Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the technique is best used at moderate illumination intensities, it is important to adopt a generalized analysis that takes account of different injection levels across a wafer. The technique has been verified via measurement of a deliberately contaminated single-crystal silicon wafer with a range of known iron concentrations. It has also been applied to directionally solidified ingot-grown multicrystalline silicon wafers made for solar cell production, which contain a detectible amount of unwanted iron. The iron images on these wafers reveal internal gettering of iron to grain boundaries and dislocated regions during ingot growth.D.M. is supported by an Australian Research Council QEII Fellowship. The Centre of Excellence for Advanced Silicon Photovoltaics and Photonics at UNSW is funded by the Australian Research Council

Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

We present a method for monitoring crystal orientations in chemically polished and unpassivated multicrystalline silicon wafers based on band-to-band photoluminescence imaging. The photoluminescence intensity from such wafers is dominated by surface recombination, which is crystal orientation dependent. We demonstrate that a strong correlation exists between the surface energy of different grain orientations, which are modelled based on first principles, and their corresponding photoluminescence intensity. This method may be useful in monitoring mixes of crystal orientations in multicrystalline or so-called “cast monocrystalline” wafers.H. C. Sio acknowledges scholarship support from BT Imaging and the Australian Solar Institute, and the Centre for Advanced Microscopy at ANU for SEM access. This work has been supported by the Australian Research Council

Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

We present a method based on steady state photoluminescence (PL) imaging and modelling of the PL intensity profile across a grain boundary (GB) using 2D finite element analysis, to quantify the recombination strength of a GB in terms of the effective surface recombination velocity (S e f f). This quantity is a more meaningful and absolute measure of the recombination activity of a GB compared to the commonly used signal contrast, which can strongly depend on other sample parameters, such as the intra-grain bulk lifetime. The method also allows the injection dependence of the S e f f of a given GB to be explicitly determined. The method is particularly useful for studying the responses of GBs to different cell processing steps, such as phosphorus gettering and hydrogenation. The method is demonstrated on double-side passivated multicrystalline wafers, both before and after gettering, and single-side passivated wafers with a strongly non-uniform carrier density profile depth-wise. Good agreement is found between the measured PL profile and the simulated PL profile for both cases. We demonstrate that single-side passivated wafers allow more recombination active grain boundaries to be analysed with less unwanted influence from nearby features. The sensitivity limits and other practical constraints of the method are also discussed

Surface plasmon enhanced silicon solar cells

Thin-film solar cells have the potential to significantly decrease the cost of photovoltaics. Light trapping is particularly critical in such thin-film crystalline silicon solar cells in order to increase light absorption and hence cell efficiency. In this article we investigate the suitability of localized surface plasmons on silvernanoparticles for enhancing the absorbance of silicon solar cells. We find that surface plasmons can increase the spectral response of thin-film cells over almost the entire solar spectrum. At wavelengths close to the band gap of Si we observe a significant enhancement of the absorption for both thin-film and wafer-based structures. We report a sevenfold enhancement for wafer-based cells at λ=1200 nm and up to 16-fold enhancement at λ=1050 nm for 1.25 μm thin silicon-on-insulator (SOI) cells, and compare the results with a theoretical dipole-waveguide model. We also report a close to 12-fold enhancement in the electroluminescence from ultrathin SOI light-emitting diodes and investigate the effect of varying the particle size on that enhancement.S. Pillai would like to acknowledge the UNSW Faculty of Engineering Research Scholarship. K.R. Catchpole acknowledges the support of an Australian Research Council fellowship

Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon

The excess carrier density at which the carrier lifetime in crystalline silicon remains unchanged after dissociating iron-boron pairs, known as the crossover point, is reported as a function of the borondopant concentration. Modeling this doping dependence with the Shockley-Read-Hall model does not require knowledge of the iron concentration and suggests a possible refinement of reported values of the capture cross sections for electrons and holes of the acceptor level of iron-boron pairs. In addition, photoluminescence-based measurements were found to offer some distinct advantages over traditional photoconductance-based techniques in determining recombination parameters from low-injection carrier lifetimes.This work has been supported by the Australian Research Council

Automated efficiency loss analysis by luminescence image reconstruction using generative adversarial networks

Identifying solar cell efficiency shortfalls in production lines is crucial to troubleshoot and optimize manufacturing processes. With the adoption of luminescence imaging as a key end-of-line characterization tool, a wealth of information is available to evaluate cell performance and classify defects, suitable for user input-free deep-learning analysis. We propose an automated reconstruction method, based on state-of-the-art generative adversarial networks, to remove defective regions in luminescence images. The reconstructed and original images are compared to estimate the efficiency loss. The method is validated on intentionally damaged cells by reconstructing defect-free images and then predicting the efficiency loss. The method can differentiate between different types of defects and pinpoint the defects that lead to the highest efficiency shortfall, enabling manufacturers to troubleshoot production lines in a fast and cost-effective manner. The proposed approach unlocks the potential of luminescence imaging as an effective end-of-line characterization tool

Enhanced emission from Si-based light-emitting diodes using surface plasmons

Excitation of surface plasmons on metallic nanoparticles has potential for increasing the absorption and emission from thin Si devices. We report an eight-fold enhancement in electroluminescence from silicon-on-insulator light-emitting diodes at 900nm via excitation of surface plasmon resonance in silvernanoparticles, along with a redshift in the electroluminescence by 70nm by overcoating the nanoparticles with ZnS. The enhancement is due to coupling between the electromagnetic excitations of the silvernanoparticles and the waveguide modes.The Centre of Excellence for Advanced Silicon Photovoltaics and Photonics is supported under the Australian Research Council’s Centres of Excellence Scheme

Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence

In this work, we present two techniques for spatially resolved determination of the dopant density in silicon wafers. The first technique is based on measuring the formation rate of iron-acceptor pairs, which is monitored by band-to-band photoluminescence in low injection. This method provides absolute boron concentration images on p-type wafers, even if compensating dopants such as phosphorus are present, without reference to other techniques. The second technique is based on photoluminescence images of unpassivated wafers, where the excess carrier concentration is pinned by a high surface recombination rate. This rapid technique is applicable to either p- or n-type wafers, when the bulk carrier lifetime is much longer than the transit time to the surface. The relative sensitivities and advantages of the two techniques are discussed.This work has been supported by the Australian Research Council