189 research outputs found
Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains
The magnetoresistance (MR) associated with domain boundaries has been
investigated in microfabricated bcc Fe (0.65 to 20 m linewidth) wires with
controlled stripe domains. Domain configurations have been characterized using
magnetic force microscopy. MR measurements as a function of field angle,
temperature and domain configuration are used to estimate MR contributions due
to resistivity anisotropy and domain walls. Evidence is presented that domain
boundaries enhance the conductivity in such microstructures over a broad range
of temperatures (1.5 K to 80 K).Comment: 8 pages, 3 postscript figures, and 2 jpg images (Fig 1 and 2) to
appear in IEEE Transactions on Magnetics (Fall 1998
Domain Wall Resistance based on Landauer's Formula
The scattering of the electron by a domain wall in a nano-wire is calculated
perturbatively to the lowest order. The resistance is calculated by use of
Landauer's formula. The result is shown to agree with the result of the linear
response theory if the equilibrium is assumed in the four-terminal case
Ballistic and diffuse transport through a ferromagnetic domain wall
We study transport through ballistic and diffuse ferromagnetic domain walls
in a two-band Stoner model with a rotating magnetization direction. For a
ballistic domain wall, the change in the conductance due to the domain wall
scattering is obtained from an adiabatic approximation valid when the length of
the domain wall is much longer than the Fermi wavelength. In diffuse systems,
the change in the resistivity is calculated using a diagrammatic technique to
the lowest order in the domain wall scattering and taking into account
spin-dependent scattering lifetimes and screening of the domain wall potential.Comment: 9 pages, 3 figures, to appear in Phys. Rev.
Resistance of a domain wall in the quasiclassical approach
Starting from a simple microscopic model, we have derived a kinetic equation
for the matrix distribution function. We employed this equation to calculate
the conductance in a mesoscopic F'/F/F' structure with a domain wall (DW).
In the limit of a small exchange energy and an abrupt DW, the conductance
of the structure is equal to . Assuming that the scattering times
for electrons with up and down spins are close to each other we show that the
account for a finite width of the DW leads to an increase in this conductance.
We have also calculated the spatial distribution of the electric field in the F
wire. In the opposite limit of large (adiabatic variation of the
magnetization in the DW) the conductance coincides in the main approximation
with the conductance of a single domain structure . The account for rotation of
the magnetization in the DW leads to a negative correction to this conductance.
Our results differ from the results in papers published earlier.Comment: 11 pages; replaced with revised versio
Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires
The effect of domain walls on electron transport has been investigated in
microfabricated Fe wires (0.65 to 20 linewidths) with controlled stripe
domains. Magnetoresistance (MR) measurements as a function of domain wall
density, temperature and the angle of the applied field are used to determine
the low field MR contributions due to conventional sources in ferromagnetic
materials and that due to the erasure of domain walls. A negative domain wall
contribution to the resistivity is found. This result is discussed in light of
a recent theoretical study of the effect of domain walls on quantum transport.Comment: 7 pages, 4 postscript figures and 1 jpg image (Fig. 1
Persistent inhibition of pore-based cell migration by sub-toxic doses of miuraenamide, an actin filament stabilizer
Opposed to tubulin-binding agents, actin-binding small molecules have not yet become part of clinical tumor treatment, most likely due to the fear of general cytotoxicity. Addressing this problem, we investigated the long-term efficacy of sub-toxic doses of miuraenamide, an actin filament stabilizing natural compound, on tumor cell (SKOV3) migration. No cytotoxic effects or persistent morphological changes occurred at a concentration of miuraenamide of 20 nM. After 72 h treatment with this concentration, nuclear stiffness was increased, causing reduced migration through pores in a Boyden chamber, while cell migration and chemotaxis per se were unaltered. A concomitant time-resolved proteomic approach showed down regulation of a protein cluster after 56 h treatment. This cluster correlated best with the Wnt signaling pathway. A further analysis of the actin associated MRTF/SRF signaling showed a surprising reduction of SRF-regulated proteins. In contrast to acute effects of actin-binding compounds on actin at high concentrations, long-term low-dose treatment elicits much more subtle but still functionally relevant changes beyond simple destruction of the cytoskeleton. These range from biophysical parameters to regulation of protein expression, and may help to better understand the complex biology of actin, as well as to initiate alternative regimes for the testing of actin-targeting drugs
Reflection of electrons from a domain wall in magnetic nanojunctions
Electronic transport through thin and laterally constrained domain walls in
ferromagnetic nanojunctions is analyzed theoretically. The description is
formulated in the basis of scattering states. The resistance of the domain wall
is calculated in the regime of strong electron reflection from the wall. It is
shown that the corresponding magnetoresistance can be large, which is in a
qualitative agreement with recent experimental observations. We also calculate
the spin current flowing through the wall and the spin polarization of electron
gas due to reflections from the domain wall.Comment: 7 pages, 4 figure
Negative Domain Wall Resistance in Ferromagnets
The electrical resistance of a diffusive ferromagnet with magnetic domain
walls is studied theoretically, taking into account the spatial dependence of
the magnetization. The semiclassical domain wall resistance is found to be
either negative or positive depending on the difference between the
spin-dependent scattering life-times. The predictions can be tested
experimentally by transport studies in doped ferromagnets.Comment: 4 pages, 2 figures, accepted Phys. Rev. Let
Effect of a Domain Wall on the Conductance Quantization in a Ferromagnetic Nanowire
The effect of the domain wall (DW) on the conductance in a ballistic
ferromagnetic nanowire (FMNW) is revisited by exploiting a specific
perturbation theory which is effective for a thin DW; the thinness is often the
case in currently interested conductance measurements on FMNWs. Including the
Hund coupling between carrier spins and local spins in a DW, the conductance of
a FMNW in the presence of a very thin DW is calculated within the
Landauer-B\"{u}ttiker formalism. It is revealed that the conductance plateaus
are modified significantly, and the switching of the quantization unit from
to ``about '' is produced in a FMNW by the introduction of a
thin DW. This accounts well for recent observations in a FMNW.Comment: 5 pages, 2 figures, Corrected typos and added reference
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