Enhanced thermoelectric performance of a chalcopyrite compound CuIn3Se5-xTex (x=0~0.5) through crystal structure engineering

In this work the chalcopyrite CuIn3Se5−xTex (x = 0~0.5) with space group through isoelectronic substitution of Te for Se have been prepared, and the crystal structure dilation has been observed with increasing Te content. This substitution allows the anion position displacement ∆u = 0.25-u to be zero at x ≈ 0.15. However, the material at x = 0.1 (∆u = 0.15 × 10−3), which is the critical Te content, presents the best thermoelectric (TE) performance with dimensionless figure of merit ZT = 0.4 at 930 K. As x value increases from 0.1, the quality factor B, which informs about how large a ZT can be expected for any given material, decreases, and the TE performance degrades gradually due to the reduction in nH and enhancement in κL. Combining with the ZTs from several chalcopyrite compounds, it is believable that the best thermoelectric performance can be achieved at a certain ∆u value (∆u ≠ 0) for a specific space group if their crystal structures can be engineered

Slippery questions about complex fluids flowing past solids

Viscous flow is familiar and useful, yet the underlying physics is surprisingly subtle and complex. Recent experiments and simulations show that the textbook assumption of 'no slip at the boundary' can fail greatly when wails are sufficiently smooth, The reasons for this seem to involve materials chemistry interactions that can be controlled-especially wettability and the presence of trace impurities, even of dissolved gases. To discover what boundary condition is appropriate for solving continuum equations requires investigation of microscopic particulars. Here, we draw attention to unresolved topics of investigation and to the potential to capitalize on 'slip at the wall' for purposes of materials engineering