Dynamic Provenance for SPARQL Update

While the Semantic Web currently can exhibit provenance information by using the W3C PROV standards, there is a "missing link" in connecting PROV to storing and querying for dynamic changes to RDF graphs using SPARQL. Solving this problem would be required for such clear use-cases as the creation of version control systems for RDF. While some provenance models and annotation techniques for storing and querying provenance data originally developed with databases or workflows in mind transfer readily to RDF and SPARQL, these techniques do not readily adapt to describing changes in dynamic RDF datasets over time. In this paper we explore how to adapt the dynamic copy-paste provenance model of Buneman et al. [2] to RDF datasets that change over time in response to SPARQL updates, how to represent the resulting provenance records themselves as RDF in a manner compatible with W3C PROV, and how the provenance information can be defined by reinterpreting SPARQL updates. The primary contribution of this paper is a semantic framework that enables the semantics of SPARQL Update to be used as the basis for a 'cut-and-paste' provenance model in a principled manner.Comment: Pre-publication version of ISWC 2014 pape

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

The impact of electron injection from the substrate on the dynamic Ron of GaN-on-Si High Electron Mobility Transistors (HEMTs) has been investigated by means of back-bias transient and vertical leakage measurements and TCAD simulations. A strong correlation between electrons injected from the substrate and on-state drain current transients is demonstrated. Moreover, the contribution of the electron-type traps in the buffer layer as opposed to the usually studied hole-like traps to the dynamic Ron is discussed. In particular, the impact of electron-like traps for different levels of substrate leakage current is studied. A TCAD model has been developed and calibrated by taking into account both off-state vertical leakage and on-state drain current transient experimental results. The proposed charge dynamic has also been assessed against state-of-the-art theories. This analysis contributes to a deeper understanding of the complex scenario of different types of traps in the buffer layer of GaN-on-Si devices and highlights the impact that trap-states can have on the on-state and off-state currents

Prospects of high energy density physics research using the CERN super proton synchrotron (SPS)

The Super Proton Synchrotron (SPS) will serve as an injector to the Large Hadron Collider (LHC) at CERN as well as it is used to accelerate and extract proton beams for fixed target experiments. In either case, safety of operation is a very important issue that needs to be carefully addressed. This paper presents detailed numerical simulations of the thermodynamic and hydrodynamic response of solid targets made of copper and tungsten that experience impact of a full SPS beam comprized of 288 bunches of 450 GeV/c protons. These simulations have shown that the material will be seriously damaged if such an accident happens. An interesting outcome of this work is that the SPS can be used to carry out dedicated experiments to study High Energy Density (HED) states in matte

Coulomb plasmas in outer envelopes of neutron stars

Outer envelopes of neutron stars consist mostly of fully ionized, strongly coupled Coulomb plasmas characterized by typical densities about 10^4-10^{11} g/cc and temperatures about 10^4-10^9 K. Many neutron stars possess magnetic fields about 10^{11}-10^{14} G. Here we briefly review recent theoretical advances which allow one to calculate thermodynamic functions and electron transport coefficients for such plasmas with an accuracy required for theoretical interpretation of observations.Comment: 4 pages, 2 figures, latex2e using cpp2e.cls (included). Proc. PNP-10 Workshop, Greifswald, Germany, 4-9 Sept. 2000. Accepted for publication in Contrib. Plasma Phys. 41 (2001) no. 2-

SOI CMOS MEMS infra-red thermal source with carbon nanotubes coating

This abstract presents the development of a Silicon-on-Insulator (SOI) CMOS micro-electro-mechanical (MEMS) micro-hotplate based infra-red (IR) light source employing a vertically aligned multi-walled carbon nanotubes (VAMWCNTs) emission layer. Chips were batch fabricated using a standard SOI CMOS process with tungsten metalization followed by a deep reactive ion etching (DRIE) post-CMOS process. VA-MWCNTs were grown at the chip level with a proven in-situ technique. The CNTs coated devices were compared with uncoated devices. Herein we discuss the device performance in terms of power dissipation, beam collimation, thermal transient times, integrated emitted radiation and emitted radiation spectral profile.</p

An overview of the factors influencing apple cider sensory and microbial quality from raw materials to emerging processing technologies

Given apple, an easily adapted culture, and a large number of apple varieties, the production of apple cider is widespread globally. Through the fermentation process, a series of chemical changes take place depending on the apple juice composition, type of microorganism involved and technology applied. Following both fermentations, alcoholic and malo-lactic, and during maturation, the sensory profile of cider changes. This review summarises the current knowledge about the influence of apple variety and microorganisms involved in cider fermentation on the sensory and volatile profiles of cider. Implications of both Saccharomyces, non-Saccharomyces yeast and lactic acid bacteria, respectively, are discussed. Also are presented the emerging technologies applied to cider processing (pulsed electric field, microwave extraction, enzymatic, ultraviolet and ultrasound treatments, high-pressure and pulsed light processing) and the latest trends for a balanced production in terms of sustainability, authenticity and consumer preferences

Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure

Gallium Nitride on Silicon (GaN-on-Si) devices feature a relatively thick epi buffer layer to release the stress related to the lattice constant mismatch between GaN and Si. The buffer layer is formed by several AlGaN-based transition layers with different Al contents. This work addresses the fundamental question of whether two-dimensional hole gases (2DHGs) exist at those interfaces where the theory predicts a high concentration of a negative fixed charge as a consequence of the discontinuity in polarization between the layers. In this study, we demonstrate that the presence of such 2DHGs is consistent with the measured vertical Capacitance-Votage Profiling (CV) and Technology Caomputer-Aided Design (TCAD) simulation in the whole range of measurable frequencies (10 mHz–1 MHz). N-type compensating background donor included in the epi structure in the simulation deck proves to be crucial to explain the depletion region extension consistent with the CV experimental data. For the standard range of frequencies (1 kHz–1 MHz), there was no indication of the presence of 2DHGs. A set of ultra-low frequency (10 mHz–10 Hz) measurements performed were able to reveal the existence of 2DHGs. The outcome of these ultra-low frequency experiments was matched with TCAD simulations which validated our theory