The deposition of CuIn(S,Se)2 thin films for solar cells by means of chemical bath deposition

Расчетом ионных равновесий с использованием термодинамических констант в системах “хлорид индия − хлорид меди − тиомочевина” и “хлорид индия − хлорид меди − тиомочевина – трилон Б” определены граничные условия образования Cu2S и In2S3 и их гидроксидов с учетом кристаллизационного фактора, а также потенциальная область образования твердых растворов замещения на их основе. Экспериментально показана возможность получения гидрохимическим осаждением пленок твердых растворов замещения InxCu1−xS2 различного состава. Обсуждены экспериментальные данные по распределению и атомарным соотношениям элементов в синтезированных образцах, полученные методом рентгеновской фотоэлектронной спектроскопии. Благодаря растровой электронной микроскопии выявлены изменения поверхностной микроструктуры пленок от температуры и состава реакционной смеси. Синтезированные тонкопленочные соединения обладают n-типом проводимости.Calculation of ionic equilibrium with using of thermodynamic constants for systems “indium chloride − copper chloride − teourea” and “indium chloride − copper chloride − teourea – trilon B” defines boundary conditions of formation Cu2S and In2S3 and their hydroxides in to account the crystallization factor. It was experimentally shown that there is bath deposition of solid solution thin films InxCu1−xS2 with various compositions. The experimental date on the distribution and the atomic ration of elements in synthesized patterns obtained by the x-ray photoelectron spectroscopy were discussed. The change in the surface microstructure of thin films depending on the temperature and the composition of reaction bath were determined by means of scanning electron microscopy. The structure of obtained thin films has n-type of conductivity.Программа развития УрФУ на 2013 год (п.1.2.2.3

Diagrams of the formation of In2S3 and In 2Se3 films on vitroceramic upon precipitation, according to potentiometric titration

Boundary conditions and ranges of the formation of indium(III) sulfide and selenide upon precipitation by thiocarbamide and selenocarbamide are determined. Potentiometric titration of indium chloride (InCl3) in the concentration range of 0.0001 to 0.100 mol/L by a solution of sodium hydroxide is performed. It is found that the following pH ranges are optimal for In 2S3 and In2Se3 film precipitation: from 3.0 to 4.5 and from 9.0 to 14.0. Indium selenide layers 100 to 300 nm thick are prepared on vitroceramic by hydrochemcial precipitation. © 2013 Pleiades Publishing, Ltd

Electrophoretic deposition of YSZ layers on pyrolytic graphite and a porous anode substrate based on NiO-YSZ

Solid oxide fuel cells are promising hydrogen energy devices. The goal of this research was to create ceramic layers for SOFCs based on yttria-stabilized zirconia (YSZ) and to investigate their parameters. YSZ ceramic layers with a thickness of 5.14 μm on a porous NiO–YSZ substrate and 7 μm on pyrolytic graphite were obtained by electrophoretic deposition. X-ray diffraction and electron microscopy were used to determine the composition, structure, and morphological features of ceramic layers. The effects of the substrate's nature, the degree of dispersion of the initial YSZ powder, and the heat treatment conditions on the properties of the ceramic layer YSZ were considered

The Research on Phase Composition and Porous Structure of the Indium Sulphide (III) Nanomaterials Obtained Via Chemical Bath Deposition

The authors are grateful to Professor V. A. Moshnikov and Professor V. F. Markov for their help and support in carrying out this research, and V. S. Levitsky for the assistance in the study of samples by Raman spectroscopy method

Chemical Bath Deposition of In2S3 Thin Films as a Promising Material and Buffer Layer for Solar Cells

Authors thank scientific chief V. F. Markov, M. V. Kuznetsov for the X-ray phase analysis and A. A. Pankratov for the scanning electron microscopy (UB RAS)

Search for Conditions of Chemical Deposition of ZrO2 Films for Thermoelectric Convertors

Yttria stabilized zirconia films were deposited on different substrates by using sol-gel method. Composition and morphology of synthesized films were investigated. The conclusion about influence of substrate material on film morphology is made. Presence of yttrium in zirconia films was found. Crystallin structure of film crystallites was investigated.В настоящей статье описывается нанесение золь-гель методом диоксида циркония, стабилизированного оксидом иттрия, на различные подложки. Исследованы состав и морфология полученных пленок. Сделан вывод о влиянии материала подложки на морфологию пленок. Установлено вхождение иттрия в состав пленок. Определена кристаллическая структура кристаллитов пленок

Study of chemical bath deposited In2S3 thin films

Indum(III) sulfide (In2S3) thin films were grown by means of chemical bath deposition from acid solution. Calculation of ionic equilibrium with using of thermodynamic constants for systems defines boundary conditions of formation In2S3. Films were characterized by means of XRD, SEM, EDX and XPS methods. According to XRD, films have cubic structure of In2S3. XPS method shown that the surface of In2S3 thin film includes oxygen and carbon contained impurities. SEM confirmed nanosize nature of thin films. Optical band gap of indium(III) sulfide equal to 2.3 eV