14 research outputs found

    Crystallization of LiAlSiO<sub>4</sub> Glass in Hydrothermal Environments at Gigapascal Pressuresā€“Dense Hydrous Aluminosilicates

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    High-pressure hydrothermal environments can drastically reduce the kinetic constraints of phase transitions and afford high-pressure modifications of oxides at comparatively low temperatures. Under certain circumstances such environments allow access to kinetically favored phases, including hydrous ones with water incorporated as hydroxyl. We studied the crystallization of glass in the presence of a large excess of water in the pressure range of 0.25ā€“10 GPa and at temperatures from 200 to 600 Ā°C. The <i>p</i> and <i>T</i> quenched samples were analyzed by powder X-ray diffraction, scanning electron microscopy, and IR spectroscopy. At pressures of 0.25ā€“2 GPa metastable zeolite Li-ABW and stable Ī±-eucryptite are obtained at low and high temperatures, respectively, with crystal structures based on tetrahedrally coordinated Al and Si atoms. At 5 GPa a new, hydrous phase of LiAlSiO<sub>4</sub>, LiAlSiO<sub>3</sub>(OH)<sub>2</sub> = LiAlSiO<sub>4</sub>Ā·H<sub>2</sub>O, is produced. Its crystal structure was characterized from single-crystal X-ray diffraction data (space group <i>P</i>2<sub>1</sub>/<i>c</i>, <i>a</i> = 9.547(3) ƅ, <i>b</i> = 14.461(5) ƅ, <i>c</i> = 5.062(2) ƅ, Ī² = 104.36(1)Ā°). The monoclinic structure resembles that of Ī±-spodumene (LiAlSi<sub>2</sub>O<sub>6</sub>) and constitutes alternating layers of chains of corner-condensed SiO<sub>4</sub> tetrahedra and chains of edge-sharing AlO<sub>6</sub> octahedra. OH groups are part of the octahedral Al coordination and extend into channels provided within the SiO<sub>4</sub> tetrahedron chain layers. At 10 GPa another hydrous phase of LiAlSiO<sub>4</sub> with presently unknown structure is produced. The formation of hydrous forms of LiAlSiO<sub>4</sub> shows the potential of hydrothermal environments at gigapascal pressures for creating truly new materials. In this particular case it indicates the possibility of generally accessing pyroxene-type aluminosilicates with crystallographic amounts of hydroxyl incorporated. This could also have implications to geosciences by representing a mechanism of water storage and transport in the depths of the Earth

    Single Crystal Growth and Thermodynamic Stability of Li<sub>17</sub>Si<sub>4</sub>

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    Single crystals of Li<sub>17</sub>Si<sub>4</sub> were synthesized from melts Li<sub><i>x</i></sub>Si<sub>100ā€“<i>x</i></sub> (<i>x</i> > 85) at various temperatures and isolated by isothermal centrifugation. Li<sub>17</sub>Si<sub>4</sub> crystallizes in the space group <i>F</i>4Ģ…3<i>m</i> (<i>a</i> = 18.7259(1) ƅ, <i>Z</i> = 20). The highly air and moisture sensitive compound is isotypic with Li<sub>17</sub>Sn<sub>4</sub>. Li<sub>17</sub>Si<sub>4</sub> represents a new compound and thus the lithium-richest phase in the binary system Liā€“Si superseding known Li<sub>21</sub>Si<sub>5</sub> (Li<sub>16.8</sub>Si<sub>4</sub>). As previously shown Li<sub>22</sub>Si<sub>5</sub> (Li<sub>17.6</sub>Si<sub>4</sub>) has been determined incorrectly. The findings are supported by theoretical calculations of the electronic structure, total energies, and structural optimizations using first-principles methods. Results from melt equilibration experiments and differential scanning calorimetry investigations suggest that Li<sub>17</sub>Si<sub>4</sub> decomposes peritectically at 481 Ā± 2 Ā°C to ā€œLi<sub>4</sub>Siā€ and melt. In addition a detailed investigation of the Liā€“Si phase system at the Li-rich side by thermal analysis using differential scanning calorimetry is given

    Single Crystal Growth and Thermodynamic Stability of Li<sub>17</sub>Si<sub>4</sub>

