Dynamic selective switching in antiferromagnetically-coupled bilayers close to the spin reorientation transition

We have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters (volume 105: 092408) and may be found at http://scitation.aip.org/content/aip/journal/apl/105/9/10.1063/1.4895032

Racetrack memory based on in-plane-field controlled domain-wall pinning

Magnetic domain wall motion could be the key to the next generation of data storage devices, shift registers without mechanically moving parts. Various concepts of such so-called ‘racetrack memories’ have been developed, but they are usually plagued by the need for high current densities or complex geometrical requirements. We introduce a new device concept, based on the interfacial Dzyaloshinskii-Moriya interaction (DMI), of which the importance in magnetic thin films was recently discovered. In this device the domain walls are moved solely by magnetic fields. Unidirectionality is created utilizing the recent observation that the strength with which a domain wall is pinned at an anisotropy barrier depends on the direction of the in-plane field due to the chiral nature of DMI. We demonstrate proof-of-principle experiments to verify that unidirectional domain-wall motion is achieved and investigate several material stacks for this novel device including a detailed analysis of device performance for consecutive pinning and depinning processes

Canted states in anti-ferromagnetically coupled magnetic bilayers

Bilayer systems of ultra-thin anti-ferromagnetically coupled Co and CoFeB layers have been systematically investigated. The intention was to find systems in which the mag- netization of one of the layers (or both) would be in a canted state, meaning that the magnetization is neither in-plane nor out-of-plane at remanence. We have indeed been successful in obtaining such systems, observing configurations where one layer is out-of- plane and one is canted, and others where one layer is in-plane and one is canted. In this work we will discuss other phenomena that have been observed, such as the presence of an in-plane bias field or the competition between the switching fields of both layers as a function of the sweeping field rate

Controlling the canted state in antiferromagnetically coupled magnetic bilayers close to the spin reorientation transition

Canted magnetization is obtained in ultrathin, antiferromagnetically coupled magnetic bilayers with thicknesses around the spin reorientation transition. The canting angle is controlled by both the magnetic layer thickness and interlayer coupling strength, which are tuned independently. Hysteresis loops are obtained, where magnetization components parallel and transverse to the applied field are measured, and analyzed by comparison to micromagnetic simulations. This enables the canting angle to be extracted and the behavior of the individual layers to be distinguished. Two types of canted systems are obtained with either single-layer reversal or complex, coupled two-layer reversal, under moderate external magnetic fields. Controlling the magnetization canting and reversal behavior of ultra-thin layers is relevant for the development of magnetoresistive random-access memory and spin-torque oscillator devices.This research was funded by the FP7 ERC 3SPIN Advanced Grant and by a European Erasmus Mobility program. This work is part of the research programme of the Foundation for Fundamental Research on Matter (FOM), which is part of the Netherlands Organisation for Scientific Research (NWO). A. Fernández-Pacheco acknowledges support from an EPSRC Early Career Fellowship EP/M008517/1, and from the Winton Foundation

Precession-torque-driven domain-wall in out-of-plane materials

Domain-wall (DW) motion in magnetic nanostrips is intensively studied, in particular because of the possible applications in data storage. In this work, we will investigate a novel method of DW motion using magnetic field pulses, with the precession torque as the driving mechanism. We use a one dimensional (1D) model to show that it is possible to drive DWs in out-of-plane materials using the precession torque, and we identify the key parameters that influence this motion. Because the DW moves back to its initial position at the end of the field pulse, thereby severely complicating direct detection of the DW motion, depinning experiments are used to indirectly observe the effect of the precession torque. The 1D model is extended to include an energy landscape in order to predict the influence of the precession torque in the depinning experiments. Although preliminary experiments did not yet show an effect of the precession torque, our calculations indicate that depinning experiments can be used to demonstrate this novel method of DW motion in out-of-plane materials, which even allows for coherent motion of multiple domains when the Dzyaloshinskii-Moriya interaction is taken into account

Symmetry-breaking interlayer Dzyaloshinskii–Moriya interactions in synthetic antiferromagnets

\u3cp\u3eThe magnetic interfacial Dzyaloshinskii–Moriya interaction (DMI) in multilayered thin films can lead to chiral spin states, which are of paramount importance for future spintronic technologies\u3csup\u3e1,2\u3c/sup\u3e. Interfacial DMI typically manifests as an intralayer interaction, mediated via a paramagnetic heavy metal in systems lacking inversion symmetry\u3csup\u3e3\u3c/sup\u3e. Here we show that, by designing synthetic antiferromagnets with canted magnetization states\u3csup\u3e4,5\u3c/sup\u3e, it is also possible to observe direct evidence of the interfacial interlayer DMI at room temperature. The interlayer DMI breaks the symmetry of the magnetic reversal process via the emergence of non-collinear spin states, which results in chiral exchange-biased hysteresis loops. The spin chiral interlayer interactions reported here are expected to manifest in a range of multilayered thin-film systems, opening up as yet unexplored avenues for the development and exploitation of chiral effects in magnetic heterostructures\u3csup\u3e6–8\u3c/sup\u3e.\u3c/p\u3

Anomalous direction for skyrmion bubble motion

Magnetic skyrmions are localized topological excitations that behave as particles and can be mobile, with great potential for novel data storage devices. In this work, the current-induced dynamics of large skyrmion bubbles is studied. When skyrmion motion in the direction opposite to the electron flow is observed, this is usually interpreted as a perpendicular spin current generated by the spin Hall effect exerting a torque on the chiral N\'{e}el skyrmion. By designing samples in which the direction of the net generated spin current can be carefully controlled, we surprisingly show that skyrmion motion is always against the electron flow, irrespective of the net vertical spin-current direction. We find that a negative bulk spin-transfer torque is the most plausible explanation for the observed results, which is qualitatively justified by a simple model that captures the essential behaviour. These findings demonstrate that claims about the skyrmion chirality based on their current-induced motion should be taken with great caution