1 research outputs found
A Unique Solution-Processable n‑Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors
There
have been only a limited number of reports on solution-processed
n-channel organic thin-film transistor (OTFT) devices with high levels
of electrical performance because the material design process for
n-type organic semiconductors is relatively difficult compared with
p-type semiconductors, and further chemical modification of the functional
groups is required. As a result, the development of soluble n-type
organic semiconductors with high carrier mobilities has remained a
challenge. Our work addresses this by introducing a novel molecular
design to realize soluble n-type organic semiconductors with high
electron mobilities through the simple substitution of trifluoromethyl
or trifluoromethoxy groups at the meta positions to support sufficient
solubility, creating suitable LUMO energy levels and high crystallinity.
These newly designed benzobisÂ(thiadiazole) (BBT)-based molecules showed
electron mobilities as high as 0.61 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> in solution-processed OTFT devices. As a practical
application in printed electronics, we demonstrated an organic complementary
inverter circuit with OTFT devices using the developed soluble organic
semiconductors. Because of their high solubility level and superior
electrical properties compared with common para-substituted derivatives,
the utilization of meta substituents is a new strategy for the design
of soluble organic semiconductors in the field of OTFT device fabrication