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    Single crystals of Li<sub>17</sub>Si<sub>4</sub> were synthesized from melts Li<sub><i>x</i></sub>Si<sub>100ā€“<i>x</i></sub> (<i>x</i> > 85) at various temperatures and isolated by isothermal centrifugation. Li<sub>17</sub>Si<sub>4</sub> crystallizes in the space group <i>F</i>4Ģ…3<i>m</i> (<i>a</i> = 18.7259(1) ƅ, <i>Z</i> = 20). The highly air and moisture sensitive compound is isotypic with Li<sub>17</sub>Sn<sub>4</sub>. Li<sub>17</sub>Si<sub>4</sub> represents a new compound and thus the lithium-richest phase in the binary system Liā€“Si superseding known Li<sub>21</sub>Si<sub>5</sub> (Li<sub>16.8</sub>Si<sub>4</sub>). As previously shown Li<sub>22</sub>Si<sub>5</sub> (Li<sub>17.6</sub>Si<sub>4</sub>) has been determined incorrectly. The findings are supported by theoretical calculations of the electronic structure, total energies, and structural optimizations using first-principles methods. Results from melt equilibration experiments and differential scanning calorimetry investigations suggest that Li<sub>17</sub>Si<sub>4</sub> decomposes peritectically at 481 Ā± 2 Ā°C to ā€œLi<sub>4</sub>Siā€ and melt. In addition a detailed investigation of the Liā€“Si phase system at the Li-rich side by thermal analysis using differential scanning calorimetry is given

    Revision of the Liā€“Si Phase Diagram: Discovery and Single-Crystal Xā€‘ray Structure Determination of the High-Temperature Phase Li<sub>4.11</sub>Si

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    Silicon has been regarded as a promising anode material for future lithium-ion batteries, and Liā€“Si phases play an important role. A detailed reinvestigation of the Li-rich part of the binary Liā€“Si phase diagram revealed the existence of a new phase, Li<sub>4.106(2)</sub>Si (Li<sub>16.42</sub>Si<sub>4</sub>). Li<sub>16.42</sub>Si<sub>4</sub> forms through the peritectic decomposition of the Li-richest phase Li<sub>17</sub>Si<sub>4</sub> at 481ā€“486 Ā°C and was characterized by single-crystal X-ray diffraction (<i>a</i> = 4.5246(2) ƅ, <i>b</i> = 21.944(1) ƅ, <i>c</i> = 13.2001(6) ƅ, space group <i>Cmcm</i>, <i>Z</i> = 16), differential scanning calorimetry, and theoretical calculations. Li<sub>16.42</sub>Si<sub>4</sub> represents a high-temperature phase that is thermodynamically stable above āˆ¼480 Ā°C and decomposes peritectically at 618 Ā± 2 Ā°C to Li<sub>13</sub>Si<sub>4</sub> and a melt. Li<sub>16.42</sub>Si<sub>4</sub> can be retained at room temperature. The structure consists of 3 and 10 different kinds of Si and Li atoms, respectively. Two Li positions show occupational disorder. Si atoms are well-separated from each other and have only Li atoms as nearest neighbors. This is similar to Li<sub>17</sub>Si<sub>4</sub> and Li<sub>15</sub>Si<sub>4</sub> compositionally embracing Li<sub>16.42</sub>Si<sub>4</sub>. The SiLi<sub><i>n</i></sub> coordination polyhedra in the series Li<sub>15</sub>Si<sub>4</sub>, Li<sub>16.42</sub>Si<sub>4</sub>, and Li<sub>17</sub>Si<sub>4</sub> are compared. Li<sub>15</sub>Si<sub>4</sub> exclusively features coordination numbers of 12, Li<sub>16.42</sub>Si<sub>4</sub> of 12 and 13, and Li<sub>17</sub>Si<sub>4</sub> reveals 13- and 14-coordinated Si atoms. The band structure and density of states of Li<sub>16.42</sub>Si<sub>4</sub> were calculated on the basis of two ordered model structures with nominal compositions Li<sub>16</sub>Si<sub>4</sub> (a hypothetical Zintl phase) and Li<sub>16.5</sub>Si<sub>4</sub>. Both reveal a metallic character that is analogous to Li<sub>17</sub>Si<sub>4</sub>. In contrast, the electronic structure of Li<sub>15</sub>Si<sub>4</sub> is characteristic of a p-doped semiconductor

    Revision of the Liā€“Si Phase Diagram: Discovery and Single-Crystal Xā€‘ray Structure Determination of the High-Temperature Phase Li<sub>4.11</sub>Si

