Electromechanical coupling in free-standing AlGaN/GaN planar structures

The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully-coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are obtained by minimizing the electric enthalpy. We apply constraints appropriate to pseudomorphic semiconductor epitaxial layers and obtain closed-form analytic expressions that take into account the wurtzite crystal anisotropy. It is shown that in the absence of free charges, the calculated strain and electric fields are substantially differently from those obtained using the standard model without electromechanical coupling. It is also shown, however, that when a two-dimensional electron gas is present at the AlGaN/GaN interface, a condition that is the basis for heterojunction field-effect transistors, the electromechanical coupling is screened and the decoupled model is once again a good approximation. Specific cases of these calculations corresponding to transistor and superlattice structures are discussed.Comment: revte

The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fraction of 0.3. This result has consequences for the calculation of quantities that depend directly on the strain tensor. These quantities include the eigenstates and electrostatic potential in AlGaN/GaN heterostructures. It is shown that for an HFET, the electromechanical coupling is screened by the 2DEG. Results for the electromechanical model, including the 2DEG, indicate that the standard (decoupled) strain model is a reasonable approximation for HFET calculataions. The analytical results are supported by a self-consistent Schr\"odinger-Poisson calculation that includes the fully-coupled equation of state together with the charge-balance equation.Comment: 6 figures, revte

Forming method and characteristics of coiled spring in small coil diameter and with high rectangular ratio in winding wire cross section

This paper presents a new forming method of a coiled spring which is used as a forceps manipulator of a surgical robot. Joint parts of forceps manipulator are required to be “easy to bend and strong to twist”. This demand is fulfilled by using coiled springs with high rectangular ratio in winding wire cross section. However, the coiled springs are conventionally expensive as they are fabricated by machining. This study proposed a new and inexpensive forming method for fabrication of the coiled spring with high rectangular ratio in the wire cross section. In this method, the coiled spring with circular shape in the winding wire cross section is compressed in the coil axial direction by upsetting, and then the rectangle ratio of the wire becomes high. The coiled spring with a high rectangular ratio of 3 was obtained by the proposed method. In addition, a numerical analysis and an experiment were conducted for evaluation of the formed coiled springs in terms of tensile, torsional, and bending characteristics. The formed coiled springs were easy to bend and strong to twist from results. Moreover, the elastic limit of the formed coiled springs improved due to work hardening by upsetting

Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter

科研費報告書収録論文(課題番号:14205053/研究代表者:坪内和夫/ソフトウェア無線端末用超低消費電力GHz帯RF DSPの開発

Transport and Magnetic Studies on the Spin State Transition of Pr1-xCaxCoO3 up to High Pressure

Transport and magnetic measurements and structural and NMR studies have been carried out on (Pr1-yR'y)1-xAxCoO3 {R'=(rare earth elements and Y); A=(Ca, Ba and Sr)} at ambient pressure or under high pressure. The system exhibits a phase transition from a nearly metallic to an insulating state with decreasing temperature T, where the low spin (LS) state of Co3+ is suddenly stabilized. For y=0, we have constructed a T-x phase diagram at various values of the external pressure p. It shows that the (T, x) region of the low temperature phase, which is confined to a very narrow region around x=0.5 at ambient pressure, expands as p increases, suggesting that the transition is not due to an order-disorder type one. For the occurrence of the transition, both the Pr and Ca atoms seem to be necessary. The intimate relationship between the local structure around the Co ions and the electronic (or spin) state of Co3+ ions is discussed: For the smaller unit cell volume or the smaller volume of the CoO6 octahedra and for the larger tilting angle of the octahedra, the temperature of the transition becomes higher. The role of the carriers introduced by the doping of the A atoms, is also discussed. By analyzing the data of 59Co-NMR spectra and magnetic susceptibilities of Pr1-xCaxCoO3 the energy separations among the different spin states of Co3+ and Co4+ are roughly estimated.Comment: 15 pages, 15 figures, 2 tables, submitted to J. Phys. Soc. Jp