A study on technology management process: the parts and components suppliers in the Turkish automotive industry

This paper summarizes part of an empirical study on technology management process in the Turkish automotive parts and components industry. In this study, technology management practices in the Turkish automotive parts and components suppliers' sector are described and evaluated. Practices, techniques, and approaches are proposed to improve the level of technology management so as to turn technology into a competitive weapon. The investigation is organized within the framework of a process model for technology management that consists of technology identification, selection, acquisition, exploitation, protection, and abandonment. A comprehensive questionnaire addressing all phases of this process is developed and the results of 21 companies are presented

Wireless model-based predictive networked control system over cooperative wireless network

Owing to their distributed architecture, networked control systems (NCSs) are proven to be feasible in scenarios where a spatially distributed feedback control system is required. Traditionally, such NCSs operate over real-time wired networks. Recently, in order to achieve the utmost flexibility, scalability, ease of deployment, and maintainability, wireless networks such as IEEE 802.11 wireless local area networks (LANs) are being preferred over dedicated wired networks. However, conventional NCSs with event-triggered controllers and actuators cannot operate over such general purpose wireless networks since the stability of the system is compromised due to unbounded delays and unpredictable packet losses that are typical in the wireless medium. Approaching the wireless networked control problem from two perspectives, this work introduces a practical wireless NCS and an implementation of a cooperative medium access control protocol that work jointly to achieve decent control under severe impairments, such as unbounded delay, bursts of packet loss and ambient wireless traffic. The proposed system is evaluated on a dedicated test platform under numerous scenarios and significant performance gains are observed, making cooperative communications a strong candidate for improving the reliability of industrial wireless networks

Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors

The gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. To develop accurate device models, a reliable measurement methodology is crucial. This article reviews the standard measurement methodology used in the literature and proposes also an additional method, which is evaluated using suitable test structures in a 16 nm FinFET process. The advantages and disadvantages of the two approaches are discussed along with their respective application scenarios

A 216–256 GHz fully differential frequency multiplier-by-8 chain with 0 dBm output power

Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.This work presents a fully differential wideband and low power 240 GHz multiplier-by-8 chain, manufactured in IHP's 130 nm SiGe:C BiCMOS technology with fT/fmax = 300/500 GHz. A single ended 30 GHz input signal is multiplied by 8 using Gilbert cell-based quadrupler and doubler, and then amplified with a wideband differential 3-stage cascode amplifier. To achieve wide bandwidth and optimize for power consumption, the power budget has been designed in order to operate the frequency multipliers and the output amplifier in saturation. With this architecture the presented circuit achieves a 3 dB bandwidth of 40 GHz, meaning a relative 3 dB bandwidth of 17%, and a peak saturated output power of 0 dBm. Harmonic rejections better than 25 dB were measured for the 5th, 6th, and 7th harmonics. It dissipates 255 mW from 3 V supply which results in drain efficiency of 0.4%, while occupying 1.2 mm2. With these characteristics the presented circuit suits very well as a frequency multiplier chain for driving balanced mixers in 240 GHz transceivers for radar, communication, and sensing applications.DFG, 255715243, SPP 1857: Elektromagnetische Sensoren für Life Sciences (ESSENCE

Bırakınız Gitsinler, Bırakınız Savaşsınlar (Laissez Jihad): Kafkasya’dan DAEŞ’e Katılım Nedenleri

Bu araştırmanın amacı Kafkas (Rusya kökenli) militanların, Levant bölgesine göç etmeleri ve DAEŞ’e katılım nedenlerini incelemektir. DAEŞ’e katılım sebepleri, ilgili web kaynaklarının içerik analizi ve ilgili alanyazın incelemesi yapılarak araştırılmıştır. Araştırma aşağıda sayılan altı bulgunun Rusya kökenli savaşçıların DAEŞ’e katılmalarının ardında yatan nedenler olduğunu göstermektedir: (1) Rusya’nın laissez jihad politikası, (2) Çaresizlik hissi ve zor durumda bulunan Müslümanlara yardım etme düşüncesi, (3) Konjonktürel durum ve Lider (Emir) faktörü, (4) Beş yıldızlı cihat aforizması, (5) Sosyal ağlar ve kişisel ilişkiler, (6) Sosyal medya, dijital teknoloji ve propaganda araçlarının aracı (mediatör) etkisi. Araştırma sonuçları ve bulgularının hem kamu otoriteleri tarafından güvenlik politikalarının oluşturulmasına hem de mevcut alan yazına katkı sağlayacağı değerlendirilmektedir

Teknoloji yönetimi süreci üzerine bir çalışma: Türk otomotiv endüstrisi yan sanayii

Türk otomotiv yan sanayiinde teknoloji yönetimi süreci üzerine ampirik bir çalışmanın özeti olan bu makalede, Türk otomotiv yan sanayiindeki teknoloji yönetimi uygulamaları ele alınmış ve değerlendirilmiştir. Teknoloji yönetimi seviyesini yükseltmek için sunulan uygulamaların, teknik ve yaklaşımların temel amacı, teknolojiyi rekabetçi bir silah olarak kullanabilmektir. Bu araştırma, teknoloji yönetiminde süreç modeli çerçevesinde organize edilmiştir. Teknoloji yönetiminde süreç modeli; teknoloji belirlenmesi, seçimi, edinimi, kullanımı, korunumu ve sonlandırılmasını içermektedir. Süreci bütün kısımları ile inceleyen ve 21 şirketi kapsayan bir anket çalışması yapılmış ve sonuçları burada sunulmuştur

Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS

This paper presents a power consumption reduction aspect for a 100-GHz low-noise amplifier. Two designs implemented in 0.13-µm SiGe BiCMOS technology demonstrate state-of-the-art performance, whereas $P_{\mathrm{DC}}$ is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 dB and 16 dB and a noise figure of 4 dB and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is -24.5 dBm and -26.5 dBm, respectively. The occupied IC area in both cases is 0.018 mm$^2$ and 0.014 mm$^2$ excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest

Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS

This paper presents a power consumption reduction aspect for a 100-GHz low-noise amplifier. Two designs implemented in 0.13-µm SiGe BiCMOS technology demonstrate state-of-the-art performance, whereas $P_{\mathrm{DC}}$ is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 dB and 16 dB and a noise figure of 4 dB and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is -24.5 dBm and -26.5 dBm, respectively. The occupied IC area in both cases is 0.018 mm$^2$ and 0.014 mm$^2$ excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest

Paresia transitoria unilateral combinada del nervio hipogloso y del nervio lingual después de la intubación para anestesia

ResumenDurante la anestesia general pueden lesionarse los nervios en la región faringolaríngea. Los nervios más a menudo lesionados son el hipogloso, lingual y laríngeo recurrente. Las lesiones pueden surgir como resultado de varios factores que pueden ser, durante la laringoscopia, intubación endotraqueal e inserción del tubo y por presión del balón, ventilación con mascarilla, maniobra aérea triple, vía aérea orofaríngea, modo de inserción del tubo, posición de la cabeza y del cuello, y aspiración.Las lesiones nerviosas en esa región pueden comprometer un solo nervio aislado o causar la parálisis de 2 nervios en conjunto, como la del nervio laríngeo recurrente hipogloso (síndrome de Tapia). Sin embargo, la lesión combinada de los nervios lingual e hipogloso, después de la intubación para la anestesia, es una condición mucho más rara. El riesgo de una lesión se puede reducir con medidas preventivas. A continuación describimos un caso de paresia unilateral combinada de los nervios hipogloso y lingual después de la intubación para la anestesia