Anomalous electronic transport in Quasicrystals and related Complex Metallic Alloys

We analyze the transport properties in approximants of quasicrystals alpha-AlMnSi, 1/1-AlCuFe and for the complex metallic phase lambda-AlMn. These phases presents strong analogies in their local atomic structures and are related to existing quasicrystalline phases. Experimentally they present unusual transport properties with low conductivities and a mix of metallic-like and insulating-like characteristics. We compute the band structure and the quantum diffusion in the perfect structure without disorder and introduce simple approximations that allow to treat the effect of disorder. Our results demonstrate that the standard Bloch-Boltzmann theory is not applicable to these intermetallic phases. Indeed their dispersion relation are flat indicating small band velocities and corrections to quantum diffusion that are not taken into account in the semi-classical Bloch-Boltzmann scheme become dominant. We call this regime the small velocity regime. A simple Relaxation Time Approximation to treat the effect of disorder allows us to reproduce the main experimental facts on conductivity qualitatively and even quantitatively.Comment: 14 page

Quantum transport in quasicrystals and complex metallic alloys

The semi-classical Bloch-Boltzmann theory is at the heart of our understanding of conduction in solids, ranging from metals to semi-conductors. Physical systems that are beyond the range of applicability of this theory are thus of fundamental interest. This is the case of disordered systems which present quantum interferences in the diffusive regime, i.e. Anderson localization effects. It appears that in quasicrystals and related complex metallic alloys another type of breakdown of the semi-classical Bloch-Boltzmann theory operates. This type of quantum transport is related to the specific propagation mode of electrons in these systems. We develop a theory of quantum transport that applies to a normal ballistic law but also to these specific diffusion laws. As we show phenomenological models based on this theory describe correctly the experimental transport properties. Ab-initio calculations performed on approximants confirm also the validity of this anomalous quantum diffusion scheme. Although the present chapter focuses on electrons in quasicrystals and complex metallic alloys, the concept that are developed here can be useful for phonons in these systems. There is also a deep analogy between the type of quantum transport described here and the conduction properties of other systems where charge carriers are also slow, such as some heavy fermions or polaronic systems.Comment: review article. 65 page

Conductivity of Graphene with Resonant Adsorbates: Beyond the Nearest Neighbor Hopping Model

Adsorbates on graphene can create resonances that lead to efficient electron scattering and strongly affect the electronic conductivity. Therefore a proper description of these resonances is important to get a good insight of their effect on conductivity. The characteristics of the resonance and in particular its T-matrix depend on the adsorbate itself but also on the electronic structure of graphene. Here we show that a proper tight-binding model of graphene which includes hopping beyond the nearest-neighbor lead to sizable modifications of the scattering properties with respect to the mostly used nearest neighbor hopping model. We compare results obtained with hopping beyond the nearest-neighbor to those of our recent work Phys. Rev. Lett. 113, 146601 (2013). We conclude that the universal properties discussed in our recent work are unchanged but that a detailed comparison with experiments require a sufficiently precise tight-binding model of the graphene layer.Comment: 8 pages, 5 figure

Conductivity of graphene with resonant and non-resonant adsorbates

We propose a unified description of transport in graphene with adsorbates that fully takes into account localization effects and loss of electronic coherence due to inelastic processes. We focus in particular on the role of the scattering properties of the adsorbates and analyze in detail cases with resonant or non resonant scattering. For both models we identify several regimes of conduction depending on the value of the Fermi energy. Sufficiently far from the Dirac energy and at sufficiently small concentrations the semi-classical theory can be a good approximation. Near the Dirac energy we identify different quantum regimes, where the conductivity presents universal behaviors.Comment: 6 page

Electronic structure of complex spd Hume-Rothery phases in transition-metal aluminides

The discovery of quasicrystals phases and approximants in Al(rich)-Mn system has revived the interest for complex aluminides containing transition-metal atoms. On one hand, it is now accepted that the Hume-Rothery stabilization plays a crucial role. On the other hand, transition-metal atoms have also a very important effect on their stability and their physical properties. In this paper, we review studies that unifies the classical Hume-Rothery stabilization for sp electron phases with the virtual bound state model for transition-metal atoms embedded in the aluminum matrix. These studies lead to a new theory for \"spd electron phases\". It is applied successfully to Al(Si)--transition-metal alloys and it gives a coherent picture of their stability and physical properties. These works are based on first-principles calculations of the electronic structure and simplified models, compared to experimental results. A more detailed review article is published in Prog. Mater. Sci. 50 (2005) p. 679-788