    No full text
    Silicon has been regarded as a promising anode material for future lithium-ion batteries, and Liā€“Si phases play an important role. A detailed reinvestigation of the Li-rich part of the binary Liā€“Si phase diagram revealed the existence of a new phase, Li<sub>4.106(2)</sub>Si (Li<sub>16.42</sub>Si<sub>4</sub>). Li<sub>16.42</sub>Si<sub>4</sub> forms through the peritectic decomposition of the Li-richest phase Li<sub>17</sub>Si<sub>4</sub> at 481ā€“486 Ā°C and was characterized by single-crystal X-ray diffraction (<i>a</i> = 4.5246(2) ƅ, <i>b</i> = 21.944(1) ƅ, <i>c</i> = 13.2001(6) ƅ, space group <i>Cmcm</i>, <i>Z</i> = 16), differential scanning calorimetry, and theoretical calculations. Li<sub>16.42</sub>Si<sub>4</sub> represents a high-temperature phase that is thermodynamically stable above āˆ¼480 Ā°C and decomposes peritectically at 618 Ā± 2 Ā°C to Li<sub>13</sub>Si<sub>4</sub> and a melt. Li<sub>16.42</sub>Si<sub>4</sub> can be retained at room temperature. The structure consists of 3 and 10 different kinds of Si and Li atoms, respectively. Two Li positions show occupational disorder. Si atoms are well-separated from each other and have only Li atoms as nearest neighbors. This is similar to Li<sub>17</sub>Si<sub>4</sub> and Li<sub>15</sub>Si<sub>4</sub> compositionally embracing Li<sub>16.42</sub>Si<sub>4</sub>. The SiLi<sub><i>n</i></sub> coordination polyhedra in the series Li<sub>15</sub>Si<sub>4</sub>, Li<sub>16.42</sub>Si<sub>4</sub>, and Li<sub>17</sub>Si<sub>4</sub> are compared. Li<sub>15</sub>Si<sub>4</sub> exclusively features coordination numbers of 12, Li<sub>16.42</sub>Si<sub>4</sub> of 12 and 13, and Li<sub>17</sub>Si<sub>4</sub> reveals 13- and 14-coordinated Si atoms. The band structure and density of states of Li<sub>16.42</sub>Si<sub>4</sub> were calculated on the basis of two ordered model structures with nominal compositions Li<sub>16</sub>Si<sub>4</sub> (a hypothetical Zintl phase) and Li<sub>16.5</sub>Si<sub>4</sub>. Both reveal a metallic character that is analogous to Li<sub>17</sub>Si<sub>4</sub>. In contrast, the electronic structure of Li<sub>15</sub>Si<sub>4</sub> is characteristic of a p-doped semiconductor

    Revision of the Liā€“Si Phase Diagram: Discovery and Single-Crystal Xā€‘ray Structure Determination of the High-Temperature Phase Li<sub>4.11</sub>Si

    No full text
    Silicon has been regarded as a promising anode material for future lithium-ion batteries, and Liā€“Si phases play an important role. A detailed reinvestigation of the Li-rich part of the binary Liā€“Si phase diagram revealed the existence of a new phase, Li<sub>4.106(2)</sub>Si (Li<sub>16.42</sub>Si<sub>4</sub>). Li<sub>16.42</sub>Si<sub>4</sub> forms through the peritectic decomposition of the Li-richest phase Li<sub>17</sub>Si<sub>4</sub> at 481ā€“486 Ā°C and was characterized by single-crystal X-ray diffraction (<i>a</i> = 4.5246(2) ƅ, <i>b</i> = 21.944(1) ƅ, <i>c</i> = 13.2001(6) ƅ, space group <i>Cmcm</i>, <i>Z</i> = 16), differential scanning calorimetry, and theoretical calculations. Li<sub>16.42</sub>Si<sub>4</sub> represents a high-temperature phase that is thermodynamically stable above āˆ¼480 Ā°C and decomposes peritectically at 618 Ā± 2 Ā°C to Li<sub>13</sub>Si<sub>4</sub> and a melt. Li<sub>16.42</sub>Si<sub>4</sub> can be retained at room temperature. The structure consists of 3 and 10 different kinds of Si and Li atoms, respectively. Two Li positions show occupational disorder. Si atoms are well-separated from each other and have only Li atoms as nearest neighbors. This is similar to Li<sub>17</sub>Si<sub>4</sub> and Li<sub>15</sub>Si<sub>4</sub> compositionally embracing Li<sub>16.42</sub>Si<sub>4</sub>. The SiLi<sub><i>n</i></sub> coordination polyhedra in the series Li<sub>15</sub>Si<sub>4</sub>, Li<sub>16.42</sub>Si<sub>4</sub>, and Li<sub>17</sub>Si<sub>4</sub> are compared. Li<sub>15</sub>Si<sub>4</sub> exclusively features coordination numbers of 12, Li<sub>16.42</sub>Si<sub>4</sub> of 12 and 13, and Li<sub>17</sub>Si<sub>4</sub> reveals 13- and 14-coordinated Si atoms. The band structure and density of states of Li<sub>16.42</sub>Si<sub>4</sub> were calculated on the basis of two ordered model structures with nominal compositions Li<sub>16</sub>Si<sub>4</sub> (a hypothetical Zintl phase) and Li<sub>16.5</sub>Si<sub>4</sub>. Both reveal a metallic character that is analogous to Li<sub>17</sub>Si<sub>4</sub>. In contrast, the electronic structure of Li<sub>15</sub>Si<sub>4</sub> is characteristic of a p-doped semiconductor

