Efficient switching of Rashba spin splitting in wide modulation-doped quantum wells

We demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well it can be an order of magnitude stronger than for the average uniform electric field. For even smaller asymmetry spin subbands can have wave functions and/or expectation values of the spin direction that are completely changed as the in-plane wave vector varies. The Dresselhaus effect can give an anticrossing at which the spin rapidly flips.Comment: 4 pages, 3 figure

Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells

The effective masses in remote doped Si/Si0.8Ge0.2/Si quantum wells having sheet densities, Ns in the range 2 × 1011–1.1 × 1012 cm – 2 have been determined from the temperature dependencies of the Shubnikov–de Haas oscillations. The values obtained increase with magnetic field and Ns. This behavior is taken as evidence for the nonparabolicity of the valence band and accounts for the discrepancies in previously reported masses. Self-consistent band structure calculations for a triangular confinement of the carriers have also been carried out and provide confirmation of the increase in mass with Ns. Theory and experiment give extrapolated Gamma point effective masses of 0.21 and 0.20 of the free-electron mass, respectively

Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells

We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms in a multiband approach rather than the commonly used Rashba term dependent on k and electric field. It is pointed out that the expectation value of the electric field in a subband is sometimes not unique because the expectation values can even have opposite signs for the spin-split subband components. Symmetric quantum wells with Dresselhaus terms and the influence of the interfaces on the spin splitting are also discussed. We apply a well established multiband approach to wide modulation-doped InGaSb quantum wells with strong built-in electric fields in the interface regions. We demonstrate an efficient mechanism for switching on and off the Rashba splitting with an electric field being an order of magnitude smaller than the local built-in field that determines the Rashba splitting. The implications of our findings for spintronic devices, in particular the Datta-Das spin transistor and proposed modifications of it, are discussed.Comment: Modified version, now published. 10 pages, 3 figures, 2 table

Modulated Rashba interaction in a quantum wire: Spin and charge dynamics

It was recently shown that a spatially modulated Rashba spin-orbit coupling in a quantum wire drives a transition from a metallic to an insulating state when the wave number of the modulation becomes commensurate with the Fermi wave length of the electrons in the wire. It was suggested that the effect may be put to practical use in a future spin transistor design. In the present article we revisit the problem and present a detailed analysis of the underlying physics. First, we explore how the build-up of charge density wave correlations in the quantum wire due to the periodic gate configuration that produces the Rashba modulation influences the transition to the insulating state. The interplay between the modulations of the charge density and that of the spin-orbit coupling turns out to be quite subtle: Depending on the relative phase between the two modulations, the joint action of the Rashba interaction and charge density wave correlations may either enhance or reduce the Rashba current blockade effect. Secondly, we inquire about the role of the Dresselhaus spin-orbit coupling that is generically present in a quantum wire embedded in semiconductor heterostructure. While the Dresselhaus coupling is found to work against the current blockade of the insulating state, the effect is small in most materials. Using an effective field theory approach, we also carry out an analysis of effects from electron- electron interactions, and show how the single-particle gap in the insulating state can be extracted from the more easily accessible collective charge and spin excitation thresholds. The smallness of the single-particle gap together with the anti-phase relation between the Rashba and chemical potential modulations pose serious difficulties for realizing a Rashba-controlled current switch in an InAs-based device. Some alternative designs are discussed.Comment: 20 pages, 6 figure

Terahertz magneto-optical spectroscopy of two-dimensional hole and electron systems

We have used terahertz (THz) magneto-optical spectroscopy to investigate the cyclotron resonance in high mobility two-dimensional electron and hole systems. Our experiments reveal long-lived (~20 ps) coherent oscillations in the measured signal in the presence of a perpendicular magnetic field. The cyclotron frequency extracted from the oscillations varies linearly with magnetic field for a two-dimensional electron gas (2DEG), as expected. However, we find that the complex non-parabolic valence band structure in a two-dimensional hole gas (2DHG) causes the cyclotron frequency and effective mass to vary nonlinearly with the magnetic field, as verified by multiband Landau level calculations. This is the first time that THz magneto-optical spectroscopy has been used to study 2DHG, and we expect that these results will motivate further studies of these unique 2D nanosystems.Comment: 11 pages, 7 figure

Observation of Spin-Orbit Berry's Phase in Magnetoresistance of a Two-Dimensional Hole Anti-dot System

We report observation of spin-orbit Berry's phase in the Aharonov-Bohm (AB) type oscillation of weak field magnetoresistance in an anti-dot lattice (ADL) of a two-dimensional hole system. An AB-type oscillation is superposed on the commensurability peak, and the main peak in the Fourier transform is clearly split up due to variation in Berry's phase originating from the spin-orbit interaction. A simulation considering Berry's phase and the phase arising from the spin-orbit shift in the momentum space shows qualitative agreement with the experiment.Comment: 13 pages, 5 figure

On the exciton binding energy in a quantum well

We consider a model describing the one-dimensional confinement of an exciton in a symmetrical, rectangular quantum-well structure and derive upper and lower bounds for the binding energy $E_b$ of the exciton. Based on these bounds, we study the dependence of $E_b$ on the width of the confining potential with a higher accuracy than previous reports. For an infinitely deep potential the binding energy varies as expected from $1 Ry$ at large widths to $4 Ry$ at small widths. For a finite potential, but without consideration of a mass mismatch or a dielectric mismatch, we substantiate earlier results that the binding energy approaches the value $1 Ry$ for both small and large widths, having a characteristic peak for some intermediate size of the slab. Taking the mismatch into account, this result will in general no longer be true. For the specific case of a $Ga_{1-x}Al_{x}As/GaAs/Ga_{1-x}Al_{x}As$ quantum-well structure, however, and in contrast to previous findings, the peak structure is shown to survive.Comment: 32 pages, ReVTeX, including 9 figure

Anomalous magneto-oscillations in two-dimensional systems

The frequencies of Shubnikov-de Haas oscillations have long been used to measure the unequal population of spin-split two-dimensional subbands in inversion asymmetric systems. We report self-consistent numerical calculations and experimental results which indicate that these oscillations are not simply related to the zero-magnetic-field spin-subband densities.Comment: 4 pages, 3 figures; changed content (clarifications

Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression

Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $\tau_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.Comment: 5 pages, 3 figures. submitted to Phys.Rev.