High field CdS detector for infrared radiation

New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery

Vapor phase growth of group 3, 4, and 5 compounds by HCl transport of elements

Technique has been devised for vapor-phase epitaxial growth of group 3, 4, and 5 binary, ternary, or quaternary compounds by HCl transport of the constituent elements or dopants. Technique uses all the constituents of the alloy system in their elemental form. Transport of these elements by an HCl + H2 carrier gas facilitates their transport as subchlorides

High field CdS detector for infrared radiation

An infrared radiation detector including a cadmium sulfide platelet having a cathode formed on one of its ends and an anode formed on its other end is presented. The platelet is suitably doped such that stationary high-field domains are formed adjacent the cathode when based in the negative differential conductivity region. A negative potential is applied to the cathode such that a high-field domain is formed adjacent to the cathode. A potential measuring probe is located between the cathode and the anode at the edge of the high-field domain and means are provided for measuring the potential at the probe whereby this measurement is indicative of the infrared radiation striking the platelet