    Lithium and Calcium Carbides with Polymeric Carbon Structures

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    We studied the binary carbide systems Li<sub>2</sub>C<sub>2</sub> and CaC<sub>2</sub> at high pressure using an evolutionary and ab initio random structure search methodology for crystal structure prediction. At ambient pressure Li<sub>2</sub>C<sub>2</sub> and CaC<sub>2</sub> represent salt-like acetylides consisting of C<sub>2</sub><sup>2ā€“</sup> dumbbell anions. The systems develop into semimetals (<i>P</i>3Ģ…<i>m</i>1-Li<sub>2</sub>C<sub>2</sub>) and metals (<i>Cmcm</i>-Li<sub>2</sub>C<sub>2</sub>, <i>Cmcm</i>-CaC<sub>2</sub>, and <i>Immm</i>-CaC<sub>2</sub>) with polymeric anions (chains, layers, strands) at moderate pressures (below 20 GPa). <i>Cmcm</i>-CaC<sub>2</sub> is energetically closely competing with the ground state structure. Polyanionic forms of carbon stabilized by electrostatic interactions with surrounding cations add a new feature to carbon chemistry. Semimetallic <i>P</i>3Ģ…<i>m</i>1-Li<sub>2</sub>C<sub>2</sub> displays an electronic structure close to that of graphene. The Ļ€* band, however, is hybridized with Li-sp states and changed into a bonding valence band. Metallic forms are predicted to be superconductors. Calculated critical temperatures may exceed 10 K for equilibrium volume structures

    Dynamics of Pyramidal SiH<sub>3</sub><sup>ā€“</sup> Ions in ASiH<sub>3</sub> (A = K and Rb) Investigated with Quasielastic Neutron Scattering

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    The two alkali silanides ASiH<sub>3</sub> (A = K and Rb) were investigated by means of quasielastic neutron scattering, both below and above the orderā€“disorder phase transition occurring at around 275ā€“300 K. Measurements upon heating show that there is a large change in the dynamics on going through the phase transition, whereas measurements upon cooling reveal a strong hysteresis due to undercooling of the disordered phase. The results show that the dynamics is associated with rotational diffusion of SiH<sub>3</sub><sup>ā€“</sup> anions, adequately modeled by H-jumps among 24 different jump locations radially distributed around the Si atom. The average relaxation time between successive jumps is of the order of subpicoseconds and exhibits a weak temperature dependence with a small difference in activation energy between the two materials, 39(1) meV for KSiH<sub>3</sub> and 33(1) meV for RbSiH<sub>3</sub>. The pronounced SiH<sub>3</sub><sup>ā€“</sup> dynamics explains the high entropy observed in the disordered phase resulting in the low entropy variation for hydrogen absorption/desorption and hence the origin of these materialsā€™ favorable hydrogen storage properties

    Structural and Vibrational Properties of Silyl (SiH<sub>3</sub><sup>ā€“</sup>) Anions in KSiH<sub>3</sub> and RbSiH<sub>3</sub>: New Insight into Siā€“H Interactions

