Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

International audienceEffect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10 13 cm-2 with a peak Hall mobility of 42.4 cm 2 .V-1 .s-1. Coulomb scattering as dominant scattering mechanism up to room temperature is demonstrated using temperature dependent MOS-Hall effect characterization