27 research outputs found
Cosmic ray acceleration by stellar wind. Simulation for heliosphere
The solar wind deceleration by the interstellar medium may result in the existence of the solar wind terminal shock. In this case a certain fraction of thermal particles after being heated at the shock would obtain enough energy to be injected to the regular acceleration process. An analytical solution for the spectrum in the frame of a simplified model that includes particle acceleration at the shock front and adiabatic cooling inside the stellar wind cavity has been derived. It is shown that the acceleration of the solar wind particles at the solar wind terminal shock is capable of providing the total flux, spectrum and radial gradients of the low-energy protons close to one observed in the interplanetary space
Synthesis, Structure, and Magnetic Properties of an Al2O3/Ge-p/Al2O3/Co Thin-Film System
AbstractβStructural and magnetic measurements are made of an Al2O3/Ge-p/Al2O3/Co thin-film system.
The structure is synthesized via ion-plasma deposition and can be used as a tunnel heterostructure. The
dependences of the magnetic properties of cobalt on the rate of its deposition and the rates of deposition of
preceding layers are established
The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect
CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K
Effect of the Semiconductor Spacer on Positive Exchange Bias in the CoNi/Si/FeNi Three-Layer Structure
Π’Π΅ΠΊΡΡ ΡΡΠ°ΡΡΠΈ Π½Π΅ ΠΏΡΠ±Π»ΠΈΠΊΡΠ΅ΡΡΡ Π² ΠΎΡΠΊΡΡΡΠΎΠΌ Π΄ΠΎΡΡΡΠΏΠ΅ Π² ΡΠΎΠΎΡΠ²Π΅ΡΡΡΠ²ΠΈΠΈ Ρ ΠΏΠΎΠ»ΠΈΡΠΈΠΊΠΎΠΉ ΠΆΡΡΠ½Π°Π»Π°.Films consisting of a hard magnetic ferromagnet CoNi and a soft magnetic ferromagnet FeNi interacting
through a nonmagnetic Si semiconductor spacer are experimentally studied. The temperature and field
dependences of the magnetic properties of film structures with different silicon thicknesses are examined. It
is found that the multilayer structure has the properties inherent in magnetic springs and exhibits positive
exchange bias as a function of the silicon thicknes
The Study of Co-Cu Heterogeneous Alloy Thin Films by NMR Method
Π Π΄Π°Π½Π½ΠΎΠΉ ΡΠ°Π±ΠΎΡΠ΅ ΠΎΠ±ΡΡΠΆΠ΄Π°ΡΡΡΡ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ, ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ ΠΏΡΠΈ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠΈ ΡΡΡΡΠΊΡΡΡΡ ΠΌΠ°Π³Π½ΠΈΡΠ½ΡΡ
ΡΠ»ΠΎΠ΅Π² Π² ΠΌΡΠ»ΡΡΠΈΡΠ»ΠΎΠΉΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
Co/Cu ΡΠΎ ΡΠ²Π΅ΡΡ
ΡΠΎΠ½ΠΊΠΈΠΌΠΈ ΠΌΠ°Π³Π½ΠΈΡΠ½ΡΠΌΠΈ ΡΠ»ΠΎΡΠΌΠΈ, ΠΏΡΠΈΠ³ΠΎΡΠΎΠ²Π»Π΅Π½Π½ΡΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΌΠ°Π³Π½Π΅ΡΡΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΈΠΎΠ½Π½ΠΎ-ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΠ°ΡΠΏΡΠ»Π΅Π½ΠΈΡ, ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π―ΠΠ Π½Π° ΡΠ΄ΡΠ°Ρ
59Co
(ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½Π°Ρ ΡΠΎΠ»ΡΠΈΠ½Π° ΡΠ»ΠΎΡ Co ΡΠΎΡΡΠ°Π²Π»ΡΠ»Π° dCo β 3.5 ΠΈ 4.5A). ΠΠ΅ΡΠΌΠΎΡΡΡ Π½Π° ΡΡΠΎΠ»Ρ ΠΌΠ°Π»ΡΠ΅ Π·Π½Π°-