Electronic Transport in Graphene: Quantum Effects and Role of Local Defects

In this paper we present generic properties of quantum transport in mono-layer graphene. In the scheme of the Kubo-Geenwood formula, we compute the square spreading of wave packets of a given energy with is directly related to conductivity. As a first result, we compute analytically the time dependent diffusion for pure graphene. In addition to the semi-classical term a second term exists that is due to matrix elements of the velocity operator between electron and hole bands. This term is related to velocity fluctuations i.e. Zitterbewegung effect. Secondly, we study numerically the quantum diffusion in graphene with simple vacancies and pair of neighboring vacancies (divacancies), that simulate schematically oxidation, hydrogenation and other functionalisations of graphene. We analyze in particular the time dependence of the diffusion and its dependence on energy in relation with the electronic structure. We compute also the mean free path and the semi-classical value of the conductivity as a function of energy in the limit of small concentration of defects.Comment: 10 pages, 5 figure

Electronic Structure and Transport in Approximants of the Penrose Tiling

Proceedings of the 12th International Conference on Quasicrystal. 4 pagesInternational audienceWe present numerical calculations of electronic structure and transport in the Penrose approximants. The electronic structure of perfect approximants shows a spiky density of states and a tendency to localization that is more pronounced in the middle of the band. Near the band edges the behavior is more similar to that of free electrons. These calculations of band structure and in particular the band scaling suggest an anomalous quantum diffusion when compared to normal ballistic crystals. This is con firmed by a numerical calculation of quantum diffusion which shows a crossover from normal ballistic propagation at long times to anomalous, possibly insulator-like, behavior at short times. The time scale t∗(E) for this crossover is computed for several approximants and is detailed. The consequences for electronic conductivity are discussed in the context of the relaxation time approximation. The metallic-like or non-metallic-like behavior of the conductivity is dictated by the comparison between the scattering time due to defects and the time scale t∗(E)

Electronic localization in twisted bilayer MoS2_2 with small rotation angle

Moir\'e patterns are known to confine electronic states in transition metal dichalcogenide bilayers, thus generalizing the notion of magic angles discovered in twisted bilayer graphene to semiconductors. Here, we present a revised Slater-Koster tight-binding model that facilitates the first reliable and systematic studies of such states in twisted bilayer MoS$_2$ for the whole range of rotation angles $\theta$. We show that isolated bands appear at low energy for $\theta \lesssim 5 - 6^\circ$. Moreover, these bands become "flatbands", characterized by a vanishing average velocity, for the smallest angles $\theta \lesssim 2^\circ$.Comment: 13 pages, 14 figure

Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees

It is now well established theoretically and experimentally that a moir\'e pattern, due to a rotation of two atomic layers with respect to each other, creates low-energy flat bands. First discovered in twisted bilayer graphene, these new electronic states are at the origin of strong electronic correlations and even of unconventional superconductivity. Twisted bilayers (tb) of transition metal dichalcogenides (TMDs) also exhibit flat bands around their semiconductor gap at small rotation angles. In this paper, we present a DFT study to analyze the effect of the atomic relaxation on the low-energy bands of tb-MoS2 with a rotation angle of 5.09 degrees. We show that in-plane atomic relaxation is not essential here, while out-of-plane relaxation dominates the electronic structure. We propose a simple and efficient atomic model to predict this relaxation.Comment: 5 pages, 4 figures. arXiv admin note: text overlap with arXiv:2005.1305

Quantum localization and electronic transport in covalently functionalized carbon nanotubes

Carbon nanotubes are of central importance for applications in nano-electronics thanks to their exceptional transport properties. They can be used as sensors, for example in biological applications, provided that they are functionalized to detect specific molecules. Due to their one-dimensional geometry the carbon nanotubes are very sensitive to the phenomenon of Anderson localization and it is therefore essential to know how the functionalization modifies their conduction properties and if they remain good conductors. Here we present a study of the quantum localization induced by functionalization in metallic single walled carbon nanotubes (SWCNT) with circumferences up to $15\; nm$. We consider resonant and non-resonant adsorbates that represent two types of covalently functionalized groups with moderate and strong scattering properties. The present study provides a detailed analysis of the localization behaviour and shows that the localization length can decrease down to $20-50\; nm$ at concentrations of about 1 percent of adsorbates. On this basis we discuss the possible electronic transport mechanisms which can be either metallic like or insulating like with variable range hopping