655 research outputs found
Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen
intercalation. The hydrogen moves between the 6root3 reconstructed initial
carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial
graphene are covalently bound to this buffer layer, are now saturated by
hydrogen bonds. The buffer layer is turned into a quasi-free standing graphene
monolayer with its typical linear pi-bands. Similarly, epitaxial monolayer
graphene turns into a decoupled bilayer. The intercalation is stable in air and
can be reversed by annealing to around 900 degrees Celsius.Comment: Accepted for publication in Physical Review Letter
Intercalation of graphene on SiC(0001) via ion-implantation
Electronic devices based on graphene technology are catching on rapidly and
the ability to engineer graphene properties at the nanoscale is becoming, more
than ever, indispensable. Here, we present a new procedure of graphene
functionalization on SiC(0001) that paves the way towards the fabrication of
complex graphene electronic chips. The procedure resides on the well-known
ion-implantation technique. The efficiency of the working principle is
demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001)
with Bi atoms, which was not possible following standard procedures. Our
results put forward the ion-beam lithography to nanostructure and functionalize
desired graphene chips
LEED Holography applied to a complex superstructure: a direct view of the adatom cluster on SiC(111)-(3x3)
For the example of the SiC(111)-(3x3) reconstruction we show that a
holographic interpretation of discrete Low Energy Electron Diffraction (LEED)
spot intensities arising from ordered, large unit cell superstructures can give
direct access to the local geometry of a cluster around an elevated atom,
provided there is only one such prominent atom per surface unit cell. By
comparing the holographic images obtained from experimental and calculated data
we illuminate validity, current limits and possible shortcomings of the method.
In particular, we show that periodic vacancies such as cornerholes may inhibit
the correct detection of the atomic positions. By contrast, the extra
diffraction intensity due to slight substrate reconstructions, as for example
buckling, seems to have negligible influence on the images. Due to the spatial
information depth of the method the stacking of the cluster can be imaged down
to the fourth layer. Finally, it is demonstrated how this structural knowledge
of the adcluster geometry can be used to guide the dynamical intensity analysis
subsequent to the holographic reconstruction and necessary to retrieve the full
unit cell structure.Comment: 11 pages RevTex, 6 figures, Phys. Rev. B in pres
Tracking primary thermalization events in graphene with photoemission at extreme timescales
Direct and inverse Auger scattering are amongst the primary processes that
mediate the thermalization of hot carriers in semiconductors. These two
processes involve the annihilation or generation of an electron-hole pair by
exchanging energy with a third carrier, which is either accelerated or
decelerated. Inverse Auger scattering is generally suppressed, as the
decelerated carriers must have excess energies higher than the band gap itself.
In graphene, which is gapless, inverse Auger scattering is instead predicted to
be dominant at the earliest time delays. Here, femtosecond
extreme-ultraviolet pulses are used to detect this imbalance, tracking both the
number of excited electrons and their kinetic energy with time- and
angle-resolved photoemission spectroscopy. Over a time window of approximately
25 fs after absorption of the pump pulse, we observe an increase in conduction
band carrier density and a simultaneous decrease of the average carrier kinetic
energy, revealing that relaxation is in fact dominated by inverse Auger
scattering. Measurements of carrier scattering at extreme timescales by
photoemission will serve as a guide to ultrafast control of electronic
properties in solids for PetaHertz electronics.Comment: 16 pages, 8 figure
Holographic Image Reconstruction from Electron Diffraction Intensities of Ordered Superstructures
We report on a novel holographic reconstruction of well resolved atomic images from discrete spot intensities appearing in low-energy electron diffraction (LEED) from crystalline surfaces. This opens holographic LEED to the wide field of ordered systems giving access to rather complex surface structures
Graphene formed on SiC under various environments: Comparison of Si-face and C-face
The morphology of graphene on SiC {0001} surfaces formed in various
environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4
Torr of disilane is studied by atomic force microscopy, low-energy electron
microscopy, and Raman spectroscopy. The graphene is formed by heating the
surface to 1100 - 1600 C, which causes preferential sublimation of the Si
atoms. The argon atmosphere or the background of disilane decreases the
sublimation rate so that a higher graphitization temperature is required, thus
improving the morphology of the films. For the (0001) surface, large areas of
monolayer-thick graphene are formed in this way, with the size of these areas
depending on the miscut of the sample. Results on the (000-1) surface are more
complex. This surface graphitizes at a lower temperature than for the (0001)
surface and consequently the growth is more three-dimensional. In an atmosphere
of argon the morphology becomes even worse, with the surface displaying
markedly inhomogeneous nucleation, an effect attributed to unintentional
oxidation of the surface during graphitization. Use of a disilane environment
for the (000-1) surface is found to produce improved morphology, with
relatively large areas of monolayer-thick graphene.Comment: 22 pages, 11 figures, Proceedings of STEG-2 Conference; eliminated
Figs. 4 and 7 from version 1, for brevity, and added Refs. 18, 29, 30, 31
together with associated discussio
Enhanced electron-phonon coupling in graphene with periodically distorted lattice
Electron-phonon coupling directly determines the stability of cooperative
order in solids, including superconductivity, charge and spin density waves.
Therefore, the ability to enhance or reduce electron-phonon coupling by optical
driving may open up new possibilities to steer materials' functionalities,
potentially at high speeds. Here we explore the response of bilayer graphene to
dynamical modulation of the lattice, achieved by driving optically-active
in-plane bond stretching vibrations with femtosecond mid-infrared pulses. The
driven state is studied by two different ultrafast spectroscopic techniques.
Firstly, TeraHertz time-domain spectroscopy reveals that the Drude scattering
rate decreases upon driving. Secondly, the relaxation rate of hot
quasi-particles, as measured by time- and angle-resolved photoemission
spectroscopy, increases. These two independent observations are quantitatively
consistent with one another and can be explained by a transient three-fold
enhancement of the electron-phonon coupling constant. The findings reported
here provide useful perspective for related experiments, which reported the
enhancement of superconductivity in alkali-doped fullerites when a similar
phonon mode was driven.Comment: 12 pages, 4 figure
Deterministic direct growth of WS2 on CVD graphene arrays
The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In this work, we report the direct growth of monolayer WS2 via chemical vapor deposition (CVD) on single-crystal graphene arrays on SiO2. Remarkably, spectroscopic and microscopic characterization reveals that WS2 grows only on top of the graphene crystals so that the vertical heterostack is selectively obtained in a bottom-up fashion. Spectroscopic characterization indicates that, after WS2 synthesis, graphene undergoes compressive strain and hole doping. Tailored experiments show that such hole doping is caused by the modification of the SiO2 stoichiometry at the graphene/SiO2 interface during the WS2 growth. Electrical transport measurements reveal that the heterostructure behaves like an electron-blocking layer at large positive gate voltage, which makes it a suitable candidate for the development of unipolar optoelectronic components
Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation
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