Analytical investigation of magnetic field distributions around superconducting strips on ferromagnetic substrates

The complex-field approach is developed to derive analytical expressions of the magnetic field distributions around superconducting strips on ferromagnetic substrates (SC/FM strips). We consider the ferromagnetic substrates as ideal soft magnets with an infinite magnetic permeability, neglecting the ferromagnetic hysteresis. On the basis of the critical state model for a superconducting strip, the ac susceptibility $\chi_1'+i\chi_1''$ of a SC/FM strip exposed to a perpendicular ac magnetic field is theoretically investigated, and the results are compared with those for superconducting strips on nonmagnetic substrates (SC/NM strips). The real part $\chi_1'$ for $H_0/j_cd_s\to 0$ (where $H_0$ is the amplitude of the ac magnetic field, $j_c$ is the critical current density, and $d_s$ is the thickness of the superconducting strip) of a SC/FM strip is 3/4 of that of a SC/NM strip. The imaginary part $\chi_1''$ (or ac loss $Q$) for $H_0/j_cd_s<0.14$ of a SC/FM strip is larger than that of a SC/NM strip, even when the ferromagnetic hysteresis is neglected, and this enhancement of $\chi_1''$ (or $Q$) is due to the edge effect of the ferromagnetic substrate.Comment: 8 pages, 6 figures, submitted to Phys. Rev.

Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures

Spin and spin-spin correlations in chargino pair production at future linear e+e- colliders

A possibility to measure the spin and spin-spin correlations of a chargino pair is investigated in the process electron positron -> chargino_1 anti-chargino_1 -> (neutralino_1 quark anti-quark) (neutralino_1 quark anti-quark) at future linear-collider energies. The total and the differential cross sections are calculated by the GRACE system which allows for the full spin correlation. Experimental sensitivity of the measurements are examined by assuming the limited detector resolution, the initial state radiation and the beam-beam effect (beamstrahlung). It is found that generally the spin-spin correlation can only be measured with a lower sensitivity than the chargino spin itself. The dependence of the correlation measurements on the relevant SUSY parameters can be seen for a light sneutrino case, but the situation becomes worse for a heavier sneutrino.Comment: 23 pages, 7 figures, 6 tables; added reference for section

The spin-incoherent Luttinger liquid

In contrast to the well known Fermi liquid theory of three dimensions, interacting one-dimensional and quasi one-dimensional systems of fermions are described at low energy by an effective theory known as Luttinger liquid theory. This theory is expressed in terms of collective many-body excitations that show exotic behavior such as spin-charge separation. Luttinger liquid theory is commonly applied on the premise that "low energy" describes both the spin and charge sectors. However, when the interactions in the system are very strong, as they typically are at low particle densities, the ratio of spin to charge energy may become exponentially small. It is then possible at very low temperatures for the energy to be low compared to the characteristic charge energy, but still high compared to the characteristic spin energy. This energy window of near ground-state charge degrees of freedom, but highly thermally excited spin degrees of freedom is called a spin-incoherent Luttinger liquid. The spin-incoherent Luttinger liquid exhibits a higher degree universality than the Luttinger liquid and its properties are qualitatively distinct. In this colloquium I detail some of the recent theoretical developments in the field and describe experimental indications of such a regime in gated semiconductor quantum wires.Comment: 21 pages, 18 figures. Updated references, corrected typo in Eq.(20) in journal versio

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures, we applied voltage at particular sites on the InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate. At 240°C, InAs nano dots (width: 20–40 nm, height: 1.5–2.0 nm) were fabricated. At 430°C, InAs nano dots (width: 16–20 nm, height: 0.75–1.5 nm) were also fabricated. However, these dots were remained at least 40 s and collapsed less than 1000 s. Then, we fabricated InAs nano dots (width: 24–150 nm, height: 2.8–28 nm) at 300°C under In and As4 irradiations. These were not collapsed and considered to high crystalline dots