Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated

Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETS

A radiation effect on edgeless FD accumulation mode (AM) p-channel and inversion mode (IM) n-channel MOSFETs, fabricated on UNIBOND SOI wafers, is investigated. The method of second derivative is used to determine the threshold voltages of front and back channels in the MOSFETs from the measurements of front-gate transistors only. Stronger irradiation effect on IM n-MOSFET than that on AM p-MOSFET is revealed. It has been showed, that radiation-induced positive charge in the BOX inverted back interface causes back channel creation in IM n-MOSFET but no such effect in AM p-MOSFET has been observed. It is demonstrated that small-doses have the effect of improving the quality of both interface