ΡΠ΅Π½ΠΈΡ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠΉ ΡΠΎΠ»ΡΠΈΠ½Ρ ΡΠ»ΠΎΠ΅Π², Π±ΡΠ»ΠΎ ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½ΠΎ, ΡΡΠΎ ΡΠΏΠ΅ΠΊΡΡΡ Π―ΠΠ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΠ»ΠΈ ΡΠΎΠ±ΠΎΠΉ
ΡΡΠΏΠ΅ΡΠΏΠΎΠ·ΠΈΡΠΈΡ Π΄Π²ΡΡ
ΠΏΠΈΠΊΠΎΠ² Ρ ΡΠ΅Π½ΡΡΠ°Π»ΡΠ½ΡΠΌΠΈ ΡΠ°ΡΡΠΎΡΠ°ΠΌΠΈ f1=190β196ΠΠΡ ΠΈ f2=208β213ΠΠΡ,
ΠΊΠΎΡΠΎΡΡΠ΅, ΠΎΡΠ΅Π²ΠΈΠ΄Π½ΠΎ, ΡΠΎΠΎΡΠ²Π΅ΡΡΡΠ²ΠΎΠ²Π°Π»ΠΈ Π°ΡΠΎΠΌΠ°ΠΌ ΠΊΠΎΠ±Π°Π»ΡΡΠ°, ΠΈΠΌΠ΅ΡΡΠΈΠΌ 0 ΠΈ 1 Π°ΡΠΎΠΌ ΠΌΠ΅Π΄ΠΈ Π² Π±Π»ΠΈΠΆΠ°ΠΉ-
ΡΠ΅ΠΌ ΠΎΠΊΡΡΠΆΠ΅Π½ΠΈΠΈ. ΠΠ°Π½Π½ΡΠΉ ΡΠ°ΠΊΡ ΡΠΊΠ°Π·ΡΠ²Π°Π΅Ρ Π½Π° ΡΠΎ, ΡΡΠΎ ΠΊΠΎΠ±Π°Π»ΡΡ Π³Π»Π°Π²Π½ΡΠΌ ΠΎΠ±ΡΠ°Π·ΠΎΠΌ ΠΎΡΠ³Π°Π½ΠΈΠ·ΡΠ΅ΡΡΡ Π²
ΠΊΡΡΠΏΠ½ΡΠ΅ ΠΊΠ»Π°ΡΡΠ΅ΡΡ, Π²ΠΊΠ»ΡΡΠ°ΡΡΠΈΠ΅ Π±ΠΎΠ»ΡΡΠΎΠ΅ ΡΠΈΡΠ»ΠΎ Π°ΡΠΎΠΌΠΎΠ².In the present work we discuss the structure of magnetic layer in magnetron sputtered Co/Cu multilayers
with ultrathin magnetic layers ( effective layer thicknesses dCo β 3.5 and 4.5A) obtained by means of
59Co NMR method. In spite of such a small effective thicknesses of sputtered layers it has been found that
the NMR spectra are the superposition of two peaks with central frequencies f1=190-196MHz and f2=208-
213MHz which obviously correspond to Co-atoms which have 0 and 1 Cu-atom in the nearest-neighbor
shell indicating that cobalt preferably forms clusters with large number of atoms involved
Solid-state Synthesis of Cobalt Germanides in Epitaxial Ge/Ξ±-Co(001) and Ge/Ξ²-Co(110) Nanofilms
ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Ρ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΠ΅ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΡΠ²ΡΡΠ΄ΠΎΡΠ°Π·Π½ΠΎΠ³ΠΎ ΡΠΈΠ½ΡΠ΅Π·Π° Π³Π΅ΡΠΌΠ°Π½ΠΈΠ΄ΠΎΠ²
ΠΊΠΎΠ±Π°Π»ΡΡΠ° Π² ΡΠΏΠΈΡΠ°ΠΊΡΠΈΠ°Π»ΡΠ½ΡΡ
Ge/Ξ±-Co(001) ΠΈ Ge/Ξ²-Co(110) Π½Π°Π½ΠΎΠΏΠ»Π΅Π½ΠΊΠ°Ρ
. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π΄Π»Ρ ΠΎΠ±Π΅ΠΈΡ
ΠΏΠΎΠ»ΠΈΠΌΠΎΡΡΠ½ΡΡ
ΠΌΠΎΠ΄ΠΈΡΠΈΠΊΠ°ΡΠΈΠΉ ΠΊΠΎΠ±Π°Π»ΡΡΠ° ΡΠ°Π·Π° Co5Ge7 ΡΠΎΡΠΌΠΈΡΡΠ΅ΡΡΡ ΠΏΠ΅ΡΠ²ΠΎΠΉ ΠΏΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ΅ ~275β¦C. Π‘ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠ΅ΠΌ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΡ ΠΎΡΠΆΠΈΠ³Π° ΠΏΡΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ΅ ~300β¦C ΠΎΠ±ΡΠ°Π·ΡΠ΅ΡΡΡ ΡΠ°Π·Π° CoGe2,
ΠΊΠΎΡΠΎΡΠ°Ρ ΡΠ΅Π·ΠΊΠΎ ΡΠΌΠ΅Π½ΡΡΠ°Π΅Ρ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ΅ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΠ΅ ΠΈ Π½Π°ΠΌΠ°Π³Π½ΠΈΡΠ΅Π½Π½ΠΎΡΡΡ ΠΎΠ±ΡΠ°Π·ΡΠΎΠ². Π Π°Π·Π»ΠΈΡΠ½ΡΠ΅
ΠΏΠΎΠ»ΠΈΠΌΠΎΡΡΠ½ΡΠ΅ ΠΌΠΎΠ΄ΠΈΡΠΈΠΊΠ°ΡΠΈΠΈ ΠΊΠΎΠ±Π°Π»ΡΡΠ° Π½Π΅ ΠΈΠ·ΠΌΠ΅Π½ΡΡΡ ΠΏΠΎΡΠ»Π΅Π΄ΠΎΠ²Π°ΡΠ΅Π»ΡΠ½ΠΎΡΡΡ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ°Π· ΠΈ ΠΈΡ
ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡ ΠΈΠ½ΠΈΡΠΈΠΈΡΠΎΠ²Π°Π½ΠΈΡ.The experimental results of a study of solid-state synthesis of cobalt germanides in epitaxial Ge/Ξ±-Co(001)
and Ge/Ξ²-Co(110) nanofilms are presented. For both polymorphic modifications of cobalt, it is demonstrated that the Co5Ge7 phase occurs at ~275β¦C. When the annealing temperature increases to ~300β¦C,
the CoGe2 phase forms, which sharply reduces the electric resistance and magnetic characteristics of the
samples. The order of the formation of phases and the temperatures at which the phases are formed are
not changed based on the polymorphic modification of cobalt