Organopalladium catalyst on S-terminated GaAs(001)-(2×6) surface

Organopalladium molecules, such as Pd(CH3COO)2 ({Pd}), immobilized on the S-terminated GaAs(001), termed GaAs–S–{Pd} have high catalytic activity and cycle durability in the Mizoroki–Heck reaction. It is thought that the presence of Ga–S bonds in the single atomic layer S-termination is essential for these catalytic properties despite the much higher thickness (~100 nm) of the {Pd} films. In this study, the authors demonstrate the retention of Ga–S bonds in ultrathin GaAs–S–{Pd} by using reflection high-energy electron diffraction and scanning tunneling microscopy (STM). The ultrathin GaAs–S–{Pd} was prepared by using a vapor-deposition technique. Deposited {Pd} was observed as ~1 nm dotlike structures with STM. The adsorption rate of {Pd} was also investigated

Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures, we applied voltage at particular sites on the InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate. At 240°C, InAs nano dots (width: 20–40 nm, height: 1.5–2.0 nm) were fabricated. At 430°C, InAs nano dots (width: 16–20 nm, height: 0.75–1.5 nm) were also fabricated. However, these dots were remained at least 40 s and collapsed less than 1000 s. Then, we fabricated InAs nano dots (width: 24–150 nm, height: 2.8–28 nm) at 300°C under In and As4 irradiations. These were not collapsed and considered to high crystalline dots

Phase II clinical trial of sorafenib plus interferon-alpha treatment for patients with metastatic renal cell carcinoma in Japan

Comparison of the current study with other sorafenib-interferon combination studies and with single-agent sorafenib studies [25]. (XLSX 12 kb