A physically based fluorescent lamp model for a SPICE or a simulink environment

This paper describes a method of modeling fluorescent lamps. The lamp model can be implemented in all major circuit simulation software packages, an example has been given for SPICE and Simulink. The model is based upon a simplified set of physical equations that gives the model validity over a wider range of operating conditions than current fluorescent lamp SPICE models allow for. The model can be used to model any low-pressure mercury-buffer gas fluorescent lamps by entering key lamp parameters, length, radius, cold-spot temperature, and buffer gas fill pressure. If fill pressure is not known, a default value dependent on lamp radius is used. The model shows good agreement over a wide range of operating frequencies and lamp powers

A dynamic conductance model of fluorescent lamp for electronic ballast design simulation

A Spice-compatible dynamic conductance model of a fluorescent lamp for use in electronic ballast simulation is presented. The time-dependent conductance of the fluorescent lamp is derived from a plasma ionization balance equation that uses simplified descriptions of the physical processes within the lamp as its basis. The model has been designed to enable user-defined lamp radius, length, buffer gas pressure and cold-spot temperature as input parameters thus representing a valuable tool for ballast simulations. Simulation results are compared to experimental measurements and satisfactory agreement is achieved

Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3

Avalanche multiplication and excess noise have been measured on a series of Al/sub x/Ga/sub 1-x/As-GaAs and GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3,0.45, and 0.6) single heterojunction p/sup +/-i-n/sup +/ diodes. In some devices excess noise is lower than in equivalent homojunction devices with avalanche regions composed of either of the constituent materials, the heterojunction with x=0.3 showing the greatest improvement. Excess noise deteriorates with higher values of x because of the associated increase in hole ionization in the Al/sub x/Ga/sub 1-x/As layer. It also depends critically upon the carrier injection conditions and Monte Carlo simulations show that this dependence results from the variation in the degree of noisy feedback processes on the position of the injected carriers

Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9)

Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x 0.63

Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes

The avalanche noise characteristics of Al0.8Ga0.2 As have been measured in a range of p-i-n and n-i-p diodes with i-region widths ω varying from 1.02 to 0.02 μm. While thick bulk diodes exhibit low excess noise from electron initiated multiplication, owing to the large α/β ratio (1/k), the excess noise of diodes with ω < 0.31 μm were found to be greatly reduced by the effects of dead space. The thinnest diodes exhibit very low excess noise, corresponding to k = 0.08, up to a multiplication value of 90. In contrast to most III-V materials, it was found that both thick and thin Al0.8Ga0.2As multiplication layers can give very low excess noise and that electrons must initiate multiplication to minimize excess noise, even in thin structure

Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes

Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ diodes, with avalanche region thickness, w ranging from 0.026 μm to 0.85 μm. The results show that the ionization coefficient for electrons is slightly higher than for holes in thick, bulk material. At fixed multiplication values the excess noise factor was found to decrease with decreasing w, irrespective of injected carrier type. Owing to the wide Al0.6Ga0.4As bandgap extremely thin devices can sustain very high electric fields, giving rise to very low excess noise factors, of around F~3.3 at a multiplication factor of M~15.5 in the structure with w=0.026 μm. This is the lowest reported excess noise at this value of multiplication for devices grown on GaAs substrates. Recursion equation modeling, using both a hard threshold dead space model and one which incorporates the detailed history of the ionizing carriers, is used to model the nonlocal nature of impact ionization giving rise to the reduction in excess noise with decreasing w. Although the hard threshold dead space model could reproduce qualitatively the experimental results, better agreement was obtained from the history-dependent mode

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

The avalanche multiplication and excess noise characteristics of 4H-SiC avalanche photodiodes with i-region widths of 0.105 and 0.285 mum have been investigated using 230-365-nm light, while the responsivities of the photodiodes at unity gain were examined for wavelengths up to 375 nm. Peak unity gain responsivities of more than 130 mA/W at 265 nm, equivalent to quantum efficiencies of more than 60%, were obtained for both structures. The measured avalanche characteristics show, that beta > alpha and that the beta/alpha ratio remains large even in thin 4H-SiC avalanche regions. Very low excess noise, corresponding to k(eff) < 0.15 in the local noise model, where k(eff) = alpha/beta(beta/alpha) for hole (electron) injection, was measured with 365-nm light in both structures. Modeling the experimental results using a simple quantum efficiency model and a nonlocal description yields effective ionization threshold energies of 12 and 8 eV for electrons and holes, respectively, and suggests that the dead space in 4H-SiC is soft. Although dead space is important, pure hole injection is still required to ensure low excess noise in thin 4H-SiC APDs owing to beta/alpha ratios that remain large, even at very high fields

Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

The avalanche multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes with an i-region width of 0.1 µm have been investigated. The diodes are found to exhibit multiplication characteristics which change significantly when the wavelength of the illuminating light changes from 230 to 365 nm. These multiplication characteristics show unambiguously that β > α in 4H-SiC and that the β/α ratio remains large even in thin 4H-SiC diodes. Low excess noise, corresponding to k=0.1 in the local model where k=α/β for hole injection, was measured using 325-nm light. The results indicate that 4H-SiC is a suitable material for realizing low-noise UV avalanche photodiodes requiring good visible-blind performance

Synthesis of [3-C-13]-2,3-dihydroxy-4-methoxybenzaldehyde

An efficient synthesis of [3-13C]-2,3-dihydroxy-4-methoxybenzaldehyde, an isotopically labelled probe of a common intermediate used in the synthesis of a number of biologically relevant molecules, has been achieved in 9 steps from an acyclic, non-aromatic precursor. A 13C label for molecular imaging was introduced in a linear synthesis from the reaction of [13C]-labelled methyl iodide with glutaric monomethyl ester chloride. Cyclisation then aromatisation gave 1,3-dimethoxybenzene and an additional methoxy group was introduced by a formylation/Baeyer–Villiger/hydrolysis/methylation sequence. Subsequent ortho-formylation and selective demethylation yielded the desired [3-13C]-2,3-dihydroxy-4-methoxybenzaldehyde

Avalanche noise characteristics of thin GaAs structures with distributed carrier generation

It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than predicted by the local noise model. In this paper, it is shown that the noise from multiplication initiated by carriers generated throughout a 0.1 μm avalanche region is also lower than predicted by the local model but higher than that obtained with pure injection of either carrier type. This behavior is due to the effects of nonlocal ionization brought about by the dead space; the minimum distance a carrier has to travel in the electric field to initiate an ionization even