Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field

The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization of the carriers shifts down by more than 20 T as the electron density is reduced, consistent with recent theories taking into account the enhancement of the electron-electron interactions at low densities. Nevertheless, the magnetic field for complete polarization, Bp, remains 2-3 times smaller than predicted for a disorder free system. We show, in particular by studying the temperature dependance of Bp to probe the effective size of the Fermi sea, that localization plays an important role in determining the spin polarization of a 2D electron gas.Comment: Published in the Physical Review

Tuning Energy Relaxation along Quantum Hall Channels

The chiral edge channels in the quantum Hall regime are considered ideal ballistic quantum channels, and have quantum information processing potentialities. Here, we demonstrate experimentally, at filling factor 2, the efficient tuning of the energy relaxation that limits quantum coherence and permits the return toward equilibrium. Energy relaxation along an edge channel is controllably enhanced by increasing its transmission toward a floating ohmic contact, in quantitative agreement with predictions. Moreover, by forming a closed inner edge channel loop, we freeze energy exchanges in the outer channel. This result also elucidates the inelastic mechanisms at work at filling factor 2, informing us in particular that those within the outer edge channel are negligible.Comment: 8 pages including supplementary materia

Noise dephasing in the edge states of the Integer Quantum Hall regime

An electronic Mach Zehnder interferometer is used in the integer quantum hall regime at filling factor 2, to study the dephasing of the interferences. This is found to be induced by the electrical noise existing in the edge states capacitively coupled to each others. Electrical shot noise created in one channel leads to phase randomization in the other, which destroys the interference pattern. These findings are extended to the dephasing induced by thermal noise instead of shot noise: it explains the underlying mechanism responsible for the finite temperature coherence time $\tau_\phi(T)$ of the edge states at filling factor 2, measured in a recent experiment. Finally, we present here a theory of the dephasing based on Gaussian noise, which is found in excellent agreement with our experimental results.Comment: ~4 pages, 4 figure

Single hole transistor in a p-Si/SiGe quantum well

A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pronounced Coulomb blockade effects are observed at small coupling of the transistor island to source and drain.Comment: 3 pages, 3 figure

Tuning decoherence with a voltage probe

We present an experiment where we tune the decoherence in a quantum interferometer using one of the simplest object available in the physic of quantum conductors : an ohmic contact. For that purpose, we designed an electronic Mach-Zehnder interferometer which has one of its two arms connected to an ohmic contact through a quantum point contact. At low temperature, we observe quantum interference patterns with a visibility up to 57%. Increasing the connection between one arm of the interferometer to the floating ohmic contact, the voltage probe, reduces quantum interferences as it probes the electron trajectory. This unique experimental realization of a voltage probe works as a trivial which-path detector whose efficiency can be simply tuned by a gate voltage