Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor

International audienceThin-film and single-crystal n-channel organic field-effect transistors are built from the sulfur rich π-electron acceptor, (E)-3,3′-diethyl-5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathione (DEBTTT). Different source and drain electrode materials are investigated: gold, the conducting charge transfer salt (tetrathiafulvalene)(tetracyanoquinodimethane), and carbon paste. Regardless of the nature of the electrodes, air-stable n-channel transistors have been obtained. Single crystals exhibit a higher performance than the thin-film transistors with a mobility of up to 0.22 cm2 V−1 s−1. These thin-film and single-crystal devices exhibit excellent long-term stability as demonstrated by the mobility measured during several weeks. The high mobility and air stability are ascribed to the characteristic three-dimensional S–S network coming from the thioketone sulfur atoms

Organic Semiconductors and Conductors with tert-Butyl Substituents

Tetrathiafulvalene (TTF), pentacene, and quarterthiophene with tert-butyl substituents are synthesized, and the crystal structures and the transistor properties are investigated. The tetracyanoquinodimethane (TCNQ) complex of tert-butyl TTF constructs highly one-dimensional segregated columns with tetragonal crystal symmetry

Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

International audienceA series of thin-film n-channel organic field-effect transistors based on various birhodanines, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,2'-dione-4,4'-dithiones (OS-R) and their sulfur analogues, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,4,2',4'-tetrathiones (SS-R) are studied. The SS-R compounds have tilted stacking crystal structures, whereas the OS-R compounds show basically herringbone structures. The alkyl chain R length and the intermolecular S-S interactions influence the molecular packing to realize excellent long-term air stability in the thin-film transistors