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    The alkali metal silyl hydrides <i>A</i>SiH<sub>3</sub> (<i>A</i> = K, Rb) and their deuteride analogues were prepared from the Zintl phases <i>A</i>Si. The crystal structures of <i>A</i>SiH<sub>3</sub> consist of metal cations and pyramidal SiH<sub>3</sub><sup>ā€“</sup> ions. At room temperature SiH<sub>3</sub><sup>ā€“</sup> moieties are randomly oriented (Ī± modifications). At temperatures below 200 K <i>A</i>SiH<sub>3</sub> exist as ordered low-temperature (Ī²) modifications. Structural and vibrational properties of SiH<sub>3</sub><sup>ā€“</sup> in <i>A</i>SiH<sub>3</sub> were characterized by a combination of neutron total scattering experiments, infrared and Raman spectroscopy, as well as density functional theory calculations. In disordered Ī±-<i>A</i>SiH<sub>3</sub> SiH<sub>3</sub><sup>ā€“</sup> ions relate closely to freely rotating moieties with <i>C</i><sub>3<i>v</i></sub> symmetry (Siā€“H bond length = 1.52 ƅ; Hā€“Siā€“H angle 92.2 Ā°). Observed stretches and bends are at 1909/1903 cm<sup>ā€“1</sup> (Ī½<sub>1</sub>, A<sub>1</sub>), 1883/1872 cm<sup>ā€“1</sup> (Ī½<sub>3</sub>, E), 988/986 cm<sup>ā€“1</sup> (Ī½<sub>4</sub>, E), and 897/894 cm<sup>ā€“1</sup> (Ī½<sub>2</sub>, A<sub>1</sub>) for <i>A</i> = K/Rb. In ordered Ī²-<i>A</i>SiH<sub>3</sub> silyl anions are slightly distorted with respect to their ideal <i>C</i><sub>3<i>v</i></sub> symmetry. Compared to Ī±-<i>A</i>SiH<sub>3</sub> the molar volume is by about 15% smaller and the Siā€“H stretching force constant is reduced by 4%. These peculiarities are attributed to reorientational dynamics of SiH<sub>3</sub><sup>ā€“</sup> anions in Ī±-<i>A</i>SiH<sub>3</sub>. Siā€“H stretching force constants for SiH<sub>3</sub><sup>ā€“</sup> moieties in various environments fall in a range from 1.9 to 2.05 N cm<sup>ā€“1</sup>. These values are considerably smaller compared to silane, SiH<sub>4</sub> (2.77 N cm<sup>ā€“1</sup>). The reason for the drastic reduction of bond strength in SiH<sub>3</sub><sup>ā€“</sup> remains to be explored

    Synthesis, Structure, and Properties of the Electron-Poor IIā€“V Semiconductor ZnAs

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    ZnAs was synthesized at 6 GPa and 1273 K utilizing multianvil high-pressure techniques and structurally characterized by single-crystal and powder X-ray diffraction (space group <i>Pbca</i> (No. 61), <i>a</i> = 5.6768(2) ƅ, <i>b</i> = 7.2796(2) ƅ, <i>c</i> = 7.5593(2) ƅ, <i>Z</i> = 8). The compound is isostructural to ZnSb (CdSb type) and displays multicenter bonded rhomboid rings Zn<sub>2</sub>As<sub>2</sub>, which are connected to each other by classical two-center, two-electron bonds. At ambient pressure ZnAs is metastable with respect to Zn<sub>3</sub>As<sub>2</sub> and ZnAs<sub>2</sub>. When heating at a rate of 10 K/min decomposition takes place at āˆ¼700 K. Diffuse reflectance measurements reveal a band gap of 0.9 eV. Electrical resistivity, thermopower, and thermal conductivity were measured in the temperature range of 2ā€“400 K and compared to thermoelectric ZnSb. The room temperature values of the resistivity and thermopower are āˆ¼1 Ī© cm and +27 Ī¼V/K, respectively. These values are considerably higher and lower, respectively, compared to ZnSb. Above 150 K the thermal conductivity attains low values, around 2 W/mĀ·K, which is similar to that of ZnSb. The heat capacity of ZnAs was measured between 2 and 300 K and partitioned into a Debye and two Einstein contributions with temperatures of Īø<sub>D</sub> = 234 K, Īø<sub>E1</sub> = 95 K, and Īø<sub>E2</sub> = 353 K. Heat capacity and thermal conductivity of ZnSb and ZnAs show very similar features, which possibly relates to their common electron-poor bonding properties
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