 ps suitable for 10 Gbps data communications. Recently, 1×12 photodetector arrays have been fabricated, packaged, and tested with silicon based amplifiers to demonstrate the feasibility of a low cost solution for optical interconnects

Infection and transmission of Cache Valley virus by Aedes albopictus and Aedes aegypti mosquitoes

Background: Cache Valley virus (CVV; Bunyavirales, Peribunyaviridae) is a mosquito-borne arbovirus endemic in North America. Although severe diseases are mainly observed in pregnant ruminants, CVV has also been recognized as a zoonotic pathogen that can cause fatal encephalitis in humans. Human exposures to CVV and its related subtypes occur frequently under different ecological conditions in the New World; however, neurotropic disease is rarely reported. High prevalence rates of neutralizing antibodies have been detected among residents in several Latin American cities. However, zoophilic mosquito species involved in the enzootic transmission are unlikely to be responsible for the transmission leading to human exposures to CVV. Mechanisms that lead to frequent human exposures to CVV remain largely unknown. In this study, competence of two anthropophilic mosquitoes, Aedes albopictus and Ae. aegypti, for CVV was determined using per os infection to determine if these species could play a role in the transmission of CVV in the domestic and peridomestic settings of urban and suburban areas. Results: Aedes albopictus were highly susceptible to CVV whereas infection of Ae. aegypti occurred at a significantly lower frequency. Whilst the dissemination rates of CVV were comparable in the two species, the relatively long period to attain maximal infectious titer in Ae. aegypti demonstrated a significant difference in the replication kinetics of CVV in these species. Detection of viral RNA in saliva suggests that both Ae. albopictus and Ae. aegypti are competent vectors for CVV under laboratory conditions. Conclusions: Differential susceptibility to CVV was observed in Ae. albopictus and Ae. aegypti, reflecting their relatively different capacities for vectoring CVV in nature. The high susceptibility of Ae. albopictus to CVV observed in this study suggests its potential role as an efficient vector for CVV. Complemented by the reports of multiple CVV isolates derived from Ae. albopictus, our finding provides the basis for how the dispersal of Ae. albopictus across the New World may have a significant impact on the transmission and ecology of CVV

High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics