23 research outputs found
Li distribution characterization in Li-ion batteries positive electrodes containing LixNi0.8Co0.15Al0.05O2 secondary particles
The elemental distribution of as-received (non-charged) and charged Li-ion battery positive electrodes containing LixNi0.8Co0.15Al0.05O2 (0.75 ? x ? 1.0) microparticles as active material is characterized by combining μ-PIXE and μ-PIGE techniques. PIGE measurements evidence that the Li distribution is inhomogeneous (existence of Li-rich and Li-depleted regions) in as-received electrodes corresponding with the distribution of secondary particles but it is homogeneous within the studied individual secondary micro-particles. The dependence of the Li distribution on electrode thickness and on charging conditions is characterized by measuring the Li distribution maps in specifically fabricated cross-sectional samples. These data show that decreasing the electrode thickness down to 35 μm and charging the batteries at slow rate give rise to more homogeneous Li depth profiles
Absolute Thermoelectric Power of ZrO<SUB>2</SUB>-CaO, -MgO, -Y<SUB>2</SUB>O<SUB>3</SUB> Solid Electrolytes and Liquid PbO-SiO<SUB>2</SUB> System
A DISCUSSION ABOUT EVALUATION METHOD OF MODE I FRACTURE TOUGHNESS PERFORMANCE WITH WOOD FOR STRUCTURAL GLULAM
Simultaneous determination of shear strength and shear modulus in glued-laminated timber using a full-scale shear block specimen
Degradation analysis of a Ni-based layered positive-electrode active material cycled at elevated temperatures studied by scanning transmission electron microscopy and electron energy-loss spectroscopy
Techniques for temperature controlled ion implantation
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison
Techniques for temperature controlled ion implantation
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison