Dislocation scattering in a two-dimensional electron gas

A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory.Comment: 6 pages, 3 figure

Antioxidative Defense Responses to lead-induced Oxidative Stress in Glycine max L. CV. Merrill grown in Different pH Gradient

Physiological and biochemical changes as well as the activities of anti-oxidative enzymes under lead (Pb2+) phytotoxicity were investigated in 20 days old soybean (Glycine max L.) seedlings grown hydroponically in the laboratory under different pH conditions. The rapid uptake of Pb 2+ was observed immediately after the start of treatment. The quantity of accumulation of Pb2+ was much higher in roots than in shoots, its level rising with increasing pH from 3.0 to 8.0 . Not only that, an oxidative stress conditions were observed due to increased level of superoxide anion radical and hydrogen peroxide in shoots and root cells of 20 days old seedlings when treated with Pb(NO3)2 at a concentration of 0, 500, 1000 and 2000 μM. Spectrometric assays of seedlings showed increased level of activities of antioxidant enzymes like catalase, peroxidase and glutathione reductase. The presence of thiobarbituric acid reacting substances (TBARS) indicates the enhanced lipid peroxidation compared to controls. The alteration in the activities of the antioxidant enzymes and the induction of lipid peroxidation reflects the presence of Pb2+, which may cause oxidative stress

Current–voltage characteristics of polar heterostructure junctions

We report calculations that show that a metal–polar semiconductor heterostructure can exhibit highly controllable nonlinear current–voltage characteristics. A change in barrier thickness can alter the characteristics from Schottky-like to ohmic in different bias regimes. The origin of these unusual effects is a large electric field (>106 V/cm)(>106 V/cm) and high sheet charge(∼1013–1014cm−2)(∼1013–1014cm−2) without doping, in the polar heterostructure. Theoretical calculation of the tunneling current density in these systems is done in this work. The results indicate that very interesting nonlinear behavior is shown by these systems, even in the undoped case. The choice of suitable compositions of the materials and thicknesses can be used to tailor devices with desired characteristics. © 2002 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71184/2/JAPIAU-91-5-2989-1.pd